Search results for " semiconductor"
showing 10 items of 332 documents
Excited states engineering enables efficient near-infrared lasing in nanographenes
2021
The spectral overlap between stimulated emission (SE) and absorption from dark states (i.e. charges and triplets) especially in the near-infrared (NIR), represents one of the most effective gain loss channel in organic semiconductors. Recently, bottom-up synthesis of atomically precise graphene nanostructures, or nanographenes (NGs), has opened a new route for the development of environmentally and chemically stable materials with optical gain properties. However, also in this case, the interplay between gain and absorption losses has hindered the attainment of efficient lasing action in the NIR. Here, we demonstrate that the introduction of two fluoranthene imide groups to the NG core lead…
An electrochemical route towards the fabrication of nanostructured semiconductor solar cells
2010
This work presents our preliminary results regarding an electrochemical process which allows the growth of nanostructured materials by means of nanopore templates. Also we analyze possible applications of this process to fabricate nanostructured semiconductors, such as CIGS, suitable for photovoltaic devices, and we consider the implications from the perspective of characterization techniques and device modelling when using such a technology.
Growth of low-density vertical quantum dot molecules with control in energy emission
2010
This article is distributed under the terms of the Creative Commons Attribution Noncommercial License.-- This article is part of the series 8th International Workshop on Epitaxial Semiconductors on Patterned Substrates and Novel Index Surfaces.
ZnO Thin films doped with Erbium: Elaboration, Characterization and nonlinear optical properties measurements
2011
In this paper, we investigate NLO properties of ZnO nanostructures for optoelectronics applications. It is shown that carefully designed and fabricated nanostructured ZnO films posses some advantageous for practical use and to generate more and short wavelengths and, when combined with TiO , produce a core–shell structure that 2 reduces the combination rate. The limitations of ZnO-based DSCs are also discussed and several possible methods are suggested in order to expand the basic knowledge of ZnO to TiO , motivating further improvement 2 in the power-conversion efficiency of third harmonic generation THG.
Size and emission wavelength control of InAs/InP quantum wires
2005
5 páginas, 5 figuras, 1 tabla.-- Comunicación presentada al E-MRS 2004 Spring Meeting celebrado en Estrasburgo (Francia) Mayo del 2004.
Probing the magnetic properties of cobalt–germanium nanocable arrays
2005
We report the synthesis of high density arrays of coaxial nanocables, consisting of germanium nanowires surrounded by cobalt nanotube sheaths, within anodic aluminium oxide membranes. The nanocable arrays were prepared using a supercritical fluid inclusion process, whereby the cobalt nanotubes were first deposited on the pore walls of the nanoporous membranes and subsequently filled with germanium to form coaxial nanocables. The composition and structure of the metal–semiconductor nanostructures was investigated by electron microscopy, energy dispersive X-ray mapping and X-ray diffraction at high angles. The magnetic properties of the co-axial nanocables were probed using a superconducting …
Simulation of electronic states in a nanowire field-effect transistor
2015
De acuerdo con la ley empírica de Moore, el número de transistores en un circuito integrado se ve duplicado aproximadamente cada dos años. Una vez traspasada la frontera hacia la escala nanométrica, estos dispositivos comienzan a padecer efectos adversos al funcionamiento deseable de un transistor, como la pérdida de integridad eléctrica, efectos debidos a la corta longitud del canal o la falta de reproducibilidad. Las nanoestructuras cristalinas semiconductoras conocidas como nanohilos están emergiendo como candidatos prometedores para formar una nueva base alternativa de los transistores de efecto campo y continuar la miniaturización tecnológica en la escala nanométrica. Esto es debido al…
Heavy Ion Induced Degradation in SiC Schottky Diodes : Bias and Energy Deposition Dependence
2017
Experimental results on ion-induced leakage current increase in 4H-SiC Schottky power diodes are presented. Monte Carlo and TCAD simulations show that degradation is due to the synergy between applied bias and ion energy deposition. This degradation is possibly related to thermal spot annealing at the metal semiconductor interface. This thermal annealing leads to an inhomogeneity of the Schottky barrier that could be responsible for the increase leakage current as a function of fluence. peerReviewed
Impact of Electrical Stress and Neutron Irradiation on Reliability of Silicon Carbide Power MOSFET
2020
International audience; The combined effects of electrical stress and neutron irradiation of the last generation of commercial discrete silicon carbide power MOSFETs are studied. The single-event burnout (SEB) sensitivity during neutron irradiation is analyzed for unstressed and electrically stressed devices. For surviving devices, a comprehensive study of the breakdown voltage degradation is performed by coupling the electrical stress and irradiation effects. In addition, mutual influences between electrical stress and radiative constraints are investigated through TCAD modeling.
Heavy-Ion-Induced Degradation in SiC Schottky Diodes : Incident Angle and Energy Deposition Dependence
2017
International audience; Heavy-ion-induced degradation in the reverse leakage current of SiC Schottky power diodes exhibits a strong dependence on the ion angle of incidence. This effect is studied experimentally for several different bias voltages applied during heavy-ion exposure. In addition, TCAD simulations are used to give insight on the physical mechanisms involved.