Search results for " DA"
showing 10 items of 14241 documents
Ptychographic imaging and micromagnetic modeling of thermal melting of nanoscale magnetic domains in antidot lattices
2020
CA extern Antidot lattices are potential candidates to act as bit patterned media for data storage as they are able to trap nanoscale magnetic domains between two adjacent holes. Here, we demonstrate the combination of micromagnetic modeling and x-ray microscopy. Detailed simulation of these systems can only be achieved by micromagnetic modeling that takes thermal effects into account. For this purpose, a Landau-Lifshitz-Bloch approach is used here. The calculated melting of magnetic domains within the antidot lattice is reproduced experimentally by x-ray microscopy. Furthermore, we compare conventional scanning transmission x-ray microscopy with resolution enhanced ptychography. Hence, we …
Melting temperature prediction by thermoelastic instability: An ab initio modelling, for periclase (MgO)
2021
Abstract Melting temperature (TM) is a crucial physical property of solids and plays an important role for the characterization of materials, allowing us to understand their behavior at non-ambient conditions. The present investigation aims i) to provide a physically sound basis to the estimation of TM through a “critical temperature” (TC), which signals the onset of thermodynamic instability due to a change of the isothermal bulk modulus from positive to negative at a given PC-VC-TC point, such that (∂P/∂V)VC,TC = -(∂2F/∂V2) VC,TC = 0; ii) to discuss the case of periclase (MgO), for which accurate melting temperature observations as a function of pressure are available. Using first princip…
Fluence effect on ion-implanted As diffusion in relaxed SiGe
2005
A systematic study on the fluence (5 × 108 − 4 × 1014 cm−2) dependence of ion-implanted As diffusion in relaxed Si1 − xGex alloys (with x = 0.2, 0.35 and 0.5) and silicon has been performed by the modified radiotracer and secondary ion mass spectrometry techniques. With fluences above 4 × 1011 cm−2 a clear fluence-dependent enhancement in arsenic diffusion was noted for Si1 − xGex. In case of arsenic-implanted silicon such fluence dependency was not observed. This can be assigned to enhanced implantation-induced damage formation and more deficient radiation damage recovery of SiGe.
Stabilization of primary mobile radiation defects in MgF2 crystals
2016
Abstract Non-radiative decay of the electronic excitations (excitons) into point defects ( F – H pairs of Frenkel defects) is main radiation damage mechanism in many ionic (halide) solids. Typical time scale of the relaxation of the electronic excitation into a primary, short-lived defect pair is about 1–50 ps with the quantum yield up to 0.2–0.8. However, only a small fraction of these primary defects are spatially separated and survive after transformation into stable, long-lived defects. The survival probability (or stable defect accumulation efficiency) can differ by orders of magnitude, dependent on the material type; e.g. ∼10% in alkali halides with f.c.c. or b.c.c. structure, 0.1% in…
Thermal annealing of radiation damage produced by swift 132Xe ions in MgO single crystals
2020
Abstract The annealing kinetics of the electron-type F+ and F color centers in highly pure MgO single crystals irradiated by 0.23-GeV 132Xe ions with fluences covering three orders of magnitude (Φ = 5 × 1011 –3.3 × 1014 ions/cm2) are studied experimentally via dependence of the optical absorption on preheating temperature. The annealing data are analyzed in terms of the diffusion-controlled bimolecular reactions between F-type centers and complementary interstitial oxygen ions. The behavior of the main kinetic parameters – the migration energies and pre-exponential factors – for different irradiation fluences is discussed and compared with that for other wide-gap binary materials from previ…
The peculiarities of the radiation damage accumulation kinetics in the case of defect complex formation
2020
Abstract The kinetics of radiation defect accumulation under irradiation by heavy particles is theoretically analysed under the assumption of defect complex genesis, particularly, the ones of anion and cation vacancies. The obtained analytical mathematical model and revealed peculiarities of radiation dose dependencies can be used for analysis of the experimental results for different crystalline materials for solid-state electronics and photonics.
An Analytic Approach to the Modeling of Multijunction Solar Cells
2020
Analytic expressions for the $JV$ -characteristics of three types of multijunction configurations are derived. From these, expressions for the short-circuit current, open-circuit voltage, and voltage at the maximum power point are found for multiterminal devices, and for series-connected tandem stacks. For voltage-matched devices, expressions for the optimal ratio of the number of bottom cells to the number of top cells are established. Luminescent coupling is incorporated throughout the article. It should be highlighted that the maximum power point of a series-connected tandem stack is described, with good accuracy for all interesting band gap combinations, by a single analytic expression.…
Parametric Models for Predicting the Performance of Wind Turbines
2020
Abstract Performances of eight parametric power curve models for wind turbines, which can be used for the planning and management of wind energy projects, are compared in this study. Initially, the manufacturer’s power curves of four wind turbines are compared with their field performances. Then, the parametric models are developed for these turbines which are tested with their site performances. Out of the models, WERA showed the best performance in case of all the turbines. Finally, a method for using WERA in extrapolating the performance of turbines with limited test data is demonstrated with the case of a 1 kW turbine.
Simulation of IQE tuning of individual cells for DC-balancing multijunction tandem cells
2016
In the present work, the performance of stacks of cells connected in series is examined at different levels of internal quantum efficiency (IQE). Incident photons, generated by employing the ASTM G173-03 data set, are accounted for individually as they interact with the stack of cells. The efficiencies of the devices studied are dependent upon the DC balance throughout the stack of cells. It is demonstrated that reducing the internal quantum efficiency of upper cells can lead to a better DC balance and thereby higher efficiency.
Smoothed Spherical Truncation based on Fuzzy Membership Functions: Application to the Molecular Encoding.
2019
A novel spherical truncation method, based on fuzzy membership functions, is introduced to truncate interatomic (or interaminoacid) relations according to smoothing values computed from fuzzy membership degrees. In this method, the molecules are circumscribed into a sphere, so that the geometric centers of the molecules are the centers of the spheres. The fuzzy membership degree of each atom (or aminoacid) is computed from its distance with respect to the geometric center of the molecule, by using a fuzzy membership function. So, the smoothing value to be applied in the truncation of a relation (or interaction) is computed by averaging the fuzzy membership degrees of the atoms (or aminoacid…