Search results for "Absorption edge"
showing 10 items of 95 documents
Correlation between optical and transport properties of Ga-doped ZnO thin films prepared by pulsed laser deposition
2006
Abstract In this paper we report on the correlation between the transport and optical properties of Ga-doped ZnO films epitaxially grown on C-oriented sapphire substrates by means of pulsed laser deposition. Thin films with electron concentrations ranging between 10 20 and 10 21 cm −3 were prepared from targets containing 0.25–5 at.% Ga. The Ga content in the thin films was estimated by XPS, from the ratio between the intensities of the 2p peaks of Ga and Zn. The electron concentration in the films is very close to the Ga content for films prepared from low Ga content targets even at high deposition temperature. For Ga contents in the target larger than 1%, the Ga content in the films incr…
Advances in Perovskite Solar Cells.
2015
Organolead halide perovskite materials possess a combination of remarkable optoelectronic properties, such as steep optical absorption edge and high absorption coefficients, long charge carrier diffusion lengths and lifetimes. Taken together with the ability for low temperature preparation, also from solution, perovskite-based devices, especially photovoltaic (PV) cells have been studied intensively, with remarkable progress in performance, over the past few years. The combination of high efficiency, low cost and additional (non-PV) applications provides great potential for commercialization. Performance and applications of perovskite solar cells often correlate with their device structures…
Inhomogeneous free-electron distribution in InN nanowires: Photoluminescence excitation experiments
2010
Photoluminescence excitation (PLE) spectra have been measured for a set of self-assembled InN nanowires (NWs) and a high-crystalline quality InN layer grown by molecular-beam epitaxy. The PLE experimental lineshapes have been reproduced by a self-consistent calculation of the absorption in a cylindrical InN NW. The differences in the PLE spectra can be accounted for the inhomogeneous electron distribution within the NWs caused by a bulk donor concentration $({N}_{D}^{+})$ and a two-dimensional density of ionized surface states $({N}_{ss}^{+})$. For NW radii larger than 30 nm, ${N}_{D}^{+}$ and ${N}_{ss}^{+}$ modify the absorption edge and the lineshape, respectively, and can be determined f…
Multi-frequency observations of SWIFT J1626.6-5156
2011
SWIFT J1626.6-5156 is an X-ray pulsar that was discovered in December 2005 during an X-ray outburst. Although the X-ray data suggest that the system is a high-mass X-ray binary, very little information exists on the nature of the optical counterpart. We have analysed all RXTE observations since its discovery, archived optical spectroscopic and photometric data and obtained for the first time near-IR spectra. The K-band spectrum shows HeI 20581 A and HI 21660 A (Brackett-gamma) in emission, which confine the spectral type of the companion to be earlier than B2.5. The H-band spectrum exhibits the HI Br-18-11 recombination series in emission. The most prominent feature of the optical band spec…
Some aspects of pulsed laser deposition of Si nanocrystalline films
2009
International audience; Nanocrystalline silicon films were deposited by a picosecond laser ablation on different substrates in vacuum at room temperature. A nanocrystalline structure of the films was evidenced by atomic force microscopy (AFM), optical and Raman spectroscopies. A blue shift of the absorption edge was observed in optical absorption spectra, and a decrease of the optical phonon energy at the Brillouin zone centre was detected by Raman scattering. Early stages of nanocrystalline film formation on mica and HOPG substrates were studied by AFM. Mechanism of nanocrystal growth on substrate is discussed.
Laser-Calorimetric Study of Fundamental Absorption Edge in Pb,La(ZrTi)O3 (PLZT) Perovskite Ceramics
2000
The values of the light absorption coefficient of PLZT 10/65/35 ceramics at selected wavelengths have been obtained by laser calorimetric measurements. The absorption coefficient of the PLZT ceramics is an exponential function of the photon energy. Two values of characteristic Urbach energy have been found ΔE1 = 106 meV and ΔE2 = 238 meV. The first one is a characteristic of the potential of electron-phonon interaction of the optically excited transitions from the valence band to the conduction band and does not depend on lattice defects or admixtures. The other characterises the electron-phonon interaction at optical transitions between two localized electron states in the energy gap separ…
Resonance scattering in macromolecular structure research
2005
Resonance (or anomalous) X-ray scattering of partially ordered macromolecular structures, amorphous materials and solutions is encountered in the near edge region of X-ray absorption edges where the resonant real part f' of atomic form factors shows the strongest dispersion. The requirements of spectral brilliance in the near absorption edges can only be met by synchrotron radiation emitted from high energy electron (positron) storage rings. Resonance scattering yields three basic scattering functions. This compares to contrast variation in neutron scattering. The relations to isomorphous replacement methods of crystallography are discussed. The analysis of the basic scattering functions in…
Growth and characterization of ZnO1−xSx highly mismatched alloys over the entire composition
2015
Alloys from ZnO and ZnS have been synthesized by radio-frequency magnetron sputtering over the entire alloying range. The ZnO1−xSx films are crystalline for all compositions. The optical absorption edge of these alloys decreases rapidly with small amount of added sulfur (x ∼ 0.02) and continues to red shift to a minimum of 2.6 eV at x = 0.45. At higher sulfur concentrations (x > 0.45), the absorption edge shows a continuous blue shift. The strong reduction in the band gap for O-rich alloys is the result of the upward shift of the valence-band edge with x as observed by x-ray photoelectron spectroscopy. As a result, the room temperature bandgap of ZnO1−xSx alloys can be tuned from 3.7 eV to …
Positronics of radiation-induced effects in chalcogenide glassy semiconductors
2015
Using As2S3 and AsS2 glasses as an example, the principal possibility of using positron annihilation spectroscopy methods for studying the evolution of the free volume of hollow nanoobjects in chalcogenide glassy semiconductors exposed to radiation is shown. The results obtained by measurements of the positron annihilation lifetime and Doppler broadening of the annihilation line in reverse chronological order are in full agreement with the optical spectroscopy data in the region of the fundamental absorption edge, being adequately described within coordination defect-formation and physical-aging models.
Exciton interaction with Ce3+ and Ce4+ ions in (LuGd)3(Ga,Al)5O12 ceramics
2021
The authors acknowledge the expert help of the staff of MAX IV Laboratory. The research leading to this result has been supported by the project CALIPSOplus under the Grant Agreement 730872 from the EU Framework Programme for Research and Innovation HORIZON 2020. I.V. acknowledges the support of Russian Foundation for Basic Research # 20-52-S52001.