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RESEARCH PRODUCT
Some aspects of pulsed laser deposition of Si nanocrystalline films
I. TaleAndrejs PetruhinsJelena ButikovaBoris PolyakovAlexei Kuzminsubject
Laser ablationChemistryNanocrystalline siliconAnalytical chemistryPhysics::Optics02 engineering and technology021001 nanoscience & nanotechnologyCondensed Matter Physics01 natural sciencesNanocrystalline materialElectronic Optical and Magnetic MaterialsPulsed laser depositionCondensed Matter::Materials Sciencesymbols.namesakeAbsorption edgeCondensed Matter::SuperconductivityPhysical Sciences0103 physical sciencessymbolsThin film010306 general physics0210 nano-technologyRaman spectroscopyInstrumentationRaman scatteringdescription
International audience; Nanocrystalline silicon films were deposited by a picosecond laser ablation on different substrates in vacuum at room temperature. A nanocrystalline structure of the films was evidenced by atomic force microscopy (AFM), optical and Raman spectroscopies. A blue shift of the absorption edge was observed in optical absorption spectra, and a decrease of the optical phonon energy at the Brillouin zone centre was detected by Raman scattering. Early stages of nanocrystalline film formation on mica and HOPG substrates were studied by AFM. Mechanism of nanocrystal growth on substrate is discussed.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2009-09-17 | The European Physical Journal Applied Physics |