Search results for " Dielectric"
showing 10 items of 67 documents
The effect of hydration layers on the anodic growth and on the dielectric properties of Al2O3 for electrolytic capacitors
2014
Hydrous films were grown on high purity and cubicity Al foils for electrolytic capacitors in deionized water, ethylene glycol - deionized water and in glycerol - deionized water for different immersion times. According to the X-ray diffraction patterns the hydration treatment allowed to grow a pseudo boehmite layer on Al surface whose morphology is appreciably affected by the bath composition. Capacitance measurements and photoelectrochemical findings suggest that a more compact barrier layer forms during the immersion in alcohol containing solutions. The hydration in water allowed to save energy and to prepare more blocking oxide films. The beneficial effect of hydration in hot water on th…
Residual strain effects on the two-dimensional electron gas concentration of AlGaN/GaN heterostructures
2001
Ga-face AlGaN/GaN heterostructures with different sheet carrier concentrations have been studied by photoluminescence and Raman spectroscopy. Compared to bulk GaN, an energy shift of the excitonic emission lines towards higher energies was observed, indicating the presence of residual compressive strain in the GaN layer. This strain was confirmed by the shift of the E2 Raman line, from which biaxial compressive stresses ranging between 0.34 and 1.7 GPa were deduced. The spontaneous and piezoelectric polarizations for each layer of the heterostructures have been also calculated. The analysis of these quantities clarified the influence of the residual stress on the sheet electron concentratio…
Location of holes in silicon-rich oxide as memory states
2002
The induced changes of the flatband voltage by the location of holes in a silicon-rich oxide (SRO) film sandwiched between two thin SiO 2 layers [used as gate dielectric in a metal-oxide-semiconductor (MOS) capacitor] can be used as the two states of a memory cell. The principle of operation is based on holes permanently trapped in the SRO layer and reversibly moved up and down, close to the metal and the semiconductor, in order to obtain the two logic states of the memory. The concept has been verified by suitable experiments on MOS structures. The device exhibits an excellent endurance behavior and, due to the low mobility of the holes at low field in the SRO layer, a much longer refresh …
Tunable field effect properties in solid state and flexible graphene electronics on composite high – low k dielectric
2016
We demonstrate tunable field effect properties in solid state and flexible graphene field effect devices (FEDs) fabricated using a poly(methylmethacrylate) (PMMA) and lithium fluoride (LiF) composite dielectric. Increasing the concentration of LiF in the composite dielectric increases the capacitance, which thereby reduces the operating gate voltages of FEDs significantly from 10 V to 1 V to achieve similar conductivity. Electron and hole mobility of 350 and 310 cm2/V at VD = −5 V are obtained for graphene FEDs with 10% LiF concentration in the composite. Composite dielectric also enabled excellent FEDs on flexible substrates without any significant change in mobility and resistance. Flexib…
Above-bandgap ordinary optical properties of GaSe single crystal
2009
We report above-bandgap ordinary optical properties of ε-phase GaSe single crystal. Reference-quality pseudodielectric function 〈ε(E)〉 = 〈ε1(E)〉+i〈ε2(E)〉 and pseudorefractive index 〈N(E)〉 = 〈n(E)〉+i〈k(E)〉 spectra were measured by spectroscopic ellipsometry from 0.73 to 6.45 eV at room temperature for the light polarization perpendicular to the optic axis (math⊥math). The 〈ε〉 spectrum exhibited several interband-transition critical-point structures. Analysis of second-energy derivatives calculated numerically from the measured data yielded the critical-point energy values. Carmen.Martinez-Tomas@uv.es
A DRO-based X-band injection-locked amplifier without input non-reciprocal elements
2009
Conventional design of injection-locked amplifiers (ILA's) implies the use of a non-reciprocal (ferrite, usually) element for separating the input signal from the synchronized output signal. In this paper a novel topological structure is proposed which permitted the realization of a wide-band, transmission-type, ILA with no need for separating input-port isolator or preamplifier. The prototype, realized in HMIC technology, while intended only as demonstrator of the newly proposed approach in the design of ILA's, shows quite satisfactory performances at X-band, with a simple, compact and low-cost structure.
Energy and spatial distribution of traps in SiO2/Al 2O3 nMOSFETs
2006
The energy and spatial profiling of the interface and near-interface traps in n-channel MOSFETs with SiO2/Al2O3 gate dielectrics is investigated by charge-pumping (CP) measurements. By increasing the amplitude as well as lowering the frequency of the gate pulse, an increase of the charge recombined per cycle was observed, and it was explained by the contributions of additional traps located higher in energy and deeper in position at the SiO2/Al2O3 interface. In addition, CP currents, acquired after different constant voltage stress, have been used to investigate the trap generation in this dielectric stack. © 2006 IEEE.
Electrocaloric Effect in (1−x)(0.8Na0.5Bi0.5TiO3-0.2BaTiO3)−xCaTiO3 Solid Solutions at High Electric Fields
2022
This research was funded by the Latvian Science Council Fund, grant number lzp-2020/2-0080. The Institute of Solid State Physics, University of Latvia as the Center of Excellence has received funding from the European Union’s Horizon 2020 Framework Programme, grant number 739508.
A robust and efficient method for obtaining the complex modes in inhomogeneously filled waveguides
2003
In this paper, we present a computational simulation of the complex wave propagation in inhomogeneously filled waveguides with lossless and lossy dielectrics. We use a biorthonormal-basis method as a numerical technique. The behavior of complex modes in different waveguides whose characterization with other methods involves some difficulties is analyzed. © 2003 Wiley Periodicals, Inc. Microwave Opt Technol Lett 37: 218–222, 2003; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.10875
Feasible glass‐melting process assisted by microwaves
2019
[EN] The advantages of microwave (MW) energy processing have been verified in the sintering of a ceramic frit at a pre-industrial scale. The challenge of achieving high temperature using MW energy at such dimensions was overcome and a mix of natural raw materials was heated until its fluxing point. Changes in dielectric properties of the raw materials mix were also measured in situ with the increase in temperature, being in accordance to thermal processes of a conventional heating process. The properties of the resulting ceramic frit were compared with the same frit obtained by the conventional sintering method. Both frits showed similar thermal behavior regarding DTA-TGA, heating microscop…