Search results for "Upset"
showing 10 items of 30 documents
TITAFORM - Precision Hot Forming, development of innovative hot-forming processes of aeronautical components in Ti-alloy with low buy/fly ratio: an I…
2012
In the paper the description of the project TITAFORM is provided. The project has been financed on the call "PON Linea 1" of the Italian government and represents an effective example of cooperation between academy and industry. The project is focused on the beta forging and hot stretch forming operations of titanium alloys. �� 2012 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.
The TileCal Optical Multiplexer Board 9U
2011
Abstract TileCal is the hadronic calorimeter of the ATLAS experiment at LHC/CERN. The system contains roughly 10,000 channels of read-out electronics, whose signals are gathered and digitized in the front-end electronics and then transmitted to the counting room through two redundant optical links. Then, the data is received in the back-end system by the Optical Multiplexer Board (OMB) 9U which performs a CRC check to the redundant data to avoid Single Event Upsets errors. A real-time decision is taken on the event-to-event basis to transmit single data to the Read-Out Drivers (RODs) for processing. Due to the low dose level expected during the first years of operations in ATLAS it was deci…
A Methodology for the Analysis of Memory Response to Radiation through Bitmap Superposition and Slicing
2015
A methodology is proposed for the statistical analysis of memory radiation test data, with the aim of identifying trends in the single-even upset (SEU) distribution. The treated case study is a 65nm SRAM irradiated with neutrons, protons and heavy-ions.
Memory irradiation measurements for the European SMART-1 spacecraft
2005
Three different types of memory circuits, that are intended to be used on board of the European satellite SMART-1, have been radiation hardness tested according to ESA's specification. Since the satellite is equipped with an electric propulsion engine, the spacecraft will be exposed to radiation during a long time when passing the radiation belt of the Earth. A standard DRAM circuit from SAMSUNG will serve as building block of the mass memory of SMART-1, and has been tested for total dose and proton induced single event upset (SEU). The DRAM memory showed surprisingly good resistance against radiation. The proton SEU cross sections for the radiation tolerant SRAM and FIFO circuits have also…
Heavy ion SEE test of 2 Gbit DDR3 SDRAM
2011
New generation 2 Gbit DDR3 SDRAMs from Micron, Samsung and Nanya have been tested under heavy ions. SEFIs significantly outweigh random SEU errors even at low LET; however, SEFIs can be mitigated by frequent re-initialization.
Enhancing formability of aluminium alloys by superimposing hydrostatic pressure
2003
Publisher Summary One of the strategic topics in manufacturing engineering is represented by the reduction of components weight. This aim is pursued by utilizing accurate and effective design tools and using lightweight metals such as aluminum, magnesium, and titanium alloys. Unfortunately, such materials often show a poor ductility, and thus enhancing formability is nowadays one of the most relevant research focus, as well as the development of effective and reliable predictive models of defects insurgence during forming processes. In this scenario, forming by means of superimposed hydrostatic pressure represents a promising alternative manufacturing technique. The chapter discusses the si…
Comparison of TID response and SEE characterization of single- and multi-level high density NAND flash memories
2009
Heavy ion single-event measurements and total ionizing dose (TID) response for 8Gb commercial NAND flash memories are reported. Radiation results of multilevel flash technology are compared with results from single-level flash technology. The single-level devices are less sensitive to single event upsets (SEUs) than multi-level devices. In general, these commercial high density memories exhibit less TID degradation compared to older generations of flash memories. The charge pump in this study survived up to 600 krads.
Heavy-Ion Radiation Impact on a 4 Mb FRAM Under Different Test Modes and Conditions
2016
International audience; The impact of heavy-ions on commercial Ferroelectric Memories (FRAMs) is analyzed. The influence of dynamic and static test modes as well as several stimuli on the error rate of this memory is investigated. Static test results show that the memory is prone to temporary effects occurring in the peripheral circuitry, with a possible effect due to fluence. Dynamic tests results show a high sensitivity of this memory to switching activity of this peripheral circuitry.
Heavy-Ion Radiation Impact on a 4Mb FRAM under Different Test Conditions
2015
The impact of heavy-ions on commercial Ferroelectric Memories (FRAMs) is analyzed. The influence of different test modes (static and dynamic) on this memory is investigated. Static test results show that the memory is prone to temporary effects occurring in the peripheral circuitry. Dynamic tests results show a high sensitivity of this memory to heavy-ions.
Effects of high-energy electrons in advanced NAND flash memories
2016
We study the effects of high-energy electrons on advanced NAND Flash memories with multi-level and single-level cell architecture. We analyze the error rate in floating gate cells as a function of electron energy, evaluate the impact of total ionizing dose, and discuss the physical origin of the observed behavior.