Search results for " NANO"

Emerging blue-UV luminescence in cerium doped YAG nanocrystals

2016

Physica status solidi / Rapid research letters 10(6), 475 - 479(2016). doi:10.1002/pssr.201600041

High-Performance Flexible Magnetic Tunnel Junctions for Smart Miniaturized Instruments

2018

Current Spreading Length and Injection Efficiency in ZnO/GaN-Based Light-Emitting Diodes

2019

We report on carrier injection features in light-emitting diodes (LEDs) based on nonintentionally doped-ZnO/p-GaN heterostructures. These LEDs consist of a ZnO layer grown by chemical-bath deposition (CBD) onto a p-GaN template without using any seed layer. The ZnO layer (~1- $\mu \text{m}$ thickness) consists of a dense collection of partially coalesced ZnO nanorods, organized in wurtzite phase with marked vertical orientation, whose density depends on the concentration of the solution during the CBD process. Due to the limited conductivity of the p-GaN layer, the recombination in the n-region is strongly dependent on the spreading length of the holes, ${L}_{h}$ , coming from the p-contact…

Guiding and splitting Lamb waves in coupled-resonator elastic waveguides

2018

Abstract We investigate experimentally Lamb wave propagation in coupled-resonator elastic waveguides (CREWs) formed by a chain of cavities in a two-dimensional phononic crystal slab with cross holes. Wide complete bandgaps, extending from 53 to 88 kHz, are first measured in a finite phononic crystal slab sample. A straight waveguide and a wave splitting circuit with 90° bends are then designed, fabricated and measured. Elastic Lamb waves are excited by a piezoelectric patch attached to one side of the phononic slab and detected using a scanning vibrometer. Strongly confined guiding and splitting at waveguide junctions are clearly observed for several guided waves. Numerical simulations are …

Experimental and numerical investigation of laboratory crystal growth furnace for the development of model-based control of CZ process

2019

Abstract The presented study is focused on laboratory Czochralski crystal growth experiments and their mathematical modelling. The developed small-scale CZ crystal growth furnace is described as well as the involved automation systems: crystal radius detection by image recognition, temperature sensors, adjustable heater power and crystal pull rate. The CZ-Trans program is used to model the experimental results – transient, 2D axisymmetric simulation software primarily used for modelling of the industrial-scale silicon crystal growth process. Poor agreement with the experimental results is reached; however, the proven ability to perform affordable, small-scale experiments and successfully mo…

Determination of refractive index of submicron-thick films using resonance shift in a four-layer slab waveguide

2017

The measurement of refractive index of very thin films at the order of ten to hundred nanometers is cumbersome and usually requires employing sophisticated techniques such as the spectral ellipsometry. In this paper we describe a simple contact method for measuring the refractive index of thin films. Here we have used the prism-coupling technique for characterizing samples prepared as four-layer slab waveguides. The waveguide resonance condition can be calculated by solving simple analytic transcendental equations for the slab waveguide. Then the captured mode position as a function of cladding thickness is used for probing the refractive index of cladding layer. We used indium-tin-oxide la…

Multi-pulse characterization of trapping/detrapping mechanisms in AlGaN/GaN high electromobility transistors

2019

GaN high-electro mobility transistors (HEMTs) are among the most promising candidates for use in high-power, high-frequency, and high-temperature electronics owing to their high electrical breakdown threshold and their high saturation electron velocity. The applications of these AlGaN/GaN HEMTs in power converters are limited by the surface trapping effects of drain-current collapse. Charge-trapping mechanisms affect the dynamic performance of all GaN HEMTs used in power switching applications. This study analyzes the dynamic resistance of GaN HEMTs and finds that the effects of dynamic resistance can be suppressed by controlling switching conditions and on-off cycles.

Crystalline phase detection in glass ceramics by EPR spectroscopy

2018

The advances of EPR spectroscopy for the detection of activators as well as determining their local structure in the crystalline phase of glass ceramics is considered. The feasibility of d-element (Mn2+, Cu2+) and f-element (Gd3+, Eu2+) ion probes for the investigation of glass ceramics is discussed. In the case of Mn2+, the information is obtained from the EPR spectrum superhyperfine structure, for Gd3+ and Eu2+ probes – from the EPR spectrum fine structure, whereas for Cu2+ ions the changes in the EPR spectrum shape could be useful. The examples of EPR spectra of the above-mentioned probes in oxyfluoride glass ceramics are illustrated. ----/ / /---- This is the preprint version of the fol…

Evaluation and Comparison of Novel Precursors for Atomic Layer Deposition of Nb2O5 Thin Films

2012

Atomic layer deposition (ALD) of Nb2O5 thin films was studied using three novel precursors, namely, tBuN═Nb(NEt2)3, tBuN═Nb(NMeEt)3, and tamylN═Nb(OtBu)3. These precursors are liquid at room temperature, present good volatility, and are reactive toward both water and ozone as the oxygen sources. The deposition temperature was varied from 150 to 375 °C. ALD-type saturative growth modes were confirmed at 275 °C for tBuN═Nb(NEt2)3 and tBuN═Nb(NMeEt)3 together with both oxygen sources. Constant growth rate was observed between a temperature regions of 150 and 325 °C. By contrast, amylN═Nb(OtBu)3 exhibited limited thermal stability and thus a saturative growth mode was not achieved. All films we…

Atomic Layer Deposition of Osmium

2011

Growth of osmium thin films and nanoparticles by atomic layer deposition is described. The Os thin films were successfully grown between 325 and 375 °C using osmocene and molecular oxygen as precursors. The films consisted of only Os metal as osmium oxides were not detected in X-ray diffraction measurements. Also the impurity contents of oxygen, carbon, and hydrogen were less than 1 at % each at all deposition temperatures. The long nucleation delay of the Os process facilitates either Os nanoparticle or thin film deposition. However, after the nucleation delay of about 350 cycles the film growth proceeded linearly with increasing number of deposition cycles. Also conformal growth of Os thi…