Search results for " Photovoltaic"
showing 10 items of 242 documents
Vapor phase epitaxy of Hg1−xCdxI2 on sapphire
1998
Abstract We demonstrate the possibility of growing Hg 1− x Cd x I 2 layers on sapphire substrates by vapor-phase epitaxy (VPE). The successful growth has been carried out using an α-HgI 2 polycrystalline source and a CdTe buffer layer grown on sapphire by metalorganic vapor phase epitaxy (MOVPE) before the Hg 1− x Cd x I 2 VPE growth. The Hg 1− x Cd x I 2 /sapphire 20–40 μm thick layers with a uniform composition in the range of x =0.2–0.6 were grown at 220–250°C for 70–300 h. The layers were studied by scanning electron microscopy, energy disperse X-ray analysis and X-ray diffractometry. Results on the layer characterization are reported and the effect of VPE conditions on the layer proper…
Influence of twinned structure on the morphology of CdTe(111) layers grown by MOCVD on GaAs(100) substrates
2003
Abstract The morphology and structure of CdTe(1 1 1) layers grown on GaAs(1 0 0) by MOCVD have been studied by atomic force microscopy (AFM) and X-ray texture analysis. Growth conditions have been chosen so that mirror-like CdTe layers are obtained. Layers whose growth times vary between 10 s and 2 h have been investigated. The X-ray texture analysis shows that the CdTe layers grown on GaAs substrates that were thermally treated at 580°C for 30 min in a H 2 atmosphere exhibit a (1 1 1) preferential orientation and are twinned. This twinned structure of the (1 1 1)CdTe layer which is observed as 60° rotated triangular crystallites in the AFM images strongly influences the surface morphology.…
Structural characterization of CdTe layers grown on (0001) sapphire by MOCVD
2004
Abstract We report on the growth of CdTe layers directly onto (0 0 0 1) sapphire substrates by MOCVD. The structure and morphology of the layers have been investigated as a function of growth temperature and II/VI precursor molar ratio by X-ray diffraction and scanning electron microscopy. The texture of the samples has revealed the existence of a temperature threshold, with higher growth temperatures resulting on completely (1 1 1) oriented layers. Some of these layers contained microtwins, as indicated by the extra peaks in the {4 2 2} Φ scans, leading to the existence of two different domains. The structural quality of each domain, as well as of the sample as a whole, has been determined…
Selective area vapor-phase epitaxy and structural properties of Hg1 − xCdxTe on sapphire
1997
Selective area (SA) Hg1 − xCdxTesapphire layers have been grown using the recently developed technique of the vapor-phase epitaxy (VPE) of Hg1 − xCdxTe layers on CdTesapphire heteroepitaxial substrates (HS), which we have called “VPE on HS technique” (Sochinskii et al., J. Crystal Growth 149 (1995) 35; 161 (1996) 195). First, planar CdTe (1 1 1) 5–7 μm thick layers were grown on sapphire (0 0 0 1) wafers by metalorganic vapor-phase epitaxy (MOVPE) at 340°C for 1–2.5 h using dimethylcadmium and di-isopropyltellurium as precursors. Second, CdTe/sapphire mesas were formed using standard photolithography in the form of alternating parallel linear arrays consisting of 500 × 70 μm2 elements. Thir…
Reconfigurable electrical interconnection strategies for photovoltaic arrays: A review
2014
Non-uniform irradiance significantly decreases the power delivered by solar photovoltaic arrays. A promising technique for compensating these power losses relies on dynamically reconfiguring the electrical connections between photovoltaic modules. This paper presents the current state-of-the-art strategies for photovoltaic array reconfiguration in order to increase the power output under partial shading and mismatch conditions. The different approaches have been compared in terms of effectiveness of the control algorithms, monitored electrical and environmental variables, overall hardware complexity and specific features of each solution. Finally, the most challenging aspects of the reconfi…
Anomální Ramanovy módy v teluridech
2021
[EN] Two anomalous broad bands are usually found in the Raman spectrum of bulk and 2D Te-based chalcogenides, which include binary compounds, like ZnTe, CdTe, HgTe, GaTe, GeTe, SnTe, PbTe, GeTe2, As2Te3, Sb2Te3, Bi2Te3, NiTe2, IrTe2, and TiTe2, as well as ternary compounds, like GaGeTe, SnSb2Te4, SnBi2Te4, and GeSb2Te5. Many different explanations have been proposed in the literature for the origin of the anomalous broad bands in tellurides, usually located between 119 and 145 cm(-1). They have been attributed to the intrinsic Raman modes of the sample, to oxidation of the sample, to the folding of Brillouin-edge modes onto the zone center, to the existence of a double resonance, like that …
Thiophene pyrenyl derivatives for the supramolecular processability of single-walled carbon nanotubes in thin film heterojunction
2017
Abstract A major problem for the use of single-wall carbon nanotubes (SWCNTs) in electronic devices relates to their poor processability. Chemical modification inevitably introduces defects in the nanotube lattice, resulting in a loss of electronic properties. In this contest, we report on a supramolecular approach with the aim of increasing the dispersion of SWCNTs in solution and in organic semiconductor matrices by ensuring the optoelectronic properties. In particular, new pyrenyl derivatives of thiophene have been synthesized and used to improve the solubility of SWCNTs for electron transfer in thin film heterojunction with poly(3-hexylthiophene) (P3HT) as donor system. Photoinduced ele…
Light absorption and electrical transport in Si:O alloys for photovoltaics
2010
Thin films (100-500 nm) of the Si:O alloy have been systematically characterized in the optical absorption and electrical transport behavior, by varying the Si content from 43 up to 100 at. %. Magnetron sputtering or plasma enhanced chemical vapor deposition have been used for the Si:O alloy deposition, followed by annealing up to 1250 °C. Boron implantation (30 keV, 3-30× 1014 B/cm2) on selected samples was performed to vary the electrical sheet resistance measured by the four-point collinear probe method. Transmittance and reflectance spectra have been extracted and combined to estimate the absorption spectra and the optical band gap, by means of the Tauc analysis. Raman spectroscopy was …
Characterization of the defect density states in MoOx for c-Si solar cell applications
2021
Thin layers of MoOx have been deposited by thermal evaporation followed by post-deposition annealing. The density of states distributions of the MoOx films were extracted deconvoluting the absorption spectra, measured by a photothermal deflection spectroscopy setup, including the small polaron contribution. Results revealed a sub-band defect distribution centered 1.1 eV below the conduction band; the amplitude of this distribution was found to increase with post-deposition annealing temperature and film thickness.
A Very Low Band Gap Diketopyrrolopyrrole-Porphyrin Conjugated Polymer
2017
International audience; A porphyrin-diketopyrrolopyrrole-containing polymer (poly(porphyrin-diketopyrrolopyrrole) (PPDPP)) shows impressive molar absorption coefficients from lambda=300 to 1000 nm. The photophysical and structural properties of PPDPP have been studied. With PPDPP as the electron donor and [ 6,6]phenyl C-71 butyric acid methyl ester (PC71BM) as the electron acceptor, the bulk heterojunction polymer solar cell showed overall power conversion efficiencies of 4.18 and 6.44% for as-cast and two-step annealing processed PPDPP: PC71BM (1: 2) active layers, respectively. These results are quite impressive for porphyrin-containing polymers, especially when directly included in the p…