Search results for " Semiconductor"

A DC and small signal AC model for organic thin film transistors including contact effects and non quasi static regime

2017

Abstract We present a compact model for the DC and small signal AC analysis of Organic Thin Film Transistors (OTFTs). The DC part of the model assumes that the electrical current injected in the OTFT is limited by the presence of a metal/organic semiconductor junction that, at source, acts as a reverse biased Schottky junction. By including this junction, modeled as a reverse biased gated diode at source, the DC model is able to reproduce the scaling of the electrical characteristics even for short channel devices. The small signal AC part of the model uses a transmission line approach in order to compute the impedances of the channel and parasitic regions of the device. The overlap capacit…

A cost-effective method for estimating di(2-ethylhexyl)phthalate in coastal sediments.

2013

This study describes the development of a new method for the analysis of di(2-ethylhexyl)phthalate (DEHP) using 0.1-0.3 g of sediment sample, based on matrix solid phase dispersion (MSPD) using C18 as dispersant phase (0.4 g) and acetonitrile-water as eluting solvent (3.4 mL 1:3.25, v/v). No evaporation step is required. 3 mL of extracts were processed on-line by in-tube solid phase microextraction (IT-SPME) coupled to capillary liquid chromatography (CapLC) and diode array detector (DAD). A short analytical column Zorbax SB C18 (35×0.5 mm, 5 μm) provided suitable results. FTIR-ATR was employed for characterizing sediment samples and MSPD procedure. The total analysis time was less than 20 …

<title>Holographic recording in amorphous semiconductor films</title>

1997

The present state of the real time holographic recording in amorphous semiconductor films is reviewed including mechanisms, parameters, properties and applications. Effects of the coherent, incoherent and relaxational self- enhancement as well as the influence of the film structure relaxation are considered. Quasi-permanent sub-band-gap light holographic recording is reported for the first time. 157

Site-specific atomic order and band structure tailoring in the diluted magnetic semiconductor (In,Ga,Mn)As

2021

Physical review / B 103(7), 075107 (1-13) (2021). doi:10.1103/PhysRevB.103.075107

Raman scattering and infrared reflectivity in [(InP)5(In0.49Ga0.51As)8]30 superlattices

2000

6 páginas, 6 figuras, 1 tabla.

Performance of a new real time digital pulse processing system for X-ray and gamma ray semiconductor detectors

2014

New generation spectroscopy systems have advanced towards digital pulse processing (DPP) approaches. DPP systems, based on direct digitizing and processing of detector signals, have recently been favoured over analog pulse processing electronics, ensuring better performance. In this work, we present the performance of a new real time DPP system for X-ray and gamma ray semiconductor detectors. The system is based on a commercial digitizer equipped with a custom DPP firmware, developed by our group, for on-line pulse shape and height analysis. X-ray and gamma ray spectra measurements with cadmium telluride (CdTe) and germanium (Ge) detectors, coupled to resistive feedback preamplifiers, will …

Fundamentals of photoelectrocatalysis

2022

Photoelectrocatalysis combines heterogeneous photocatalysis and electrocatalysis principles for numerous processes including the degradation of harmful compounds, the generation of H2 and O2 from water splitting, the reduction of CO2 or the photoelectrocatalytic synthesis of valuable organic molecules otherwise difficult to be synthetized with classical approaches. The recent progress of photoelectrocatalysis is heavily related to the development of materials, especially in 2D and nano materials. Highly ordered nanomaterials such as graphene, nanotubes, nanowires, etc. are gaining more attention due to their high surface area and excellent conductivity. Other challenges are the development …

SPEEDAM 2010 Poster REC0616: An electrochemical route towards the fabrication of nanostructured semiconductor solar cells

2010

Residual strain effects on the two-dimensional electron gas concentration of AlGaN/GaN heterostructures

2001

Ga-face AlGaN/GaN heterostructures with different sheet carrier concentrations have been studied by photoluminescence and Raman spectroscopy. Compared to bulk GaN, an energy shift of the excitonic emission lines towards higher energies was observed, indicating the presence of residual compressive strain in the GaN layer. This strain was confirmed by the shift of the E2 Raman line, from which biaxial compressive stresses ranging between 0.34 and 1.7 GPa were deduced. The spontaneous and piezoelectric polarizations for each layer of the heterostructures have been also calculated. The analysis of these quantities clarified the influence of the residual stress on the sheet electron concentratio…

Measurement of drift mobilities in amorphous organic films using the Time of Flight method

2004

We apply the Time of Flight (TOF) technique to study carrier mobility in N, N’-diphenyl-N,N’-bis(3-methylphenyl) -1,1-biphenyl-4,4’-diamine (TPD) and tris(8-hydroxyquinolato) aluminium (Alq 3 ). These materials are two examples of, respectively, hole and electron transporting molecular materials. Measurements are performed in free air or under vacuum varying the experimental parameters such as laser pulse intensity and single shot irradiation. We observe a transition from dispersive to non dispersive transport changing the experimental conditions.