Search results for " SEMICONDUCTORS"
showing 10 items of 96 documents
Growth, structural and optical properties of GaN/AlN and GaN/GaInN nanowire heterostructures
2012
Abstract After discussing the GaN NW nucleation issue, we will present the structural properties of axial and radial (i.e. core/shell) GaN/AlN NW heterostructures and adress the issue of critical thickness during the growth of such heterostructures. Next, we will present the growth of InGaN NWs on a GaN NW base. It will be shown that the morphology and structural properties of the InGaN NW sections depend on the In content: for high In content a flat top is observed and plastic relaxation is occuring, with mismatch dislocations formed at the InGaN/GaN interface. By contrast, for In content below 25% InGaN NWs exhibit a pencil-like shape assigned to a purely elastic strain relaxation process…
Electron-phonon heat transport and electronic thermal conductivity in heavily doped silicon-on-insulator film
2003
Electron–phonon interaction and electronic thermal conductivity have been investigated in heavily doped silicon at subKelvin temperatures. The heat flow between electron and phonon systems is found to be proportional to T6. Utilization of a superconductor–semiconductor–superconductor thermometer enables a precise measurement of electron and substrate temperatures. The electronic thermal conductivity is consistent with the Wiedemann–Franz law. Peer reviewed
Efficiency comparison between SiC- and Si-based active neutral-point clamped converters
2015
This paper presents an efficiency comparison between silicon-carbide technology and silicon technology. In order to achieve this, the efficiency of an active neutral-point clamped converter built up with silicon carbide power-devices is compared with the efficiency of an active neutral-point clamped converter built up with silicon power-devices, under a particular operating mode and a particular selection of devices. Firstly, overall losses of both converters are estimated. Then, experimental tests are carried out to measure their overall losses and efficiency. Finally, experimental results are compared with the estimations to support the analysis. The efficiency of the SiC converter is hig…
WS2 2D Semiconductor Down to Monolayers by Pulsed-Laser Deposition for Large-Scale Integration in Electronics and Spintronics Circuits
2020
International audience; We report on the achievement of a large-scale tungsten disulfide (WS2) 2D semiconducting platform derived by pulsed-laser deposition (PLD) on both insulating substrates (SrTiO3), as required for in-plane semiconductor circuit definition, and ferromagnetic spin sources (Ni), as required for spintronics applications. We show thickness and phase control, with highly homogeneous wafer-scale monolayers observed under certain conditions, as demonstrated by X-ray photoelectron spectroscopy and Raman spectroscopy mappings. Interestingly, growth appears to be dependent on the substrate selection, with a dramatically increased growth rate on Ni substrates. We show that this 2D…
Characterization and photoactivity of coupled ZnO-ZnWO4 catalysts prepared by a sol-gel method
2014
Abstract ZnO–ZnWO4 nanocomposites were synthesized by a novel sol–gel method and characterized through X-ray diffraction, BET specific surface area analysis, UV–Vis diffuse reflectance spectroscopy, scanning electron microscopy and transmission electron microscopy. The photocatalytic activity of the samples was evaluated using the degradation of 4-nitrophenol under UV light as probe reaction. The ZnO/ZnWO4 molar ratio was varied in order to study its influence on the photoefficiency of the mixed samples. The ZnO–ZnWO4 nanocomposites showed higher photoactivity than ZnO and ZnWO4. The high efficiency of the mixed samples was explained by the coupling and the intimate contact of two different…
InAlN underlayer for near ultraviolet InGaN based light emitting diodes
2019
We report on InAlN underlayer (UL) to improve the efficiency of near ultraviolet (NUV) light emitting diodes (LEDs). While InGaN UL is commonly used in high-efficiency blue LEDs it may absorb light for shorter wavelengths. InAlN lattice-matched to GaN exhibits a bandgap of 4.6 eV. This allows alleviating absorption issues in NUV LEDs. We demonstrate that the internal quantum efficiency of 405 nm single InGaN/GaN quantum well LEDs with InAlN UL is similar to 70% compared to less than 10% for LEDs without UL. Excellent I-V characteristics are achieved thanks to polarization charge screening with high doping level at the InAlN/GaN interface. (C) 2019 The Japan Society of Applied Physics
2D photonic defect layers in 3D inverted opals on Si platforms
2006
Dielectric spheres synthesised for the fabrication of self-organized photonic crystals such as opals offer large opportunities for the design of novel nanophotonic devices. In this paper, we show a hexagonal superlattice monolayer of dielectric spheres inscribed on a 3D colloidal photonic crystal by e-beam lithography. The crystal is produced by a variation of the vertical drawing deposition method assisted by an acoustic field. The structures were chosen after simulations showed that a hexagonal super-lattice monolayer in air exhibits an even photonic band gap below the light cone if the refractive index of the spheres is higher than 1.93.
Single quantum dot emission at telecom wavelengths from metamorphic InAs/InGaAs nanostructures grown on GaAs substrates
2011
3 figuras, 3 páginas.
Monte Carlo investigation of electron spin relaxation in GaAs crystals during low-field transport
2011
A great emerging interest within the condensed matter physics is the use of electron spin in semiconductor-based spintronic devices to perform both logic operations, communication and storage. In order to make spintronics a feasible technology, sufficiently long spin lifetimes and the possibility to manipulate, control and detect the spin polarization are required. The loss of spin polarization before, during and after the necessary operations is a crucial problem into spin device design; thus, a full understanding of the role played by the lattice temperature, the doping density and the amplitude of the applied electric field on the electron spin dynamics in semiconductors is essential for…
Monte Carlo study of diffusion noise reduction in GaAs operating under periodic conditions
2009
The effects of an external correlated source of noise on the intrinsic carrier noise in a low-doped GaAs bulk, operating under periodic conditions, are investigated. Numerical residts confirm that the dynamical response of electrons driven by a high-frequency periodic electric field receives a benefit by the constructive interplay between the fluctuating field and the intrinsic noise of the system. In particidar, in this contribute we show a nonmonotonic behavior of the integrated spectral density, which value critically depends on the correlation time of the external noise source.