Search results for " Be"
showing 10 items of 23740 documents
Nucleation of GaN nanowires grown by plasma-assisted molecular beam epitaxy: The effect of temperature
2011
Abstract The growth of GaN nanowires by means of plasma assisted molecular beam epitaxy directly on Si(1 1 1) has been investigated as a function of temperature. Statistical analysis of scanning electron microscopy pictures taken for different growth temperatures has revealed that density, diameter, length and length dispersion of nanowires were strongly dependent on temperature. Length dispersion, in particular, was found to be significant at high temperature. These features have been assigned to the different duration of the nucleation process with temperature, namely to the dependence with temperature of the time necessary for the size increase of the three-dimensional precursors up to a…
Reduced temperature sensitivity of multicrystalline silicon solar cells with low ingot resistivity
2016
This study presents experimental data on the reduction of temperature sensitivity of multicrystalline silicon solar cells made from low resistivity ingot. The temperature coefficients of solar cells produced from different ingot resistivities are compared, and the advantages of increasing the net doping are explained.
Kinetic instabilities in pulsed operation mode of a 14 GHz electron cyclotron resonance ion source
2016
The occurrence of kinetic plasma instabilities is studied in pulsed operation mode of a 14 GHz Aelectron cyclotron resonance type electron cyclotron resonance ion source. It is shown that the temporal delay between the plasma breakdown and the appearance of the instabilities is on the order of 10- 100 ms. The most important parameters affecting the delay are magnetic field strength and neutral gas pressure. It is demonstrated that kinetic instabilities limit the high charge state ion beam production in the unstable operating regime. peerReviewed
New progress of high current gasdynamic ion source (invited).
2016
The experimental and theoretical research carried out at the Institute of Applied Physics resulted in development of a new type of electron cyclotron resonance ion sources (ECRISs)—the gasdynamic ECRIS. The gasdynamic ECRIS features a confinement mechanism in a magnetic trap that is different from Geller’s ECRIS confinement, i.e., the quasi-gasdynamic one similar to that in fusion mirror traps. Experimental studies of gasdynamic ECRIS were performed at Simple Mirror Ion Source (SMIS) 37 facility. The plasma was created by 37.5 and 75 GHz gyrotron radiation with power up to 100 kW. High frequency microwaves allowed to create and sustain plasma with significant density (up to 8 × 1013 cm−3 ) …
Influence of surface topography on depth profiles obtained by Rutherford backscattering spectrometry
2000
A method for determining correct depth profiles from samples with rough surfaces is presented. The method combines Rutherford backscattering spectrometry with atomic force microscopy. The topographical information obtained by atomic force microscopy is used to calculate the effect of the surface roughness on the backscattering spectrum. As an example, annealed Au/ZnSe heterostructures are studied. Gold grains were observed on the surfaces of the annealed samples. The annealing also caused diffusion of gold into the ZnSe. Backscattering spectra of the samples were measured with a 2 MeV 4He+ ion beam. A scanning nuclear microprobe was used to verify the results by measuring backscattering fro…
Study of the Secondary Electron Yield in Dielectrics Using Equivalent Circuital Models
2018
[EN] Secondary electron emission has an important role on the triggering of the multipactor effect; therefore, its study and characterization are essential in radio-frequency waveguide applications. In this paper, we propose a theoretical model, based on equivalent circuit models, to properly understand charging and discharging processes that occur in dielectric samples under electron irradiation for secondary electron emission characterization. Experimental results obtained for Pt, Si, GaS, and Teflon samples are presented to verify the accuracy of the proposed model. Good agreement between theory and experiments has been found.
Analysis of thin high-k and silicide films by means of heavy ion time-of-flight forward-scattering spectrometry
2006
The use of forward scattered heavy incident ions in combination with a time-of-flight-energy telescope provides a powerful tool for the analysis of very thin (5–30 nm) films. This is because of greater stopping powers and better detector energy resolution for heavier ions than in conventional He-RBS. Because of the forward scattering angle, the sensitivity is greatly enhanced, thus reducing the ion beam induced desorption during the analysis of very thin films. The drawback of forward scattering angle is the limited mass separation for target elements. We demonstrate the performance of the technique with the analysis of 25 nm thick NiSi films and atomic layer deposited 6 nm thick HfxSiyOz f…
Radiation-induced defects in sapphire single crystals irradiated by a pulsed ion beam
2020
Abstract The luminescence and thermal stability of defects formed in α-Al2O3 single crystals after powerful (300 keV) pulsed irradiation with C+/H+ ion beam were investigated. It was found by measuring of optical density, photoluminescence, and pulsed cathodoluminescence that ion irradiation induces both single F-, F+-centers and F2-type aggregate centers. An intense thermoluminescence band with a complex shape was observed in the broad temperature range of 350–700 K, its intensity decreases with increasing of the energy density of the ion beam. The thermal stability of the F-type defects produced in α-Al2O3 after irradiation with a pulsed ion beam is comparable to that in neutron-irradiate…
Hot-cavity studies for the Resonance Ionization Laser Ion Source
2016
International audience; The Resonance Ionization Laser Ion Source (RILIS) has emerged as an important technique in many Radioactive Ion Beam (RIB) facilities for its reliability, and ability to ionize target elements efficiently and element selectively. GISELE is an off-line RILIS test bench to study the implementation of an on-line laser ion source at the GANIL separator facility. The aim of this project is to determine the best technical solution which combines high selectivity and ionization efficiency with small ion beam emittance and stable long term operation. The ion source geometry was tested in several configurations in order to find a solution with optimal ionization efficiency an…
Broadband microwave emission spectrum associated with kinetic instabilities in minimum-B ECR plasmas
2017
Plasmas of electron cyclotron resonance ion sources (ECRISs) are prone to kinetic instabilities due to the resonant heating mechanism resulting in anisotropic electron velocity distribution. Frequently observed periodic oscillations of extracted ion beam current in the case of high plasma heating power and/or strong magnetic field have been proven to be caused by cyclotrontype instabilities leading to a notable reduction and temporal variation of highly charged ion production. Thus, investigations of such instabilities and techniques for their suppression have become important topics in ECRIS research. The microwave emission caused by the instabilities contains information on the electron e…