Search results for " Silicon"
showing 10 items of 247 documents
Internal alignment and position resolution of the silicon tracker of DAMPE determined with orbit data
2017
Abstract The DArk Matter Particle Explorer (DAMPE) is a space-borne particle detector designed to probe electrons and gamma-rays in the few GeV to 10 TeV energy range, as well as cosmic-ray proton and nuclei components between 10 GeV and 100 TeV. The silicon–tungsten tracker–converter is a crucial component of DAMPE. It allows the direction of incoming photons converting into electron–positron pairs to be estimated, and the trajectory and charge (Z) of cosmic-ray particles to be identified. It consists of 768 silicon micro-strip sensors assembled in 6 double layers with a total active area of 6.6 m 2 . Silicon planes are interleaved with three layers of tungsten plates, resulting in about o…
In-flight performance of the DAMPE silicon tracker
2018
Abstract DAMPE (DArk Matter Particle Explorer) is a spaceborne high-energy cosmic ray and gamma-ray detector , successfully launched in December 2015. It is designed to probe astroparticle physics in the broad energy range from few GeV to 100 TeV. The scientific goals of DAMPE include the identification of possible signatures of Dark Matter annihilation or decay, the study of the origin and propagation mechanisms of cosmic-ray particles, and gamma-ray astronomy . DAMPE consists of four sub-detectors: a plastic scintillator strip detector, a Silicon–Tungsten tracKer–converter (STK), a BGO calorimeter and a neutron detector . The STK is composed of six double layers of single-sided silicon mi…
The Belle II vertex detector integration
2019
Belle II DEPFET, PXD, and SVD Collaborations: et al.
Operational experience with a large detector system using silicon strip detectors with double sided readout
1992
Abstract A large system of silicon strip detectors with double sided readout has been successfully commissioned over the course of the last year at the e + e − collider LEP. The readout of this 73 728 channel system is performed with custom designed VLSI charge sensitive amplifier chips (CAMEX64A). An overall point resolution of 12 μm on both sides has been acheived for the complete system. The most important difficulties during the run were beam losses into the detector, and a chemical agent deposited onto the electronics; however, the damage from these sources was understood and brought under control. This and other results of the 1991 data-taking run are described with special emphasis o…
Radiation-hard semiconductor detectors for SuperLHC
2005
An option of increasing the luminosity of the Large Hadron Collider (LHC) at CERN to 10^35 cm^(- 2) s(- 1) has been envisaged to extend the physics reach of the machine. An efficient tracking down to a few centimetres from the interaction point will be required to exploit the physics potential of the upgraded LHC. As a consequence, the semiconductor detectors close to the interaction region will receive severe doses of fast hadron irradiation and the inner tracker detectors will need to survive fast hadron fluences of up to above 1016 cm 2. The CERN-RD50 project ''Development of Radiation Hard Semiconductor Devices for Very High Luminosity Colliders'' has been established in 2002 to explore…
High-precision mass measurements of 25Al and 30P at JYFLTRAP
2016
The masses of the astrophysically relevant nuclei 25Al and 30P have been measured with a Penning trap for the first time. The mass-excess values for 25Al ( $\Delta = -8915.962(63)$ keV) and 30P ( $\Delta = -20200.854(64)$ keV) obtained with the JYFLTRAP double Penning trap mass spectrometer are in good agreement with the Atomic Mass Evaluation 2012 values but $ \approx$ 5-10 times more precise. A high precision is required for calculating resonant proton-capture rates of astrophysically important reactions 25Al (p, $ \gamma$ )26Si and 30P(p, $ \gamma$ )31S . In this work, $ Q_{(p,\gamma)} = 5513.99(13)$ keV and $ Q_{(p,\gamma)} = 6130.64(24)$ keV were obtained for 25Al and 30P , respectivel…
A Recoil-Beta Tagging Study of N = Z nucleus [sup 66]As
2011
A Recoil‐Beta Tagging (RBT) experiment was recently performed at the accelerator laboratory at the University of Jyvaskyla in order to identify T = 1 excited states in the medium‐heavy N = Z = 33 nucleus 66As. The fusion‐evaporation reaction 28Si(40Ca,pn)66As was employed at a beam energy of 75 MeV. The experiment was carried out utilising the JUROGAM II γ‐ray spectrometer in conjunction with the gas‐filled recoil separator RITU and the GREAT focal plane spectrometer system. The half‐lives and ordering of the two known isomeric states in 66As have been determined. In addition, several new prompt γ‐ray transitions from excited states both bypassing and decaying to the isomeric states in 66As…
Porous silicon photoluminescence biosensor for rapid and sensitive detection of toxins
2017
A rapid and low cost photoluminescence (PL) immunosensor for the determination of low concentrations of Ochratoxin A(OTA) and Aflatoxine B1 (AfB1) has been developed. This biosensor was based on porous silicon (PSi) fabricated by metal-assisted chemical etching (MACE) and modified by antibodies against OTA/AfB1 (anti-OTA/anti-AfB1). Biofunctionalization method of the PSi surface by anti-OTA/ anti-AfB1 was developed. The changes of the PL intensity after interaction of the immobilized anti-OTA/anti-AfB1with OTA/AfB1 antigens were used as biosensor signal, allowing sensitive and selective detection of OTA/AfB1 antigens in BSA solution. The sensitivity of the reported optical biosensor towards…
Light absorption and conversion in solar cell based on Si:O alloy
2013
Thin film Si:O alloys have been grown by plasma enhanced chemical vapor deposition, as intrinsic or highly doped (1 to 5 at. % of B or P dopant) layers. UV-visible/near-infrared spectroscopy revealed a great dependence of the absorption coefficient and of the optical gap (Eg) on the dopant type and concentration, as Eg decreases from 2.1 to 1.9 eV, for the intrinsic or highly p-doped sample, respectively. Thermal annealing up to 400 °C induces a huge H out-diffusion which causes a dramatic absorption increase and a reduction of Eg, down to less than 1.8 eV. A prototypal solar cell has been fabricated using a 400 nm thick, p-i-n structure made of Si:O alloy embedded within flat transparent c…
Si photomultipliers for bio-sensing applications
2016
In this paper, silicon photomultipliers (SiPM) are proposed as optical detectors for bio sensing. Optical transduction is the most used detection mechanism in many biosensor applications, such as DNA microarray and real-time polymerase chain reaction. The performances of a 25 pixels device used for both applications are studied. The results confirm that the SiPM is more sensitive than the traditionally employed detectors. In fact, it is able to experimentally detect 1 nM and 100 fM of fluorophore concentrations in dried samples and solutions, respectively. We present and discuss in details the detector configuration and its characterization as fluorescence detector for bio sensing.