Search results for "Upset"

showing 10 items of 30 documents

Proton Direct Ionization in Sub-Micron Technologies: Numerical Method for RPP Parameter Extraction

2022

This work introduces a numerical method to iteratively extract parameters of a rectangular parallelepiped (RPP) sensitive volume (SV) from experimental proton direct ionization SEU data. The method combines two separate numerical models. The first model estimates the average LET values for energetic ions, including protons and also heavy ions, in elemental solid targets. The second model describes the statistical variance in the energy deposition events of projectile-induced primary ionization within a RPP shaped target volume. To benchmark the method, simulated cross-section values based on RPP parameters derived with this method are compared with literature data from four SRAM devices. Th…

Nuclear and High Energy Physicssingle event upset (SEU)protonitnumeeriset menetelmätionisoiva säteilyMonte Carlo (MC) methodstragglingMonte Carlo -menetelmätNuclear Energy and Engineeringsäteilyfysiikkarectangular parallelepiped (RPP)proton direct ionization (PDI)Electrical and Electronic Engineeringlinear energy transfer (LET)IEEE Transactions on Nuclear Science
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The Pion Single-Event Effect Resonance and its Impact in an Accelerator Environment

2020

International audience; The pion resonance in the nuclear reaction cross section is seen to have a direct impact on the single-event effect (SEE) cross section of modern electronic devices. This was experimentally observed for single-event upsets and single-event latchup. Rectangular parallelepiped (RPP) models built to fit proton data confirm the existence of the pion SEE cross-section resonance. The impact on current radiation hardness assurance (RHA) soft error rate (SER) predictions is, however, minimal for the accelerator environment since this is dominated by high neutron fluxes. The resonance is not seen to have a major impact on the high-energy hadron equivalence approximation estab…

Nuclear reactionProtonNuclear Theoryresonance: effectSingle event upsets01 natural sciences7. Clean energyResonance (particle physics)nuclear reactionelektroniikkakomponentitradiation hardness assurance (RHA)Detectors and Experimental TechniquesNuclear Experimentradiation: damagePhysicsLarge Hadron Colliderprotonscross sectionMesonsneutronitRandom access memorySEELarge Hadron Colliderpionsn: fluxNuclear and High Energy PhysicsprotonitMesonaccelerator[PHYS.PHYS.PHYS-ACC-PH]Physics [physics]/Physics [physics]/Accelerator Physics [physics.acc-ph]RHAsoft error ratesoft error rate (SER)hiukkaskiihdyttimetNuclear physicsFLUKACross section (physics)hiukkasetPion0103 physical sciencesNeutron[PHYS.PHYS.PHYS-INS-DET]Physics [physics]/Physics [physics]/Instrumentation and Detectors [physics.ins-det]Electrical and Electronic Engineeringpi: interactionsingle-event effect (SEE)Neutrons010308 nuclear & particles physicsneutronsAccelerators and Storage RingsParticle beamsNuclear Energy and EngineeringsäteilyfysiikkahadronIEEE Transactions on Nuclear Science
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Mono-energetic electron induced single-event effects at the VESPER facility

2016

We present experimental evidence of electron induced upsets in a reference ESA SEU monitor, the SEU based particle detector, induced by 200 MeV electron beam at the VESPER facility at CERN. Comparison of experimental cross sections and simulated cross sections are shown and the differences are analyzed. Possible secondary contributions to the upset rate by neutrons and cumulative dose effects are discussed, showing that electronuclear reactions are the expected SEU mechanism. Insight is given as to possible overall electron contribution to the upset rates in the Jovian radiation environment inside a typical spacecraft shielding are evaluated.

PhysicsLarge Hadron Collider010308 nuclear & particles physicsElectronRadiation01 natural sciencesUpsetParticle detectorNuclear physics0103 physical sciencesElectromagnetic shieldingCathode rayNeutron010306 general physics2016 16th European Conference on Radiation and Its Effects on Components and Systems (RADECS)
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Effect of Ion Energy on Charge Loss From Floating Gate Memories

2008

Heavy ions typical of the space environment have energies which exceed by orders of magnitude those available at particle accelerators. In this paper we are irradiating state of the art floating gate memories by using both a medium energy (SIRAD) and a high energy (RADEF) facilities. The corruption of stored information decreases when increasing ion energy. The proposed model deals with the broader track found for higher energy ions. Implications for testing procedures and for reliability considerations are discussed.

