Search results for " UPS"
showing 10 items of 102 documents
A Methodology for the Analysis of Memory Response to Radiation through Bitmap Superposition and Slicing
2015
A methodology is proposed for the statistical analysis of memory radiation test data, with the aim of identifying trends in the single-even upset (SEU) distribution. The treated case study is a 65nm SRAM irradiated with neutrons, protons and heavy-ions.
"Table 1" of "Search for promptly produced heavy quarkonium states in hadronic Z decays"
1996
The analysis of hadrons (from X) provides to distinguish of the various decay modes of Z-boson (see text).
"Table 5" of "Inclusive $\Upsilon$ production in p-Pb collisions at $\sqrt{s_{\rm NN}}$ = 8.16 TeV"
2020
$\Upsilon$(1S) differential cross section as a function of $p_{\rm T}$, at backward rapidity at $\sqrt{s_{\rm NN}}$ = 8.16 TeV .The first uncertainty is statistical, while the second is the systematic.
"Table 4" of "Inclusive $\Upsilon$ production in p-Pb collisions at $\sqrt{s_{\rm NN}}$ = 8.16 TeV"
2020
$\Upsilon$(1S) differential cross section as a function of $p_{\rm T}$, at forward rapidity at $\sqrt{s_{\rm NN}}$ = 8.16 TeV .The first uncertainty is statistical, while the second is the systematic.
"Table 3" of "Inclusive Lambda/c production in e+ e- annihilations at s**(1/2) = 10.54-GeV and in Upsilon(4S) decays."
2008
LAMBDA/C+ differential production rate per UPSILON(4S) decay at cm energy 10.58 GeV.
"Table 4" of "Inclusive Lambda/c production in e+ e- annihilations at s**(1/2) = 10.54-GeV and in Upsilon(4S) decays."
2008
The integrated number of LAMBDA/C+'s per UPSILON(4S) event at cm energy 10.58 GeV.
"Table 2" of "Inclusive $\Upsilon$ production in p-Pb collisions at $\sqrt{s_{\rm NN}}$ = 8.16 TeV"
2020
$\Upsilon$(2S) differential cross section times as a function of $y_{\rm cms}$, in p--Pb collisions at $\sqrt{s_{\rm NN}}$ = 8.16 TeV. The first uncertainty is statistical, while the second is the systematic.
Memory irradiation measurements for the European SMART-1 spacecraft
2005
Three different types of memory circuits, that are intended to be used on board of the European satellite SMART-1, have been radiation hardness tested according to ESA's specification. Since the satellite is equipped with an electric propulsion engine, the spacecraft will be exposed to radiation during a long time when passing the radiation belt of the Earth. A standard DRAM circuit from SAMSUNG will serve as building block of the mass memory of SMART-1, and has been tested for total dose and proton induced single event upset (SEU). The DRAM memory showed surprisingly good resistance against radiation. The proton SEU cross sections for the radiation tolerant SRAM and FIFO circuits have also…
The identifiability analysis for setting up measuring campaigns in integrated water quality modelling.
2012
Abstract Identifiability analysis enables the quantification of the number of model parameters that can be assessed by calibration with respect to a data set. Such a methodology is based on the appraisal of sensitivity coefficients of the model parameters by means of Monte Carlo runs. By employing the Fisher Information Matrix, the methodology enables one to gain insights with respect to the number of model parameters that can be reliably assessed. The paper presents a study where identifiability analysis is used as a tool for setting up measuring campaigns for integrated water quality modelling. Particularly, by means of the identifiability analysis, the information about the location and …
Heavy ion SEE test of 2 Gbit DDR3 SDRAM
2011
New generation 2 Gbit DDR3 SDRAMs from Micron, Samsung and Nanya have been tested under heavy ions. SEFIs significantly outweigh random SEU errors even at low LET; however, SEFIs can be mitigated by frequent re-initialization.