Search results for "Allium"

showing 10 items of 385 documents

Above-bandgap ordinary optical properties of GaSe single crystal

2009

We report above-bandgap ordinary optical properties of ε-phase GaSe single crystal. Reference-quality pseudodielectric function 〈ε(E)〉 = 〈ε1(E)〉+i〈ε2(E)〉 and pseudorefractive index 〈N(E)〉 = 〈n(E)〉+i〈k(E)〉 spectra were measured by spectroscopic ellipsometry from 0.73 to 6.45 eV at room temperature for the light polarization perpendicular to the optic axis (math⊥math). The 〈ε〉 spectrum exhibited several interband-transition critical-point structures. Analysis of second-energy derivatives calculated numerically from the measured data yielded the critical-point energy values. Carmen.Martinez-Tomas@uv.es

EllipsometryCondensed matter physicsChemistryBand gapUNESCO::FÍSICAGallium compoundsRefractive indexCritical points ; Dielectric function ; Ellipsometry ; Energy gap ; Gallium compounds ; III-VI semiconductors ; Refractive indexIII-VI semiconductorsPhysics::OpticsGeneral Physics and AstronomyCritical pointsDielectric functionPolarization (waves)Spectral lineEnergy gapOptical axis:FÍSICA [UNESCO]EllipsometryPerpendicularRefractive indexSingle crystalJournal of Applied Physics
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Neutron irradiation defects in gallium sulfide: Optical absorption measurements

1997

Gallium sulfide single crystals have been irradiated with different thermal neutron doses. Defects introduced by neutron irradiation turn out to be optically active, giving rise to absorption bands with energies ranging from 1.2 to 3.2 eV. Bands lying in the band-gap exhibit Gaussian shape. Their energies and widths are independent of the irradiation dose, but their intensities are proportional to it. Thermal annealing is completed in two stages, ending at around 500 and 720 K, respectively. Centers responsible for the absorption bands are proposed to be gallium-vacancy-galliuminterstitial complexes in which the distance between the vacancy (acceptor) and the interstitial (donor) determines…

Energy GapInterstitialsMaterials scienceIII-VI SemiconductorsAnnealing (metallurgy)Band gapVacancies (Crystal)Neutron EffectsUNESCO::FÍSICAGeneral Physics and AstronomyGallium Compounds ; III-VI Semiconductors ; Neutron Effects ; Defect Absorption Spectra ; Energy Gap ; Vacancies (Crystal) ; Interstitials ; Annealing ; Visible SpectraMolecular physicsAcceptorNeutron temperatureAnnealingCrystallographyCondensed Matter::Materials ScienceAbsorption bandVisible Spectra:FÍSICA [UNESCO]Vacancy defectGallium CompoundsIrradiationDefect Absorption SpectraNeutron irradiation
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CIGS PV Module Characteristic Curves Under Chemical Composition and Thickness Variations

2014

This paper analyzes how the electrical characteristics of a CIGS photovoltaic module are affected by the chemical composition and by the thickness variations of the CIGS absorber. The electrical characteristics here considered are the short circuit current, the open circuit voltage, the efficiency and the power peak. The chemical composition is varied by tuning the ratio between gallium and indium. This analysis has been performed by means of the wxAMPS software, developed by the University of Illinois. The above variations have been taken into account on a PV module made of 72 cells. This analysis has been carried out employing a PV module mathematical model developed and implemented by th…

EngineeringOpen-circuit voltagebusiness.industryPhotovoltaic systemchemistry.chemical_elementSettore ING-INF/02 - Campi ElettromagneticiSettore ING-IND/32 - Convertitori Macchine E Azionamenti ElettriciCopper indium gallium selenide solar cellsPhotovoltaic Modules characterizationSettore ING-INF/01 - ElettronicaPower (physics)CIGS Photovoltaic ModulechemistryElectronic engineeringOptoelectronicsGalliumbusinessMATLABShort circuitcomputerSettore ING-INF/07 - Misure Elettriche E ElettronicheIndiumcomputer.programming_language
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2020

The reaction of the copper(I) β-diketiminate copper complex {(Cu(BDIMes))2(μ-C6H6)} (BDIMes = N,N'-bis(2,4,6-trimethylphenyl)pentane-2,4-diiminate) with the low-valent group 13 metal β-diketiminates M(BDIDip) (M = Al or Ga; BDIDip = N,N'-bis(2,6-diisopropylphenyl)pentane-2,4-diiminate) in toluene afforded the complexes {(BDIMes)CuAl(BDIDip)} and {(BDIMes)CuGa(BDIDip)}. These feature unsupported copper-aluminum or copper-gallium bonds with short metal-metal distances, Cu-Al = 2.3010(6) A and Cu-Ga = 2.2916(5) A. Density functional theory (DFT) calculations showed that approximately half of the calculated association enthalpies can be attributed to London dispersion forces.

