Search results for " carbide"
showing 10 items of 101 documents
Effect of 20 MeV Electron Radiation on Long Term Reliability of SiC Power MOSFETs
2023
The effect of 20 MeV electron radiation on the lifetime of the silicon carbide power MOSFETs was investigated. Accelerated constant voltage stress (CVS) was applied on the pristine and irradiated devices and time-to-breakdown ( T BD ) and charge-to-breakdown ( Q BD ) of gate oxide were extracted and compared. The effect of electron radiation on the device lifetime reduction can be observed at lower stress gate-to-source voltage ( V GS ) levels. The models of T BD and Q BD dependence on the initial gate current ( I G0 ) are proposed which can be used to describe the device breakdown behaviour. peerReviewed
Proton irradiation-induced reliability degradation of SiC power MOSFET
2023
The effect of 53 MeV proton irradiation on the reliability of silicon carbide power MOSFETs was investigated. Post-irradiation gate voltage stress was applied and early failures in time-dependent dielectric breakdown (TDDB) test were observed for irradiated devices. The applied drain voltage during irradiation affects the degradation probability observed by TDDB tests. Proton-induced single event burnouts (SEB) were observed for devices which were biased close to their maximum rated voltage. The secondary particle production as a result of primary proton interaction with the device material was simulated with the Geant4-based toolkit. peerReviewed
Joint Spectral and Energy Efficiency Optimization for Downlink NOMA Networks
2020
Non-orthogonal multiple access (NOMA) holds the promise to be a key enabler of 5G communication. However, the existing design of NOMA systems must be optimized to achieve maximum rate while using minimum transmit power. To do so, this paper provides a novel technique based on multi-objective optimization to efficiently allocate resources in the multi-user NOMA systems supporting downlink transmission. Specifically, our unique optimization technique jointly improves spectrum and energy efficiency while satisfying the constraints on users quality of services (QoS) requirements, transmit power budget and successive interference cancellation. We first formulate a joint problem for spectrum and …
Synthesis and processing of nanocrystalline tungsten carbide: Towards cemented carbides with optimal mechanical properties
2011
Abstract Nanocrystalline tungsten carbide has been obtained by reduction/carburization at low temperature from precursors obtained by freeze-drying of aqueous solutions. Nanocrystalline WC powders with a adequate content of carbon were mixed with submicrometric Cobalt powder (12 wt.%), obtained by same synthesis method, and sintered in vacuum furnace. The cemented carbides fabricated from experimental powders were compared with both commercial ultrafine and nanocrystalline WC-12Co mixtures consolidated by the same route. The synthesised powders were characterized by X-ray powder diffraction, elemental analysis and scanning and high resolution transmission electron microscopy. On the other h…
Estimating Terrestrial Neutron-Induced SEB Cross-Sections and FIT Rates for High-Voltage SiC Power MOSFETs
2019
Cross sections and failure in time rates for neutron-induced single-event burnout (SEB) are estimated for SiC power MOSFETs using a method based on combining results from heavy ion SEB experimental data, 3-D TCAD prediction of sensitive volumes, and Monte Carlo radiation transport simulations of secondary particle production. The results agree well with experimental data and are useful in understanding the mechanisms for neutron-induced SEB data.
Nanocomposites of epoxy resin with graphene nanoplates and exfoliated graphite: Synthesis and electrical properties
2014
Nanocomposites are nowadays one of the most promising materials. Among different fillers, e.g. carbon nanotubes and silicon carbide nanowires (NWSiC), already used with epoxy resin matrices, graphene exfoliated graphite (EG) and graphene nanoplates have some characteristics that make them unique for electromagnetic shielding materials. However, there is still an unresolved problem of proper dispersion that will ensure the homogeneity of samples. To overcome this drawback, inorganic fibres were proposed. An amount of 0.25 phr (parts per hundred; filler content presented as wt.% of the whole polymeric matrix) NWSiC, added to the EG 1 phr/epoxy resin sample, efficiently prevents filler agglome…
Pd/Au/SiC Nanostructured Diodes for Nanoelectronics: Room Temperature Electrical Properties
2010
Pd/Au/SiC nanostructured Schottky diodes were fabricated embedding Au nanoparticles (NPs) at the metalsemiconductor interface of macroscopic Pd/SiC contacts. The Au NPs mean size was varied controlling the temperature and time of opportune annealing processes. The electrical characteristics of the nanostructured diodes were studied as a function of the NPs mean size. In particular, using the standard theory of thermoionic emission, we obtained the effective Schottky barrier height (SBH) and the effective ideality factor observing their dependence on the annealing time and temperature being the signature of their dependence on the mean NP size. Furthermore, plotting the effective SBH as a fu…
Seed‐Layer‐Free Atomic Layer Deposition of Highly Uniform Al 2 O 3 Thin Films onto Monolayer Epitaxial Graphene on Silicon Carbide
2019
Atomic layer deposition (ALD) is the method of choice to obtain uniform insulating films on graphene for device applications. Owing to the lack of out-of-plane bonds in the sp(2) lattice of graphene, nucleation of ALD layers is typically promoted by functionalization treatments or predeposition of a seed layer, which, in turn, can adversely affect graphene electrical properties. Hence, ALD of dielectrics on graphene without prefunctionalization and seed layers would be highly desirable. In this work, uniform Al2O3 films are obtained by seed-layer-free thermal ALD at 250 degrees C on highly homogeneous monolayer (1L) epitaxial graphene (EG) (amp;gt;98% 1L coverage) grown on on-axis 4H-SiC(00…
Estimating Terrestrial Neutron-Induced SEB Cross-Sections and FIT Rates for High-Voltage SiC Power MOSFETs
2019
Cross sections and failure in time rates for neutron-induced single-event burnout (SEB) are estimated for SiC power MOSFETs using a method based on combining results from heavy ion SEB experimental data, 3-D TCAD prediction of sensitive volumes, and Monte Carlo radiation transport simulations of secondary particle production. The results agree well with experimental data and are useful in understanding the mechanisms for neutron-induced SEB data. peerReviewed
Ion-Induced Energy Pulse Mechanism for Single-Event Burnout in High-Voltage SiC Power MOSFETs and Junction Barrier Schottky Diodes
2020
Heavy ion data suggest that a common mechanism is responsible for single-event burnout in 1200 V power MOSFETs and junction barrier Schottky diodes. Similarly, heavy ion data suggest a common mechanism is also responsible for leakage current degradation in both devices. This mechanism, based on ion-induced, highlylocalized energy pulses, is demonstrated in simulations and shown to be capable of causing degradation and singleevent burnout for both the MOSFETs and JBS diodes. peerReviewed