Search results for " Field Effect Transistor"
showing 6 items of 16 documents
Nanostructural depth-profile and field-effect properties of poly(alkoxyphenylene-thienylene) Langmuir-Schäfer thin-films
2008
The correlations between morphological features and field-effect properties of poly(alkoxyphenylene-thiophene) thin Langmuir–Schafer film deposited on differently terminated gate dielectric surfaces, namely bare and methyl functionalized thermal silicon dioxide (t-SiO2), have been systematically studied. The film morphology has been investigated at different film thickness by Scanning Force Microscopy. Films thicker than a few layers show comparable morphology on both dielectric surfaces while differences are seen for the ultra-thin polymer deposit in close proximity to the substrate. Such deposit is notably more heterogeneous on bare t-SiO2, while a more compact and uniform nanogranular st…
Predictive dead time controller for GaN-based boost converters
2017
A dynamic dead time controller is presented, specifically intended to operate in synchronous boost converters based on GaN field-effect transistor switches. These transistors have a reduced stored charge with respect to silicon metal–oxide–semiconductor field-effect transistors with similar breakdown voltage and series resistance, and can operate at higher frequencies with reduced switching losses. On the other hand, the voltage drop in reverse conduction is typically more than doubled with respect to silicon devices resulting in relevant power losses during the free-wheeling phases. Therefore, dynamic control of dead time can be profitably applied even in converters operating in the tens o…
Electrochemical Fabrication of Inorganic/Organic Field Effect Transistor
2010
After discovery of conducting polymers and the possibility to modify their electrical properties (from insulating to metallic-like behaviour) by doping and a careful choice of the processing conditions, a large amount of research effort has been devoted to the theoretical understanding of their solid state properties as well as to exploit the possible application of conducting polymers in many technological fields including: large area organic electronics, polymer photovoltaic cell and sensors (1-2). Organic thin-film transistors appears very promising for the development of low cost, flexible and disposable plastic electronics. In order to reduce the operating voltage it has been suggested…
Layout influence on microwave performance of graphene field effect transistors
2018
The authors report on an in-depth statistical and parametrical investigation on the microwave performance of graphene FETs on sapphire substrate. The devices differ for the gate-drain/source distance and for the gate length, having kept instead the gate width constant. Microwave S -parameters have been measured for the different devices. Their results demonstrate that the cut-off frequency does not monotonically increase with the scaling of the device geometry and that it exists an optimal region in the gate-drain/source and gate-length space which maximises the microwave performance.
Glyphosate Sensor Based on Nanostructured Water-Gated CuO Field-Effect Transistor
2022
This research presents a comparative analysis of water-gated thin film transistors based on a copper oxide (CuO) semiconductor in the form of a smooth film and a nanostructured surface. A smooth CuO film was deposited through reactive magnetron sputtering followed by annealing in atmosphere at a temperature of 280 (Formula presented.) C. Copper oxide nanostructures were obtained by hydrothermal synthesis on a preliminary magnetron sputtered 2 nm thick CuO precursor followed by annealing at 280 (Formula presented.) C. An X-ray diffraction (XRD) analysis of the samples revealed the presence of a tenorite (CuO) phase with a predominant orientation of (002). Scanning electron microscopy (SEM) a…
Employing Microwave Graphene Field Effect Transistors for Infrared Radiation Detection
2018
In this work, we investigate the possibility of employing graphene field effect transistors, specifically designed for microwave applications, as infrared detectors for telecom applications. Our devices have been fabricated on a sapphire substrate employing CVD-grown transferred graphene. The roles of both the gate dielectric and the DC bias conditions have been evaluated in order to maximize the infrared generated signal through an experimental investigation of the signal-to-noise ratio dependence on the transistor operating point.