Search results for " Chemistry"
showing 10 items of 41321 documents
Spark Plasma Sintering à partir de poudres mécaniquement activées : compréhension des transitions de phase au cours d'un frittage réactif
2007
International audience; À " basse température " (entre 400 et 600 ◦C), l'oxydation de MoSi2 entraîne sa désintégration en poudre (phénomène de " peste "). De récents travaux ont montré que l'utilisation de MoSi2 dense et nano-organisé permettrait de ralentir ce phénomène de " peste ". Le défi de produire des matériaux denses et nano-organisés peut être relevé par le frittage " flash " réactif sous champ électrique à partir des poudres mécaniquement activées (Mechanically-Activated Spark Plasma Sintering, MASPS). Le contrôle de la composition et de la microstructure du composé intermétallique MoSi2 nécessite de déterminer les paramètres du frittage SPS (température, rampe de montée en tempér…
Ab initio calculations of CaZrO3, BaZrO3, PbTiO3 and SrTiO3 (001), (011) and (111) surfaces as well as their (001) interfaces
2019
We carried out ab initio calculations for technologically important ABO3 perovskites, like, CaZrO3, BaZrO3, PbTiO3 and SrTiO3, their (001), (011) and (111) surfaces as well as (001) interfaces. For...
The α and γ plasma modes in plasma-enhanced atomic layer deposition with O2-N2 capacitive discharges
2017
Two distinguishable plasma modes in the O2–N2 radio frequency capacitively coupled plasma (CCP) used in remote plasma-enhanced atomic layer deposition (PEALD) were observed. Optical emission spectroscopy and spectra interpretation with rate coefficient analysis of the relevant processes were used to connect the detected modes to the α and γ modes of the CCP discharge. To investigate the effect of the plasma modes on the PEALD film growth, ZnO and TiO2 films were deposited using both modes and compared to the films deposited using direct plasma. The growth rate, thickness uniformity, elemental composition, and crystallinity of the films were found to correlate with the deposition mode. In re…
Explosive crystallization in amorphous CuTi thin films: a molecular dynamics study
2019
Abstract Molecular dynamic simulation was used to study mechanism of self-propagating waves of explosive crystallization (devitrification) in the CuTi metallic glass. Processes in thin rectangular samples composed of one to two million atoms were simulated and compared with experimental data. It was shown that the nucleation of primary crystalline clusters occurs homogeneously due to spontaneous fluctuations of atomic structure; the clusters not
A review on LiNixCo1−2xMnxO2 (0.1 ≤ x ≤ 0.33) cathode materials for rechargeable Li-ion batteries
2021
Abstract Electrochemical and physical properties of LiNixCo1−2xMnxO2 (0.1 ≤ x ≤ 0.33) electrode materials prepared by self-combustion were investigated. Pure LiNixCo1−2xMnxO2 (x = 0.1, 0.2, 0.33) materials with single phase and R-3 m layered structure were obtained as confirmed by X-ray diffraction. Energy Dispersive Spectroscopy, Scanning Electron Microscopy are commonly used to determine the chemical composition and the distribution of particle size of the three samples. The electrochemical performances of the samples were measured at different current rates in the 3–4.5 V potential range. The studied materials exhibit good discharge capacity. The magnetic susceptibility measurements and …
ABSOLUTE THERMOELECTRIC POWER OF Pb–Sn ALLOYS
2011
International audience; In this work, absolute thermoelectric power (ATP) of Pb, Sn, Pb-20 wt.% Sn, Pb-40 wt.% Sn, Pb-60 wt.% Sn, Pb-80 wt.% Sn are measured. Measurements are performed in a temperature gradient furnace from 20 degrees C to 500 degrees C, for both solid and liquid states. Temperatures are measured with T-type copper-constantan thermocouples, while voltage signal between copper electrodes of those thermocouples is recorded in order to calculate ATP of the sample metal.
The effects of thermal treatment on structural, morphological and optical properties of electrochemically deposited Bi2S3 thin films
2017
Abstract Thin films of bismuth sulfide (Bi 2 S 3 ) have been electrochemically deposited on indium–doped tin oxide substrates from aqueous solutions of Bi(NO 3 ) 3 , ethylene diamine tetraacetic acid (EDTA) and Na 2 S 2 O 3 . The structural properties of the films were characterized using X–ray diffraction and high–resolution transmission electron microscopy analyses. The film crystallizes in an orthorhombic structure of Bi 2 S 3 along with metallic bismuth. Thermal annealing of the prepared film in sulfur atmosphere improves its crystallinity and cohesion. The band gap values of the deposited film before and after annealing at 400 °C were found to be 1.28 and 1.33 eV, respectively.
Flash annealing influence on structural and electrical properties of TiO2/TiO/Ti periodic multilayers
2014
Abstract Multilayered structures with a 40 nm period composed of titanium and two different titanium oxides, TiO and TiO 2 , were accurately produced by DC magnetron sputtering using the reactive gas pulsing process. These multilayers were sputtered onto Al 2 O 3 sapphire to avoid substrate compound diffusion during flash annealing (ranging from 350 °C to 550 °C). Structure and composition of these periodic TiO 2 /TiO/Ti stacks were investigated by X-ray diffraction, X-ray photoemission spectroscopy and transmission electronic microscopy techniques. Two crystalline phases α-Ti and fcc-TiO were identified in the metallic-rich sub-layers whereas the oxygen-rich ones were composed of a mixture…
Structural, optical, and luminescence properties of ZnO:Ga optical scintillation ceramic
2018
This paper discusses the characteristics of ZnO and ZnO:Ga ceramics fabricated by uniaxial hot pressing. The short-wavelength transmission limit of zinc oxide ceramics is in the 370-nm region; the long-wavelength limit is determined by the free-charge-carrier concentration and lies in the interval from 5 to 9 μm. The total transmittance of such ceramics in the visible and near-IR regions is about 70% when the sample is 0.5 mm thick. The luminescence spectrum is represented by a broad emission band with maximum at 580 nm, having a defect nature. The introduction of 0.03–0.1 mass % gallium into the zinc oxide structure inhibits grain growth and increases the free-charge-carrier concentration …
Structural and morphological characterization of the Cd-rich region in Cd1-xZnxO thin films grown by atmospheric pressure metal organic chemical vapo…
2019
Abstract We have analysed the growth, morphological and structural characterization of Cd1-xZnxO thin films grown on r-sapphire substrates by atmospheric pressure metal organic chemical vapour deposition, mainly focusing on the Cd-rich rock-salt phase for its promising optical and technological applications. The evolution of the surface morphology and crystalline properties as a function of Zn content has been studied by means of high resolution x-ray diffraction and electron microscopy techniques. Monocrystalline (002) single-phase cubic films were obtained with Zn contents up to 10.4%, and with a low density of dislocations as a consequence of the optimized crystal growth process. Particu…