Search results for " Ga"
showing 10 items of 12404 documents
Selective Band Gap to Suppress the Spurious Acoustic Mode in Film Bulk Acoustic Resonator Structures
2018
In this work, we investigate numerically the propagation of Lamb waves in a film bulk acoustic resonator (FBAR) structure formed by piezoelectric ZnO layer sandwiched between two Mo electrodes coupled with Bragg reflectors; the system is thus considered as a phononic-crystal (PnC) plate. The aim is to suppress the first-order symmetric Lamb wave mode considered as a spurious mode caused by the establishment of a lateral standing wave due to the reflection at the embedded lateral extremities of the structure; this spurious mode is superposing to the main longitudinal mode resonance of the FBAR. The finite element study, using harmonic and eigen-frequency analyses, is performed on the section…
Multi-pulse characterization of trapping/detrapping mechanisms in AlGaN/GaN high electromobility transistors
2019
GaN high-electro mobility transistors (HEMTs) are among the most promising candidates for use in high-power, high-frequency, and high-temperature electronics owing to their high electrical breakdown threshold and their high saturation electron velocity. The applications of these AlGaN/GaN HEMTs in power converters are limited by the surface trapping effects of drain-current collapse. Charge-trapping mechanisms affect the dynamic performance of all GaN HEMTs used in power switching applications. This study analyzes the dynamic resistance of GaN HEMTs and finds that the effects of dynamic resistance can be suppressed by controlling switching conditions and on-off cycles.
Atomic Layer Deposition of LiF Thin Films from Lithd, Mg(thd)2, and TiF4 Precursors
2013
Lithium fluoride is an interesting material because of its low refractive index and large band gap. Previously LiF thin films have been deposited mostly by physical methods. In this study a new way of depositing thin films of LiF using atomic layer deposition (ALD) is presented. Mg(thd)2, TiF4 and Lithd were used as precursors, and they produced crystalline LiF at a temperature range of 300–350 °C. The films were studied by UV–vis spectrometry, field emission scanning electron microscopy (FESEM), X-ray diffraction (XRD), atomic force microscopy (AFM), time-of-flight elastic recoil detection analysis (ToF-ERDA), and energy dispersive X-ray spectroscopy (EDX). In addition, film adhesion was t…
Defect-related photoluminescence and photoluminescence excitation as a method to study the excitonic bandgap of AlN epitaxial layers: Experimental an…
2020
We report defect-related photoluminescence (PL) and its vacuum ultraviolet photoluminescence excitation (PLE) spectra of aluminum nitride layers with various layer thicknesses and dislocation densities grown on two different substrates: sapphire and silicon. The defect-related transitions have been distinguished and examined in the emission and excitation spectra investigated under synchrotron radiation. The broad PL bands of two defect levels in the AlN were detected at around 3 eV and 4 eV. In the PLE spectra of these bands, a sharp excitonic peak originating most probably from the A-exciton of AlN was clearly visible. Taking into account the exciton binding energy, the measurements allow…
ABALONETM Photosensors for the IceCube experiment
2020
Abstract The ABALONE TM Photosensor Technology (U.S. Pat. 9,064,678) is a modern technology specifically invented for cost-effective mass production, robustness, and high performance. We present the performance of advanced fused-silica ABALONE Photosensors, developed specifically for the potential extension of the IceCube neutrino experiment, and stress-tested for 120 days. The resulting performance makes a significant difference: intrinsic gain of ≈ 6 × 108, total afterpulsing rate of only 5 × 10−3 ions per photoelectron , sub-nanosecond timing resolution, single-photon sensitivity, and unique radio-purity and UV sensitivity, thanks to the fused silica components—at no additional cost to t…
Silicon dosimeters based on Floating Gate Sensor: design, implementation and characterization
2020
A rad-hard monolithic dosimeter has been implemented and characterized in a standard 180 nm CMOS technology. The radiation sensor (C-sensor) is based on a Floating Gate (FG) MOS discharge principle. The output current is processed by a current-to-voltage (I/V) interface and then converted by a 5-bit flash ADC. The dosimeter is re-usable (FG can be recharged) and can detect a dose up to 1krad (Si) with a resolution of 30rad (Si) typical over temperature 0 to 85°C range. The ADC allows easy further signal processing for calibration and averaging, etc. The power consumption of C-sensor plus I/V interface is < 2mW from a 5 V power supply. The overall layout area is less than 0.25mm2. The Rad…
Enhancement of the Spin Pumping Effect by Magnon Confluence Process in YIG/Pt Bilayers
2019
The experimental investigation of the spin pumping process by dipolar‐exchange magnons parametrically excited in in‐plane magnetized yttrium iron garnet/platinum bilayers is presented. The electric voltage generated in the platinum layer via the inverse spin Hall effect (ISHE) results from contributions of two opposite spin currents formed by the longitudinal spin Seebeck effect and by the spin pumping from parametric magnons. In the field‐dependent measurements of the spin pumping‐induced component of the ISHE‐voltage, a clearly visible sharp peak is detected at high pumping powers. It is found that the peak position is determined by the process of confluence of two parametrically excited …
Run-time scalable NoC for FPGA based virtualized IPs
2017
The integration of virtualized FPGA-based hardware accelerators in a cloud computing is progressing from time to time. As the FPGA has limited resources, the dynamic partial reconfiguration capability of the FPGA is considered to share resources among different virtualized IPs during runtime. On the other hand, the NoC is a promising solution for communication among virtualized FPGA-based IPs. However, not all the virtualized regions of the FPGA will be active all the time. When there is no demand for virtualized IPs, the virtualized regions are loaded with blank bitstreams to save power. However, keeping active the idle components of the NoC connecting with the idle virtualized regions is …
On the ‘expanded local mode’ approach applied to the methane molecule: isotopic substitution CH2D2←CH4
2011
On the basis of a compilation of the ‘expanded local mode’ model and the general isotopic substitution theory, sets of simple analytical relations between different spectroscopic parameters (harmonic frequencies, ωλ, anharmonic coefficients, x λμ, ro-vibrational coefficients, , different kinds of Fermi- and Coriolis-type interaction parameters) of the CH2D2 molecule are derived. All of them are expressed as simple functions of a few initial spectroscopic parameters of the mother, CH4, molecule. Test calculations with the derived isotopic relations show that, in spite of a total absence of initial information about the CH2D2 species, the numerical results of the calculations have a very good…
Structural, electronic and energetic effects in heterocyclic fluorene derivatives fused with a fulvene unit
2019
Abstract A set of 36 heterocyclic (B, N and O) fluorene (C) derivatives fused in nine ways with fulvene ring have been analyzed by means of different local aromaticity criteria. Molecular geometry of analyzed compounds were optimized at B3LYP/6-311++G(2d,2p) level of theory. The evaluation of the local aromaticity has been carried out through the use of the geometry-based harmonic oscillator model of aromaticity (HOMA) and the magnetism-based zz‐component of the nucleus independent chemical shifts calculated 1 A above the ring center (NICS1zz) indices as well as one aromaticity index derived from the Quantum Theory Atoms in Molecules (QTAIM), i.e. the para-delocalization index (PDI). Additi…