Search results for " TEMPERATURE"

showing 10 items of 2370 documents

Temperature dependence of luminescence of LiF crystals doped with different metal oxides

2020

Photoluminescence and cathodoluminescence of LiF crystals doped with different binary metal oxides were measured in the wide temperature range of 50-300 K and time interval of 10−8−10−1 s after the nanosecond electron excitation pulse. Both as-grown those and crystals irradiated by an electron beam in range of absorbed dose up to 103 Gy were studied. It is shown that spectral-kinetic characteristics of the luminescence depend on the absorbed dose (type of created/accumulated color centers), the irradiation temperature, the concentration of hydroxyl, which promotes incorporation of the MeO complex (Me: W, Ti, Fe, Li) into the crystal lattice, and the cation-dopants.

010302 applied physicsMaterials sciencePhotoluminescencePhysics and Astronomy (miscellaneous)DopingAnalytical chemistryGeneral Physics and AstronomyCathodoluminescenceNanosecondAtmospheric temperature range01 natural sciencesElectron excitation0103 physical sciencesElectron beam processing010306 general physicsLuminescenceLow Temperature Physics
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Antiferromagnetic NiO thickness dependent sign of the spin Hall magnetoresistance in γ-Fe 2 O 3 /NiO/Pt epitaxial stacks

2019

We study the spin Hall magnetoresistance (SMR) in epitaxial γ–Fe2O3/NiO(001)/Pt stacks, as a function of temperature and thickness of the antiferromagnetic insulating NiO layer. Upon increasing the thickness of NiO from 0 nm to 10 nm, we detect a sign change of the SMR in the temperature range between 10 K and 280 K. This temperature dependence of the SMR in our stacks is different compared to that of previously studied yttrium iron garnet/NiO/Pt, as we do not find any peak or sign change as a function of temperature. We explain our data by a combination of spin current reflection from both the NiO/Pt and γ-Fe2O3/NiO interfaces and the thickness-dependent exchange coupling mode between the …

010302 applied physicsMaterials sciencePhysics and Astronomy (miscellaneous)MagnetoresistanceCondensed matter physicsNon-blocking I/OYttrium iron garnet02 engineering and technologyAtmospheric temperature range021001 nanoscience & nanotechnologyEpitaxy01 natural scienceschemistry.chemical_compoundReflection (mathematics)chemistry0103 physical sciencesAntiferromagnetism0210 nano-technologySpin (physics)Applied Physics Letters
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Gel combustion synthesis and magnetic properties of CoFe2O4, ZnFe2O4, and MgFe2O4 using 6-aminohexanoic acid as a new fuel

2020

Abstract For the first time, 6-aminohexanoic acid is used as an alternative fuel in the synthesis of the spinel ferrites with compositions CoFe2O4, ZnFe2O4 and MgFe2O4 using gel combustion synthesis with different oxidizer-to-fuel (O/F) ratios. The gel precursors were studied by differential thermal analysis and thermogravimetry (DTA/TG), which showed that the ignition temperature depends on the gel precursor, being around 230 °C, 130 °C and 275 °C for CoFe2O4, ZnFe2O4, and MgFe2O4, respectively. These results showed than the 6-aminohexanoic acid has an ignition temperature lower than the urea and the citric acid when were used in the synthesis of the spinel ferrites by gel combustion. More…

010302 applied physicsMaterials scienceSpinelAnalytical chemistryAutoignition temperature02 engineering and technologyengineering.material021001 nanoscience & nanotechnologyCondensed Matter PhysicsCombustion01 natural sciencesElectronic Optical and Magnetic MaterialsAdiabatic flame temperatureThermogravimetryZinc ferriteDifferential thermal analysis0103 physical sciencesengineeringFourier transform infrared spectroscopy0210 nano-technologyJournal of Magnetism and Magnetic Materials
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Raman characterization of Pb2Na1−xLaxNb5−xFexO15 and Pb0.5(5−x)LaxNb5−xFexO15 (0≤x≤1) solid solutions

