Search results for " polar"
showing 10 items of 1091 documents
A nondestructive analysis of the B diffusion in Ta–CoFeB–MgO–CoFeB–Ta magnetic tunnel junctions by hard x-ray photoemission
2010
This work reports on hard x-ray photoelectron spectroscopy (HAXPES) of CoFeB based tunnel junctions. Aim is to explain the role of the boron diffusion for the observed improvement of the tunneling magnetoresistance ratio with increasing annealing temperature. The high bulk sensitivity of HAXPES was used as a nondestructive technique to analyze CoFeB–MgO–CoFeB magnetic tunnel junctions. The investigated samples were processed at different annealing temperatures from 523 to 923 K. Hard x-ray core level spectroscopy reveals an enforced diffusion of boron from the CoFeB into the adjacent Ta layer with increasing annealing temperature. The dependence of the tunneling magnetoresistance on the ann…
Thermo-electric detection of waveguided surface plasmon propagation
2011
International audience; The thermo-electric detection of a waveguided surface plasmon traveling along one electrode of an in-plane integrated thermocouple is demonstrated. By using a particular design of the thermocouple, the thermo-electric signal due to the losses of the plasmon mode can be separated from the non-resonant heating of the waveguide. The thermo-electric signal associated with the plasmon propagation is proportional to the power coupled into the waveguided mode and exhibits a maximum at a distance from the excitation site depending on both the heat transfer coefficient of the system and the plasmon mode damping distance.
Surface plasmon effects on carbon nanotube field effect transistors
2011
Herein, we experimentally demonstrate surface plasmon polariton (SPP) induced changes in the conductivity of a carbon nanotube field effect transistor (CNT FET). SPP excitation is done via Kretschmann configuration while the measured CNT FET is situated on the opposite side of the metal layer away from the laser, but within reach of the launched SPPs. We observe a shift of 0.4 V in effective gate voltage. SPP-intermediated desorption of physisorbed oxygen from the device is discussed as a likely explanation of the observed effect. This effect is visible even at low SPP intensities and within a near-infrared range. peerReviewed
Design, near-field characterization, and modeling of 45 circle surface-plasmon Bragg mirrors
2006
The development of surface plasmon polariton (SPP) optical elements is mandatory in order to achieve surface plasmon based photonics. A current approach to reach this goal is to take advantage of the interaction of SPP with defects and design elements obtained by the micro- or nano-structuration of the metal film. In this work, we have performed a detailed study of the performance and behavior of SPP-Bragg mirrors, designed for 45\ifmmode^\circ\else\textdegree\fi{} incidence, based on this approach. Mirrors consisting of gratings of both metal ridges on the metal surface and grooves engraved in the metal, fabricated by means of electron beam lithography and focused ion beam, have been consi…
Frequency tunable polarization and intermodal modulation instability in high birefringence holey fiber
2009
International audience; We present an experimental analysis of polarization and intermodal noise-seeded parametric amplification, in which dispersion is phase matched by group velocity mismatch between either polarization or spatial modes in birefringent holey fiber with elliptical core composed of a triple defect. By injecting quasi-CW intense linearly polarized pump pulses either parallel or at 45 degrees with respect to the fiber polarization axes, we observed the simultaneous generation of polarization or intermodal modulation instability sidebands. Furthermore, by shifting the pump wavelength from 532 to 625 nm, we observed a shift of polarization sidebands from 3 to 8 THz, whereas int…
Phonon-induced spin relaxation of conduction electrons in silicon crystals
2014
Experimental works managing electrical injection of spin polarization in n-type and p-type silicon have been recently carried out up to room-temperature. In spite of these promising experimental results, a comprehensive theoretical framework concerning the influence of transport conditions on phonon-induced electron spin depolarization in silicon structures, in a wide range of values of lattice temperature, doping concentration and amplitude of external fields, is still at a developing stage. In order to investigate the spin transport of conduction electrons in lightly doped n-type Si crystals, a set of semiclassical multiparticle Monte Carlo simulations has been carried out. The mean spin …
Preparation of Heusler thin films: The quaternary alloy CO2Fe0.5Mn0.5Si
2008
In this work the basic strategies for the preparation of CO2Mn0.5Fe0.5Si as an example for Heusler alloy thin films will be described. Texture and magnetic properties of these films will be discussed, especially with regard to different buffer layers and annealing temperatures. Finally, we will show the integration of Heusler thin films into magnetic tunnel junctions (MTJs) and calculate the effective spin polarization. (c) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Preparation and Investigation of Interfaces of Co2Cr1−x Fe x Al Thin Films
2013
In the framework of spin polarization investigations of Heusler compounds by the measurement of the magnetoresistance (TMR) of tunneling junctions with AlO x barrier special emphasis is put on the role of the interfaces.
Spin-resolved terahertz spectroscopy
2016
As such, terahertz spectroscopy cannot resolve the spin structure of conducting particles. Here we introduce the spin sensitivity to terahertz spectroscopy by using the spin-valve configuration of the sample. As a result, the number density and momentum scattering time of conduction electrons in a ferromagnetic metal can be resolved according to their spin.
Epitaxial film growth and magnetic properties ofCo2FeSi
2006
We have grown thin films of the Heusler compound ${\mathrm{Co}}_{2}\mathrm{Fe}\mathrm{Si}$ by RF magnetron sputtering. On (100)-oriented MgO substrates we find fully epitaxial (100)-oriented and $L{2}_{1}$ ordered growth. On ${\mathrm{Al}}_{2}{\mathrm{O}}_{3}(11\overline{2}0)$ substrates, the film growth is (110)-oriented, and several in-plane epitaxial domains are observed. The temperature dependence of the electrical resistivity shows a power law with an exponent of $7∕2$ at low temperatures. Investigation of the bulk magnetic properties reveals an extrapolated saturation magnetization of $5.0{\ensuremath{\mu}}_{B}∕\mathrm{f.u.}$ at $0\phantom{\rule{0.3em}{0ex}}\mathrm{K}$. The films on $…