Search results for " Barrier"
showing 10 items of 540 documents
Laser-Fabricated Fluorescent, Ligand-Free Silicon Nanoparticles: Scale-up, Biosafety, and 3D Live Imaging of Zebrafish under Development
2022
This work rationalizes the scalable synthesis of ultrasmall, ligand-free silicon nanomaterials via liquid-phase pulsed laser ablation process using picosecond pulses at ultraviolet wavelengths. Results showed that the irradiation time drives hydrodynamic NP size. Isolated, monodisperse Si-NPs are obtained at high yield (72%) using post-treatment process. The obtained Si-NPs have an average size of 10 nm (not aggregated) and display photoemission in the green spectral range. We directly characterized the ligand-free Si-NPs in a vertebrate animal (zebrafish) and assessed their toxicity during the development. In vivo assay revealed that Si-NPs are found inside in all the early life stages of …
Electron Binding in a Superatom with a Repulsive Coulomb Barrier: The Case of [Ag44(SC6H3F2)30]4– in the Gas Phase
2020
The electron binding mechanism in [Ag44(SC6H3F2)30]4- (SC6H3F2 = 3,4-difluorobenzenethiolate) tetra-anion was studied by photoelectron spectroscopy (PES), collision-induced dissociation mass spectrometry (CID-MS), and density functional theory (DFT) computations. PES showed that [Ag44(SC6H3F2)30]4- is energetically metastable with respect to electron autodetachment {[Ag44(SC6H3F2)30]3- + e-} and features a repulsive Coulomb barrier (RCB) with a height of 2.7 eV. However, CID-MS revealed that [Ag44(SC6H3F2)30]4- does not release an electron upon collisional excitation but undergoes dissociation. DFT computations performed on the known structure of [Ag44(SC6H3F2)30]4- confirmed the negative a…
Monitoring of Cell Layer Integrity with a Current-Driven Organic Electrochemical Transistor
2019
Abstract The integrity of CaCo-2 cell barriers is investigated by organic electrochemical transistors (OECTs) in a current-driven configuration. Ion transport through cellular barriers via the paracellular pathway is modulated by tight junctions between adjacent cells. Rupturing its integrity by H2O2 is monitored by the change of the output voltage in the transfer characteristics. It is demonstrated that by operating the OECT in a current-driven configuration, the sensitive and temporal resolution for monitoring the cell barrier integrity is strongly enhanced as compared to the OECT transient response measurement. As a result, current-driven OECTs are useful tools to assess dynamic and crit…
Ambipolar MoS2 Transistors by Nanoscale Tailoring of Schottky Barrier Using Oxygen Plasma Functionalization
2017
One of the main challenges to exploit molybdenum disulfide (MoS2) potentialities for the next-generation complementary metal oxide semiconductor (CMOS) technology is the realization of p-type or ambipolar field-effect transistors (FETs). Hole transport in MoS2 FETs is typically hampered by the high Schottky barrier height (SBH) for holes at source/drain contacts, due to the Fermi level pinning close to the conduction band. In this work, we show that the SBH of multilayer MoS2 surface can be tailored at nanoscale using soft O-2 plasma treatments. The morphological, chemical, and electrical modifications of MoS2 surface under different plasma conditions were investigated by several microscopi…
Amorphous semiconductor—electrolyte junction. Impedance study on the a-Nb2 O5—electrolyte junction
1990
Abstract A systematic study of the impedance behaviour of the anodic niobium oxide film/aqueous electrolyte interface was carried out using the lock-in technique at different signal frequencies. The dependence of both components of the impedance on the electrode potential and on frequency is analysed by taking into account the amorphous nature of the films. The lack of long-range order in these oxide layers modifies the physical picture in respect to the case of single crystal semiconductors. A new equivalent circuit has been assumed, based on recent theory of an amorphous semiconductor Schottky barrier. Such a new approach allows the characterization of the interface and the determination …
Integrated SINIS refrigerators for efficient cooling of cryogenic detectors
2002
In this paper we report recent results obtained with large area superconductor-insulator-normal metal-insulator-superconductor tunnel junction coolers. With the devices we have successfully demonstrated electronic cooling from 260 mK to 80 mK with a cooling power of 20 pW at 80 mK. At present, we are focusing on obtaining similar performance in cooling cryogenic detectors. Additionally, we present recent results of successful operation of a metalsemiconductor structure with a Schottky barrier acting as the tunnel barrier and the possibility to use this kind of structures for on-chip cooling.
Revisiting the electronic properties of Molecular Semiconductor – Doped Insulator (MSDI) heterojunctions through impedance and chemosensing studies
2015
Abstract The core activity of this work was to give a new interpretation of the electronic behavior of Molecular Semiconductor – Doped Insulator heterojunctions (MSDI), a new organic device combining two molecular materials with very different electronic properties. We focused on understanding the phenomenon occurring at the interface of fluorinated and non-fluorinated phthalocyanines that appears to be a determining factor for the electronic charge transport in the two-component thin film and ultimately deciding the nature of gas sensing, as illustrated with ozone and ammonia chosen as examples of accepting and donating gases. The impedance measurements showed that the Schottky contact bet…
Schottky barrier height tuning by Hybrid organic-inorganic multilayers
2014
ABSTRACTSemiconducting and insulating polymers and copolymers/Au nanograins based hybrid multilayers (HyMLs) were fabricated on p-Si single-crystal substrate by an iterative method that involves, respectively, Langmuir-Blodgett and spin-coating techniques (for the deposition of organic film) and sputtering technique (for the deposition of metal nanograins) to prepare Au/HyMLs/p-Si Schottky device. The electrical properties of the Au/HyMLs/p-Si Schottky device were investigated by current-voltage (I–V) measurements in the thickness range of 1-5 bilayers (BL).At different number of layers, current-voltage (I–V) measurements were performed. Results showed a rectifying behavior. Junction parame…
ZnS Ultrathin interfacial layers for optimizing carrier management in Sb2S3-based photovoltaics
2021
Antimony chalcogenides represent a family of materials of low toxicity and relative abundance, with a high potential for future sustainable solar energy conversion technology. However, solar cells based on antimony chalcogenides present open-circuit voltage losses that limit their efficiencies. These losses are attributed to several recombination mechanisms, with interfacial recombination being considered as one of the dominant processes. In this work, we exploit atomic layer deposition (ALD) to grow a series of ultrathin ZnS interfacial layers at the TiO2/Sb2S3 interface to mitigate interfacial recombination and to increase the carrier lifetime. ALD allows for very accurate control over th…
Impact of contact resistance on the electrical properties of MoS2 transistors at practical operating temperatures
2017
Molybdenum disulphide (MoS2) is currently regarded as a promising material for the next generation of electronic and optoelectronic devices. However, several issues need to be addressed to fully exploit its potential for field effect transistor (FET) applications. In this context, the contact resistance, RC, associated with the Schottky barrier between source/drain metals and MoS2 currently represents one of the main limiting factors for suitable device performance. Furthermore, to gain a deeper understanding of MoS2 FETs under practical operating conditions, it is necessary to investigate the temperature dependence of the main electrical parameters, such as the field effect mobility (μ) an…