Search results for " Silicon"
showing 10 items of 247 documents
Numerical study of silicon crystal ridge growth
2014
Abstract The size of the ridge-like protrusions appearing on the external surface of dislocation-free 〈 100 〉 silicon crystals grown from a melt was studied theoretically. According to existing models the growth of the ridges is caused by the presence of { 111 } crystal planes at the crystal–melt interface. They affect the height of triple phase line, free surface orientation and the crystal growth angle. A numerical 2-dimensional model was proposed for the calculation of the size of the crystal ridges. The model included the effect of the undercooling of the crystal–melt interface on the crystal growth angle. The numerical model estimated the effect of the ridge size on the free surface at…
Cathodoluminescence and photoluminescence study of trap centers in amorphous silicon oxynitride
2002
Amorphous silicon oxynitride (a-SiO/sub x/N/sub y/) films with different compositions were prepared using low-pressure chemical vapor deposition (LPCVD) technique, The cathodoluminescence and photoluminescence of this samples were measured from the red band to the ultraviolet band to study the trap centers in silicon oxynitride. A 1.8-1.9 eV band was found and is attributed to the oxygen and nitrogen atoms with unpaired electrons whereas the 2.7 eV band is attributed to two-fold coordinated silicon atoms with two electrons. The 5.4 eV shoulder is due to the peroxy radicals and other ultraviolet bands are supposed to due due to the Si-Si bonds.
Anomalous and normal Hall effect in hydrogenated amorphous Si prepared by plasma enhanced chemical vapor deposition
2010
The double sign anomaly of the Hall coefficient has been studied in p -doped and n -doped hydrogenated amorphous silicon grown by plasma enhanced chemical vapor deposition and annealed up to 500 °C. Dark conductivity as a function of temperature has been measured, pointing out a conduction mechanism mostly through the extended states. Anomalous Hall effect has been observed only in the as-deposited n -doped film, disappearing after annealing at 500 °C, while p -doped samples exhibit normal Hall effect. When Hall anomaly is present, a larger optical band gap and a greater Raman peak associated with Si-H bond are measured in comparison with the cases of normal Hall effect. The Hall anomaly wi…
Comparative study of initial stages of copper immersion deposition on bulk and porous silicon
2013
Initial stages of Cu immersion deposition in the presence of hydrofluoric acid on bulk and porous silicon were studied. Cu was found to deposit both on bulk and porous silicon as a layer of nanoparticles which grew according to the Volmer-Weber mechanism. It was revealed that at the initial stages of immersion deposition, Cu nanoparticles consisted of crystals with a maximum size of 10 nm and inherited the orientation of the original silicon substrate. Deposited Cu nanoparticles were found to be partially oxidized to Cu2O while CuO was not detected for all samples. In contrast to porous silicon, the crystal orientation of the original silicon substrate significantly affected the sizes, dens…
Accelerated Light-Induced Defect Transformation Study of Elkem Solar Grade Silicon
2012
AbstractSolar cells made of silicon feedstock from a metallurgical route must qualify not only the initial efficiency, but must also be comparable to the solar cells made from reference polysilicon on the spectral response after light induced degradation. A detailed comparative study of light induced defects and its impact on cell performance is necessary for both materials. We have studied accelerated light induced degradation (ALID) defect transformation for Elkem Solar Silicon and polysilicon solar cells by selecting wafers from different positions from respective silicon bricks. Active boron-oxygen complexes and iron ions in multicrystalline silicon solar cells have been analyzed, and t…
Annealing study of oxygenated and non-oxygenated float zone silicon irradiated with protons
2003
Abstract Introducing oxygen into the silicon material is believed to improve the radiation hardness of silicon detectors. In this study, oxygenated and non-oxygenated silicon samples were processed and irradiated with 15 MeV protons. In order to speed up the defect reactions after the exposure to particle radiation, the samples were heat treated at elevated temperatures. In this way, the long-term stability of silicon detectors in hostile radiation environment could be estimated. Current–voltage measurements and Surface Photovoltage (SPV) method were used to characterize the samples.
Birefringent porous silicon membranes for optical sensing
2012
In this work anisotropic porous silicon is investigated as a material for optical sensing. Birefringence and sensitivity of the anisotropic porous silicon membranes are thoroughly studied in the framework of Bruggeman model which is extended to incorporate the influence of environment effects, such as silicon oxidation. The membranes were also characterized optically demonstrating sensitivity as high as 1245 nm/RIU at 1500 nm. This experimental value only agrees with the theory when it takes into consideration the effect of silicon oxidation. Furthermore we demonstrate that oxidized porous silicon membranes have optical parameters with long term stability. Finally, we developed a new model …
Phase-Sensitive Detection for Optical Sensing With Porous Silicon
2012
We report on a photonic sensor with an ultralow limit of detection (LoD) based on a phase interrogation readout scheme together with an anisotropic porous silicon (PSi) membrane. First, the fabrication of porous free-standing membranes from medium doped (100) surface oriented silicon, with pore diameters suitable for the infiltration of biomolecules, around 50 nm, is reported. Then, the phase interrogation scheme for characterizing the PSi membranes is presented whose results show that while volumetric sensitivity increases with the membrane thickness, the resolution in the birefringence measurements decrease dramatically due to depolarization effects. The best LoD was found to be equal to …
Electro-optical characterization of new classes of Silicon Carbide UV photodetectors
2014
In this paper, we present the fabrication process steps and the characterization of 4H-SiC vertical Schottky UV detectors, where interdigitated strips, acting as top metal contacts, have been realized in $\hbox{Ni}_{2}\hbox{Si}$ . These devices exploit the pinch-off surface effect. $I$ – $V$ and $C$ – $V$ characteristics, as functions of temperature, were measured in dark conditions. In addition, we have carried out responsivity measurements, for wavelengths ranging from 200 to 400 nm, at varying package temperature and applied reverse bias. A comparison among devices having different strip pitch sizes has been performed, thus finding out that the 10- $\mu\hbox{m}$ pitch class demonstrates …
Surface Morphology of Single and Multi-Layer Silicon Nitride Dielectric Nano-Coatings on Silicon Dioxide and Polycrystalline Silicon
2019
Silicon nitride (Si3N4) in a form of single and multi-layer nanofilms is proposed to be used as a dielectric layer in nanocapacitors for operation in harsh environmental conditions. Characterization of surface morphology, roughness and chemical bonds of the Si3N4 coatings has an important role in production process as the surface morphology affects the contact surface with other components of the produced device. Si3N4 was synthesized by using low pressure chemical vapour deposition method and depositing single and multi-layer (3 – 5 layers) nanofilms on SiO2 and polycrystalline silicon (PolySi). The total thickness of the synthesized nanofilms was 20 – 60 nm. Surface morphology was investi…