6533b834fe1ef96bd129d8ba

RESEARCH PRODUCT

A Methodology for the Analysis of Memory Response to Radiation through Bitmap Superposition and Slicing

Ari VirtanenLuigi DililloMikko RossiRudy FerraroViyas GuptaArto JavanainenC. FrostFrédéric SaignéHelmut PuchnerAlexandre Louis BosserFrédéric WrobelGeorgios TsiligiannisAli Zadeh

subject

Computer sciencebitmap slicingParallel computingHardware_PERFORMANCEANDRELIABILITYRadiationSlicingUpsetElectronic mailSuperposition principleStatic random-access memoryMemoriesstatic testNuclear Experimentdynamic testta114ta213computer.file_formatSRAMBitmap[SPI.TRON]Engineering Sciences [physics]/ElectronicsMultiple Cell Upset (MCU)MCUSERBitmapradiation testevent accumulationSingle Event Upset (SEU)AlgorithmcomputerSEUTest data

description

A methodology is proposed for the statistical analysis of memory radiation test data, with the aim of identifying trends in the single-even upset (SEU) distribution. The treated case study is a 65nm SRAM irradiated with neutrons, protons and heavy-ions.

10.1109/radecs.2015.7365578https://hal-lirmm.ccsd.cnrs.fr/lirmm-01238397