2011

Abstract The ferroelectric compounds Pb 2 Na 1− x La x Nb 5− x Fe x O 15 and Pb 0.5(5− x ) La x Nb 5− x Fe x O 15 (0≤ x ≤1) with the tungsten bronze type structure have been investigated using Raman spectroscopy. The evolution of the spectra as a function of composition at room temperature is reported. In the frequency range 200–1000 cm −1 three main A 1 phonons around 240 ( υ 1 ), 630 ( υ 2 ) and 816 ( υ 3 ) cm −1 were observed. The broadening of the Raman lines for high values of x originates from a significant structural disorder. This is in good agreement with the relaxor character of these compositions. The lowest-frequency part of the spectra, below 180 cm −1 , reveals a structural ch…

010302 applied physicsMaterials science[ PHYS.COND.CM-MS ] Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Analytical chemistrychemistry.chemical_element02 engineering and technologyAtmospheric temperature rangeTungsten021001 nanoscience & nanotechnologyCondensed Matter Physics01 natural sciencesFerroelectricitySpectral lineElectronic Optical and Magnetic Materialssymbols.namesakechemistry0103 physical sciences[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]symbolsElectrical and Electronic Engineering0210 nano-technologySpectroscopyRaman spectroscopyRaman scatteringSolid solutionPhysica B: Condensed Matter
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Spectroscopic study of ion temperature in minimum-B ECRIS plasma

2019

Experimentally determined ion temperatures of different charge states and elements in minimum-B confined electron cyclotron resonance ion source (ECRIS) plasma are reported. It is demonstrated with optical emission spectroscopy, complemented by the energy spread measurements of the extracted ion beams, that the ion temperature in the JYFL 14 GHz ECRIS is 5–28 eV depending on the plasma species and charge state. The reported ion temperatures are an order of magnitude higher than previously deduced from indirect diagnostics and used in simulations, but agree with those reported for a quadrupole mirror fusion experiment. The diagnostics setup and data interpretation are discussed in detail to …

010302 applied physicsMaterials scienceionitPlasma spectroscopyspektroskopiaAnalytical chemistryIon temperaturePlasmaCondensed Matter Physics7. Clean energy01 natural sciences010305 fluids & plasmasPhysics::Plasma Physicsion temperature0103 physical scienceslämpötilaspectroscopic studyOptical emission spectroscopyDoppler broadeningPlasma Sources Science and Technology
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Atomic Layer Deposition of LiF Thin Films from Lithd, Mg(thd)2, and TiF4 Precursors

2013

Lithium fluoride is an interesting material because of its low refractive index and large band gap. Previously LiF thin films have been deposited mostly by physical methods. In this study a new way of depositing thin films of LiF using atomic layer deposition (ALD) is presented. Mg(thd)2, TiF4 and Lithd were used as precursors, and they produced crystalline LiF at a temperature range of 300–350 °C. The films were studied by UV–vis spectrometry, field emission scanning electron microscopy (FESEM), X-ray diffraction (XRD), atomic force microscopy (AFM), time-of-flight elastic recoil detection analysis (ToF-ERDA), and energy dispersive X-ray spectroscopy (EDX). In addition, film adhesion was t…

010302 applied physicsMaterials scienceta214ta114Band gapGeneral Chemical EngineeringAnalytical chemistryLithium fluoride02 engineering and technologyGeneral ChemistryAtmospheric temperature range021001 nanoscience & nanotechnology01 natural sciencesElastic recoil detectionchemistry.chemical_compoundAtomic layer depositionchemistryImpurity0103 physical sciencesMaterials ChemistryThin film0210 nano-technologySpectroscopyChemistry of Materials
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Hydrodynamic Modeling of Transport and Noise Phenomena in Bipolar Two-Terminal Silicon Structures

