Search results for " Defects"
showing 10 items of 294 documents
Paradoxical embolism after a femoral fracture
1998
The foramen ovale is anatomically open in 25 % of individuals, but functionally closed by the higher pressure in the left antrum. Right-to-left shunt and subsequent paradoxical embolism may occur when pressure in the left antrum rises, for example, as a result of pulmonary embolism. In the present case we demonstrate a patient who presented 20 days after osteosynthetic treatment of a femoral fracture with word-finding deficits. Cerebral MRT revealed a fresh ischemic insult. Duplex ultrasound of the legs showed a fresh thrombosis of the superficial femoral vein and scintigraphy of the lungs detected pulmonary embolism. Transesophageal contrast echocardiography trapped a hemodynamically spont…
Defects at the TiO2(100) surface probed by resonant photoelectron diffraction.
2006
We report photoelectron diffraction (PED) experiments of weakly sub-stoichiometric TiO 2 (100) rutile surfaces. Apart from standard core-level PED from the Ti-2p3/2 line, we have studied valence band PED from the defect induced Ti-3d states in the insulating band gap. For maximum yield, the latter were resonantly excited at the Ti-2p absorption edge. The PED patterns have been analyzed within the forward scattering approximation as well as by comparison with simulated PED patterns obtained in multiple scattering calculations. The analysis shows that the defect induced Ti-3d charge is mainly located on the second layer Ti atoms. © 2007 Elsevier B.V. All rights reserved.
Linker depletion for missing cluster defects in non-UiO Metal-Organic Frameworks
2021
Defect engineering is a valuable tool to tune the properties of metal–organic frameworks. However, defect chemistry remains still predominantly limited to UiO-type MOFs. We describe the preferential formation of missing cluster defects in heterometallic titanium–organic frameworks of the MUV-10 family when synthesised in sub-stoichiometric linker conditions. Our results show the value of integrating experimental work, computational modelling and thorough characterization in rationalizing the impact of defects over the porosity and structure of this family of materials. Correlation of experiment with computational models reveals the dominance of missing cluster vacancies in the pore size dis…
Optimization of impurity profile for p-n junction in heterostructures
2005
We analyze the dopant diffusion in p-n-junction in heterostructure, by solving the diffusion equation with space-varying diffusion coefficient. For a step-wise spatial distribution we find the optimum annealing time to decrease the p-n-junction thickness and to increase the homogeneity of impurity concentration in p or n regions.
Kinetics of dimer F2 type center annealing in MgF2 crystals
2018
Authors are greatly indebted to V. Lisitsyn, A. Ch. Lushchik and R.Vila for stimulating discussions. This work has been carried out within the framework of the EUROfusion Consortium and has received funding from the European Union’s Horizon 2020 research and innovation programme under grant agreement number 633053. The views and opinions expressed herein do not necessarily reflect those of the European Commission. The calculations were performed using facilities of the Stuttgart Supercomputer Center (project DEFTD 12939).
The aristaless (Arx) gene: one gene for many "interneuronopathies".
2009
The ARX (Aristaless-related (X-linked) homeobox) gene is not only present in arthropods and their ancestors, but also in vertebrates including humans (ARX orthologs). The gene is composed of 5 coding exons and it is expressed predominantly in foetal and adult brain and skeletal muscle. In this review we report on our experience and review the existing literature on the genotype and phenotype heterogeneity associated with ARX abnormalities in humans ranging from severe neuronal migration defects (e.g., lissencephaly), to mild forms of X-linked mental retardation without apparent brain abnormalities. The ARX-related disorders are reviewed focusing on their clinical features and on the role of…
Solid-state diffusion phenomena in heterogeneous gas-solid reactions : Application to oxides sulfidation
2018
Phase transition phenomena involving the mobility of the reaction interface are involved in a wide variety of chemical reactions and applications. A good example is the sulfidation reaction experienced by the metal oxide-based materials used in the framework of gas purification or catalysts preparation applications. These reactions involve solid-state diffusion phenomena of the reactive species (atomic or ionic form) through the layer of product formed during the reaction (oxide, sulfide, or metal phase). In many cases, solid-state diffusion has a direct impact on the reaction mechanisms while determining the growth direction of the formed phases, as well as the overall kinetics of the reac…
Crystal Structure and Local Dynamics in Tetrahedral Proton-Conducting La1-xBa1+xGaO4
2010
La1-xBa1+xGaO4-0 (LBG) compounds, based on unconnected GaO4 moieties, were recently proposed as proton conductors. Protonic defects in the lattice are inserted through self-doping with Ba2+, to create oxygen vacancies subsequently filled by hydroxyl ions. We present a combined structural analysis on self-doped LBG using X-ray diffraction (XRD) and X-ray absorption (EXAFS): these results unravel the finer structural details on the short-range and long-range scales, and they are correlated with the dynamical properties of protonic conduction coming from vibrational spectroscopy. The structure of the GaO4 groups is independent of the oxide composition. On hydration, an array of short intertetr…
Photosensitivity of SiO2–Al and SiO2–Na glasses under ArF (193 nm) laser
2009
Abstract Photosensitivity of SiO 2 –Al and SiO 2 –Na glass samples was probed by means of the induced optical absorption and luminescence as well as by electron spin-resonance (ESR) after irradiation with excimer-laser photons (ArF, 193 nm). Permanent visible darkening in the case of SiO 2 –Al and transient, life time about one hour, visible darkening in the case of SiO 2 –Na was found under irradiation at 290 K. No darkening was observed at 80 K for either kind of material. This investigation is dedicated to revealing the electronic processes responsible for photosensitivity at 290 and 80 K. The photosensitivity of both materials is related to impurity defects excited directly in the case …
EPR on Radiation-Induced Defects in SiO2
2014
Continuous-wave electron paramagnetic resonance (EPR) spectroscopy has been the technique of choice for the studies of radiation-induced defects in silica (SiO2) for 60 years, and has recently been expanded to include more sophisticated techniques such as high-frequency EPR, pulse electron nuclear double resonance (ENDOR), and pulse electron spin echo envelope modulation (ESEEM) spectroscopy. Structural models of radiation-induced defects obtained from single-crystal EPR analyses of crystalline SiO2 (alfa-quartz) are often applicable to their respective analogues in amorphous silica (a-SiO2), although significant differences are common.