Search results for " GAP"
showing 10 items of 811 documents
Generation of white LED light by frequency downconversion using a perylene-based dye
2012
A high efficiency white light emitting diode (LED) was fabricated by generation of frequency down-conversion from a GaN/InGaN blue LED. In place of conventional inorganic phosphors, a perylene-based dye was used for colour conversion. The resulting hybrid structure is analysed by focusing on the visual performance of the realised LEDs employing the most relevant photometric parameters of a light source. Preparation of the organic polymer is described as well. The thermal stability of the dye was investigated and a simple structure which avoids colour degradation is proposed.
Sputtered cuprous oxide thin films and nitrogen doping by ion implantation
2016
Abstract The structural, optical and electrical properties of sputtered cuprous oxide thin films have been optimized through post-deposition thermal treatments. Moreover we have studied the effects of nitrogen doping introduced by ion implantation followed by the optimized oxidant thermal annealing. Three concentrations have been used, 0.6 N%, 1.2 N%, and 2.5 N%. Along with the preservation of the Cu 2 O phase, a slight optical band gap narrowing and a significant conductivity enhancement has been observed with respect to the undoped samples. These results can be justified by the absence of further oxygen vacancies promoted by dopant introduction and by the substitution of O atoms by N ones…
Pooling and expanding registries of familial hypercholesterolaemia to assess gaps in care and improve disease management and outcomes: Rationale and …
2016
WOS: 000393031600001
Bottom-up approach within the electroweak effective theory: Constraining heavy resonances
2020
The LHC has confirmed the existence of a mass gap between the known particles and possible new states. Effective field theory is then the appropriate tool to search for low-energy signals of physics beyond the Standard Model. We adopt the general formalism of the electroweak effective theory, with a non-linear realization of the electroweak symmetry breaking, where the Higgs is a singlet with independent couplings. At higher energies we consider a generic resonance Lagrangian which follows the above-mentioned non-linear realization and couples the light particles to bosonic heavy resonances with $J^P=0^\pm$ and $J^P=1^\pm$. Integrating out the resonances and assuming a proper short-distance…
Identification and functional expression of HCx31.9, a novel gap junction gene
2002
By combining in silico and bench molecular biology methods we have identified a novel human gap junction gene that encodes a protein designated HCx31.9. We have determined its human chromosomal location and gene structure, and we have identified a putative mouse ortholog, mCx30.2. We have observed the presence of HCx31.9 in human cerebral cortex, liver, heart, spleen, lung, and kidney and the presence of mCx30.2 in mouse cerebral cortex, liver and lung. Moreover, preliminary data on the electrophysiological properties of HCx31.9 have been obtained by functional expression in paired Xenopus oocytes and in transfected N2A cells.
Zero permeability and zero permittivity band gaps in 1D metamaterial photonic crystals
2007
We consider layered heterostructures combining ordinary positive index materials and dispersive metamaterials. We show that these structures can exhibit a new type of photonic gap around frequencies where either the magnetic permeability \mu or the electric permittivity \epsilon of the metamaterial is zero. Although the interface of a semi-infinite medium with zero refractive index (a condition attained either when \mu= 0 or when \epsilon= 0) is known to give full reflectivity for all incident polarizations, here we show that a gap corresponding to \mu = 0 occurs only for TE polarized waves, whereas a gap corresponding to \epsilon = 0 occurs only for TM polarized waves. These band gaps are …
Electronic structure and optical properties of CdTe rock-salt high pressure phase
2003
This paper reports on optical absorption and reflectance measurements in thin CdTe samples up to 15 GPa. All studied samples become virtually opaque at the pressure transition between the zinc-blende and rock-salt phases (3.9 GPa). As pressure increases up to 10 GPa, a relative transparency region is observed between 1.2 eV and 2.4 eV, whose high energy edge shifts to higher photon energies. Above 10 GPa the transparency region gradually shrinks and disappears at about 11 GPa. The low energy side of the absorption spectrum is attributed to free carrier absorption, as electronic structure calculations show that rock-salt CdTe is a semimetal or a low gap semiconductor. Band filling effects lo…
Pressure and temperature dependence of the band-gap in CdTe
2003
In this paper we report on isothermal compression measurements (up to 5 GPa and 500 K) of the optical absorption edge of 1 μm epitaxial layers of CdTe growth by metalorganic chemical vapor deposition (MOCVD) on GaS substrates. The isothermal blue shift under pressure of the direct energy gap (Γ v 15 → Γ c 1 ) in the zinc-blende phase is about 7.1 × 10 -2 eV GPa -1 and is found to be independent of temperature within the experimental errors. The isobaric red shift in the stability range of the zinc-blende phase is about -3.76 × 10 -4 eV K -1 . Regarding the phase transitions, no discontinuity in the energy gap has been found in the narrow pressure range where the cinnabar phase can be presen…
Tuning the band gap of PbCrO4 through high-pressure: Evidence of wide-to-narrow semiconductor transitions
2014
The electronic transport properties and optical properties of lead(II) chromate (PbCrO4) have been studied at high pressure by means of resistivity, Hall-effect, and optical-absorption measurements. Band-structure first-principle calculations have been also performed. We found that the low-pressure phase is a direct band-gap semiconductor (Eg = 2.3 eV) that shows a high resistivity. At 3.5 GPa, associated to a structural phase transition, a band-gap collapse takes place, becoming Eg = 1.8 eV. At the same pressure the resistivity suddenly decreases due to an increase of the carrier concentration. In the HP phase, PbCrO4 behaves as an n-type semiconductor, with a donor level probably associat…
Phase Behavior of TmVO4 under Hydrostatic Compression: An Experimental and Theoretical Study
2020
We present a structural and optical characterization of magnetoelastic zircon-type TmVO4 at ambient pressure and under high pressure. The properties under high pressure have been determined experimentally under hydrostatic conditions and theoretically using density functional theory. By powder X-ray diffraction we show that TmVO4 undergoes a first-order irreversible phase transition to a scheelite structure above 6 GPa. We have also determined (from powder and single-crystal X-ray diffraction) the bulk moduli of both phases and found that their compressibilities are anisotropic. The band gap of TmVO4 is found to be Eg = 3.7(2) eV. Under compression the band gap opens linearly, until it unde…