1998

International audience

010302 applied physicsNoise temperatureMaterials scienceSiliconMechanical EngineeringShot noisechemistry.chemical_element02 engineering and technology021001 nanoscience & nanotechnologyCondensed Matter Physics01 natural sciences[SPI.TRON]Engineering Sciences [physics]/Electronics[PHYS.PHYS.PHYS-COMP-PH]Physics [physics]/Physics [physics]/Computational Physics [physics.comp-ph]NoisechemistryTerminal (electronics)Mechanics of Materials0103 physical sciencesElectronic engineeringGeneral Materials Science[PHYS.COND]Physics [physics]/Condensed Matter [cond-mat]0210 nano-technologyComputingMilieux_MISCELLANEOUSMaterials Science Forum
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Annealing behaviour of aluminium-implanted InP

2000

The annealing behaviour of aluminium has been studied in single-crystal InP implanted with 40 and 120 keV 27Al+ ions. The implantation doses were 1 x 1015 and 1 x 1016 cm-2. The aluminium concentration profiles were determined by two techniques, Secondary ion mass spectrometry (SIMS) and the nuclear resonance broadening technique (NRB) which was used for checking purposes. The usability of the SIMS technique for profiling Al rich layers was studied. Significant inconsistencies were observed in the SIMS profiles with the high dose implanted samples. The 120 keV, 1 x 1016 cm-2 implanted samples were subject to annealing in argon atmosphere in the temperature range 380–600°C. Redistribution an…

010302 applied physicsNuclear and High Energy PhysicsMaterials scienceAnnealing (metallurgy)Analytical chemistrychemistry.chemical_element02 engineering and technologyActivation energyAtmospheric temperature range021001 nanoscience & nanotechnology01 natural sciencesSpectral lineIonSecondary ion mass spectrometryIon implantationchemistryAluminium0103 physical sciences0210 nano-technologyInstrumentationNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
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EPR and optical spectroscopy of neutron-irradiated Gd3Ga5O12 single crystals

2020

Abstract In this paper, we have performed comparative analysis of EPR, optical absorption (OA) and luminescence spectra for a series of Gd3Ga5O12 (GGG) single crystals irradiated with fast neutrons with fluencies varied from 1016 to 1020n/cm2. In a crystal irradiated with the maximum neutron fluence, the EPR spectra demonstrated the formation of several paramagnetic defects. In particular, EPR spectrum shows a strong resonance at (effective) g ≈ 1.4 with practically isotropic behavior in the crystal rotation around the [1 1 1] direction (magnetic field being perpendicular to [1 1 1]) and several weaker lines in the g ≈ 1.1–2.6 region, which show more pronounced angular dependences. While th…

010302 applied physicsNuclear and High Energy PhysicsMaterials sciencePhotoluminescenceResonance02 engineering and technology021001 nanoscience & nanotechnology01 natural sciencesMolecular physicsNeutron temperaturelaw.inventionCrystalParamagnetismlaw0103 physical sciences0210 nano-technologySpectroscopyLuminescenceElectron paramagnetic resonanceInstrumentationNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
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Comparison of the F-type center thermal annealing in heavy-ion and neutron irradiated Al2O3 single crystals

2018

Abstract The optical absorption and thermally stimulated luminescence of Al2O3 (sapphire) single crystals irradiated with swift heavy ions (SHI) 238U with energy 2.4 GeV is studied with the focus on the thermal annealing of the F-type centers in a wide temperature range of 400–1500 K. Its theoretical analysis allows us to obtain activation energies and pre-exponentials of the interstitial oxygen ion migration, which recombine with both types of immobile electron centers (F and F+ centers). A comparison of these kinetics parameters with literature data for a neutron-irradiated sapphire shows their similarity and thus supports the use of SHI-irradiation for modeling the neutron irradiation.

010302 applied physicsNuclear and High Energy PhysicsMaterials sciencePhysics::Instrumentation and DetectorsAnalytical chemistry02 engineering and technologyElectronAtmospheric temperature range021001 nanoscience & nanotechnology01 natural sciencesIonCondensed Matter::Materials Science0103 physical sciencesSapphireNeutronIrradiation0210 nano-technologyAbsorption (electromagnetic radiation)LuminescenceInstrumentationNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
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