PhysicsNuclear and High Energy PhysicsOrders of magnitude (temperature)business.industryCyclotronElectrical engineeringParticle acceleratorlaw.inventionIonComputational physicsNon-volatile memoryNuclear Energy and EngineeringlawSingle event upsetElectrical and Electronic EngineeringbusinessEnergy (signal processing)Space environmentIEEE Transactions on Nuclear Science
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Effects of Scaling in SEE and TID Response of High Density NAND Flash Memories

2010

Heavy ion single-event effect (SEE) measurements and total ionizing dose (TID) response for Micron Technology single-level cell 1, 2, 4, 8 Gb commercial NAND flash memory and multi-level cell 8, 16, 32 Gb are reported. The heavy ion measurements were extended down to LET 0.1 MeV-cm2/mg. Scaling effects in SEE and TID response are discussed. Floating gate bit error upset cross section does not scale with feature size at high LETs, except for single-level cell 8 Gb device which is built with 51 nm processes. The threshold LET does not change with scaling. Charge pump TID degradation and standby current improves with scaling. In general, the effect of radiation is either unchanged or is less s…

PhysicsNuclear and High Energy Physicsbusiness.industryNAND gateUpsetNon-volatile memoryFlash (photography)Nuclear Energy and EngineeringSingle event upsetAbsorbed doseCharge pumpElectronic engineeringOptoelectronicsElectrical and Electronic EngineeringbusinessScalingIEEE Transactions on Nuclear Science
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Low Energy Protons at RADEF - Application to Advanced eSRAMs

2014

A low energy proton facility has been developed at RADEF, Jyvskyl, Finland. The proton energy selection, calibration and dosimetry are described. The first experiment with external users was performed using two memory test vehicles fabricated with 28 nm technology. Examples of single event upset measurements in the test vehicles embedded SRAMs (eSRAMs) as a function of proton energy are provided.

PhysicsProtonta114ta213business.industryNuclear engineeringElectrical engineeringProton energySEE testLow energyLow energy proton facilitySingle event upsetCalibrationDosimetryMemory testbusiness
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Dynamic Test Methods for COTS SRAMs

2014

International audience; In previous works, we have demonstrated the importance of dynamic mode testing of SRAM components under ionizing radiation. Several types of failures are difficult to expose when the device is tested under static (retention) mode. With the purpose of exploring and defining the most complete testing procedures and reveal the potential hazardous behaviors of SRAM devices, we present novel methods for the dynamic mode radiation testing of SRAMs. The proposed methods are based on different word address accessing schemes and data background: Fast Row, Fast Column, Pseudorandom, Adjacent (Gray) and Inverse Adjacent (Gray). These methods are evaluated by heavy ion and atmos…

Pseudorandom number generatorsingle event upset (SEU)Nuclear and High Energy Physicsta114ta213Computer scienceCOTSneutrons65 nmmultiple cell upset (MCU)SRAMColumn (database)[SPI.TRON]Engineering Sciences [physics]/ElectronicsRadiation testingNuclear Energy and EngineeringElectronic engineering90 nmHeavy ionStatic random-access memoryElectrical and Electronic Engineeringheavy ionsNeutron irradiationWord (computer architecture)dynamic testDynamic testingIEEE Transactions on Nuclear Science
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TileCal optical multiplexer board 9U prototype

2007

This paper presents the architecture and the status of the optical multiplexer board (OMB) for the ATLAS/LHC Tile hadronic calorimeter (TileCal). This board will analyze the front-end data CRC to prevent bit and burst errors produced by radiation. Besides, due to its position within the data acquisition chain it will be used to emulate front-end data for tests. The first two prototypes of the final OMB 9U version have been produced at CERN. Detailed design issues and manufacture features of these prototypes are described. These prototypes are being validated whereas some firmware developments are being implemented in the programmable devices of the board. Functional descriptions of the boar…

ScheduleEngineeringLarge Hadron ColliderFirmwarebusiness.industrycomputer.software_genreMultiplexerData acquisitionSingle event upsetNuclear electronicsEmbedded systemField-programmable gate arraybusinesscomputer
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Introduction : spaces of upset in the Nordic region

2022

Abstract This introductory article opens the thematic issue Spaces of Upset in the Nordic Region. It introduces the contributions of the issue, outlines the concepts that unite them, and discusses the sociolinguistic area in which they are set: the Nordic region. Centering on Denmark, Finland and Sweden, the article offers an overview of some of the sociolinguistic, ideological and political characteristics of the region and the countries it comprises. The Nordic region is widely seen as a paradigm case of social stability, consensus and cohesion. This vision is, however, a mirage. To be sure, upset often lingers below the discursive veneer of Nordic harmony, concord and agreement. Breaking…

SwedenLinguistics and Languagekieli ja kieletsocial cohesionDenmarkThe Nordic regionTanskalanguage ideologymigrationLanguage and LinguisticsRuotsispaces of upsetsosiolingvistiikkakielellinen identiteettipohjoismaalaisetsiirtolaisuushyvinvointivaltiolanguage and the welfare stateSuomikielipolitiikkasosiaalinen koheesioFinland
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Single-Event Effects in the Peripheral Circuitry of a Commercial Ferroelectric Random-Access Memory

2018

This paper identifies the failure modes of a commercial 130-nm ferroelectric random access memory. The devices were irradiated with heavy-ion and pulsed focused X-ray beams. Various failure modes are observed, which generate characteristic error patterns, affecting isolated bits, words, groups of pages, and sometimes entire regions of the memory array. The underlying mechanisms are discussed. peerReviewed

X-rayFRAMsäteilyfysiikkaSEFIkäyttömuistitsingle-event effectstatic testmuistit (tietotekniikka)heavy ionsingle-event upsetdynamic test
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