Search results for " device"
showing 10 items of 1082 documents
Surface plasmon effects on carbon nanotube field effect transistors
2011
Herein, we experimentally demonstrate surface plasmon polariton (SPP) induced changes in the conductivity of a carbon nanotube field effect transistor (CNT FET). SPP excitation is done via Kretschmann configuration while the measured CNT FET is situated on the opposite side of the metal layer away from the laser, but within reach of the launched SPPs. We observe a shift of 0.4 V in effective gate voltage. SPP-intermediated desorption of physisorbed oxygen from the device is discussed as a likely explanation of the observed effect. This effect is visible even at low SPP intensities and within a near-infrared range. peerReviewed
Stiffer, Stronger and Centrosymmetrical Class of Pentamodal Mechanical Metamaterials
2019
Pentamode metamaterials have been used as a crucial element to achieve elastical unfeelability cloaking devices. They are seen as potentially fragile and not simple for integration in anisotropic structures due to a non-centrosymmetric crystalline structure. Here, we introduce a new class of pentamode metamaterial with centrosymmetry, which shows better performances regarding stiffness, toughness, stability and size dependence. The phonon band structure is calculated based on the finite element method, and the pentamodal properties are evaluated by analyzing the single band gap and the ratio of bulk and shear modulus. The Poisson&rsquo
Toward Photopatternable Thin Film Optical Sensors Utilizing Reactive Polyphenylacetylenes
2013
Substituted polyphenylacetylenes featuring reactive pentafluorophenyl (PFP) ester moieties are synthesized. Parts of the reactive PFP groups are then converted with a mono ortho-nitrobenzyl-protected diamine in variable ratios. Thin films are prepared from these copolymers and irradiated with UV light (λ = 365 nm), resulting in crosslinking of the irradiated areas and hence enabling a photopatterning. We found that during the photocrosslinking process, the excess of PFP ester moieties is stable and remained intact, enabling a subsequent post-polymerization modification step with amines. Noteworthy, this subsequent modification with amines results in a dramatically shift in the UV-vis absorp…
Electrochromic Devices Incorporating Cr Oxide And Ni Oxide Films:
2000
Abstract Transparent films of Cr oxide and Ni oxide were made by reactive DC magnetron sputtering in Ar+O2+H2. They displayed anodic electrochromism with charge capacities similar to that of W oxide. Cr oxide was stable in acidic environments, while Ni oxide was stable in basic environments. Electrochromic devices were made with pristine Cr oxide or Ni oxide films operating in conjunction with W oxide and a proton conducting electrolyte. Of the two oxides, Cr oxide film allowed device operation at a lower voltage span, while the device with Ni oxide film yielded a higher transmittance in the bleached state, a larger absorptance modulation, and a more neutral color.
Nd:KGW Laser under Flashlamp-pumping at Repetition Rate up to 50 Hz and Average Power of 70 W (free-lasing and Q-switched mode)
1997
The laser performance of Nd:KGd(WO4)2 crystal or Nd:KGW has been studied under flashlamp-pumping in the free-running and Q-switched mode (with active or passive Q-switching) at repetition rate up to 50 Hz. Maximum output powers respectively of 70 and 30 W were achieved at 1.06 pm with a maximum efficiency of 6%. Free-running emission was also obtained at 1.35 pm with a maximum average power of 24 W and a total efficiency of 2.9% at this wavelength. A comparison with a similar Nd:YAG crystal is given showing a noticeable advantage for Nd:KGW.
Analysis of multipactor RF breakdown in a waveguide containing a transversely magnetized ferrite
2016
In this paper, the multipactor RF breakdown in a parallel-plate waveguide partially filled with a ferrite slab magnetized normal to the metallic plates is studied. An external magnetic field is applied along the vertical direction between the plates in order to magnetize the ferrite. Numerical simulations using an in-house 3-D code are carried out to obtain the multipactor RF voltage threshold in this kind of structures. The presented results show that the multipactor RF voltage threshold at certain frequencies becomes considerably lower than for the corresponding classical metallic parallel-plate waveguide with the same vacuum gap
Growth kinetics of colloidal Ge nanocrystals for light harvesters
2016
Colloidal Ge nanocrystals (NCs) are gaining increased interest because of their potential application in low-cost optoelectronic and light harvesting devices. However, reliable control of colloidal NC synthesis is often an issue and a deeper understanding of the key-role parameters governing NC growth is highly required. Here we report an extended investigation on the growth of colloidal Ge NCs synthesized from a one-pot solution based approach. A systematic study of the effects of synthesis time, temperature and precursor concentration is elucidated in detail. X-ray diffraction (XRD) analysis reveals the presence of crystalline Ge NCs with a mean size (from 5 to 35 nm) decreasing with the …
Incident angle effect on heavy ion induced reverse leakage current in SiC Schottky diodes
2016
Heavy-ion induced degradation in the reverse leakage current of SiC Schottky power diodes shows distinct dependence on the angle of incidence. TCAD simulations have been used to study the physical mechanisms involved.
Mechanical cleaning of graphene using in situ electron microscopy
2020
Avoiding and removing surface contamination is a crucial task when handling specimens in any scientific experiment. This is especially true for two-dimensional materials such as graphene, which are extraordinarily affected by contamination due to their large surface area. While many efforts have been made to reduce and remove contamination from such surfaces, the issue is far from resolved. Here we report on an in situ mechanical cleaning method that enables the site-specific removal of contamination from both sides of two dimensional membranes down to atomic-scale cleanliness. Further, mechanisms of re-contamination are discussed, finding surface-diffusion to be the major factor for contam…
Carrier-induced quenching processes on the erbium luminescence in silicon nanocluster devices
2006
The luminescence-quenching processes limiting quantum efficiency in Er-doped silicon nanocluster light-emitting devices are investigated and identified. It is found that carrier injection, while needed to excite Er ions through electron-hole recombination, at the same time produces an efficient nonradiative Auger deexcitation with trapped carriers. This phenomenon is studied in detail and, on the basis of its understanding, we propose device structures in which sequential injection of electrons and holes can improve quantum efficiency by avoiding Auger processes. © 2006 The American Physical Society.