Enthalpychemistry.chemical_elementGeneral Chemistry010402 general chemistry01 natural sciencesBiochemistryCopperLondon dispersion forceCatalysis3. Good health0104 chemical sciencesMetalCrystallographyColloid and Surface ChemistrychemistryAluminiumvisual_artvisual_art.visual_art_mediumDensity functional theoryGalliumDispersion (chemistry)Journal of the American Chemical Society
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Extractability of metals and ecotoxicity of soils from two old wood impregnation sites in Finland

2003

Abstract Four metal-contaminated soil samples were classified using physical methods, extracted by selective extraction procedures and analyzed for chemical concentrations. De-ionized water, 0.01 mol/l barium chloride, 1 mol/l ammonium acetate and concentrated nitric acid were used as extraction solutions. Ecotoxicity of water extracts and soil samples was analyzed in order to describe the bioavailability of the contaminants. Samples from old wood impregnation plants contained high amounts of As, Cu, Cr and Zn, which originated from chromated copper arsenate, ammoniacal copper–zinc arsenate, and ammoniacal copper quaternary compound. Total As concentrations of the heavily contaminated sampl…

Environmental EngineeringSoil testBiological AvailabilityGerminationSensitivity and SpecificityAlliumchemistry.chemical_compoundMetals HeavyAnimalsAraceaeSoil PollutantsEnvironmental ChemistryChromated copper arsenateArthropodsWaste Management and DisposalFinlandExtraction (chemistry)ArsenateLettuceSoil typeWoodPollutionSoil contaminationchemistryEnvironmental chemistrySeedsSoil waterArsenatesBiological AssayEcotoxicityEnvironmental MonitoringScience of The Total Environment
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Counterintuitive Mechanisms of the Addition of Hydrogen and Simple Olefins to Heavy Group 13 Alkene Analogues

2013

The mechanism of the reaction of olefins and hydrogen with dimetallenes ArMMAr (Ar = aromatic group; M = Al or Ga) was studied by density functional theory calculations and experimental methods. The digallenes, for which the most experimental data are available, are extensively dissociated to gallanediyl monomers, :GaAr, in hydrocarbon solution, but the calculations and experimental data showed also that they react with simple olefins, such as ethylene, as intact ArGaGaAr dimers via stepwise [2 + 2 + 2] cycloadditions due to their considerably lower activation barriers vis-à-vis the gallanediyl monomers, :GaAr. This pathway was preferred over the [2 + 2] cycloaddition of olefin to monomeric…

EthyleneStereochemistryGalliumAlkenesBiochemistryMedicinal chemistryCatalysisPropenechemistry.chemical_compoundColloid and Surface ChemistryOrganometallic CompoundsSinglet stateta116chemistry.chemical_classificationOlefin fiberDiradicalChemistryAlkeneGeneral ChemistryCycloadditionCyclizationYield (chemistry)Quantum TheoryCyclobutanesAluminumHydrogenJournal of the American Chemical Society
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Splitting of surface-related phonons in Raman spectra of self-assembled GaN nanowires

2012

cited By 2; International audience; Micro Raman spectroscopy studies have been performed on GaN nanowires grown by Plasma-Assisted Molecular Beam Epitaxy on Silicon (111) substrate. From the analysis of experimental data, the emergence of a two peaks band located near 700 cm-1 has been attributed to the Raman scattering by surface-related phonons. We have analyzed the surface character of these two modes by changing the dielectric constant of the exterior medium and some experimental parameters. Furthermore, a theoretical model describing the nanowires ensemble by means of an effective dielectric function has been used to interpret the Raman scattering results. Those numerical simulations a…

Experimental parametersRaman scatteringMaterials sciencePhononNanowireGallium nitride02 engineering and technologyDielectricDielectric functions01 natural sciencessymbols.namesakechemistry.chemical_compoundCondensed Matter::Materials ScienceExperimental observation0103 physical sciencesTheoretical models010302 applied physicsSilicon (111) substrates[PHYS]Physics [physics]Condensed matter physicsNanowiresSurface phononGallium nitride021001 nanoscience & nanotechnologyCondensed Matter PhysicschemistryDielectric propertiesRaman spectroscopysymbolsPhononsPlasma-assisted molecular beam epitaxyMicro Raman Spectroscopy0210 nano-technologyRaman spectroscopyMolecular beam epitaxyRaman scatteringSurface phononMolecular beam epitaxy
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Biomethylation of thallium by bacteria and first determination of biogenic dimethylthallium in the ocean

2000

To investigate a possible biomethylation of thallium, incubation experiments were carried out under aerobic conditions with a sewage sludge and with a mixed bacterial culture isolated from a sewage sludge, as well as under anaerobic conditions with a fresh-water lake sediment, by adding Tl(I) nitrate to these systems. Only in the case of the anaerobic sediment was a significant production of dimethylthallium observed (after three-weeks). Analysing different surface seawater samples and those from a single depth profile down to 4000 m, dimethylthallium was determined above the detection limit of 0.4 ng L−1 in about 20% of all samples, ranging from 0.5 to 3.2 ng l−1. The proportion of dimethy…

Extraction (chemistry)chemistry.chemical_elementGeneral ChemistryIsotope dilutionInorganic Chemistrychemistry.chemical_compoundWater columnchemistryNitrateEnvironmental chemistryThalliumSeawaterSurface waterSludgeApplied Organometallic Chemistry
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Fabrication and Photoelectrochemical Behavior of Ordered CIGS Nanowire Arrays for Application in Solar Cells

2010

In this work, we report some preliminary results concerning the fabrication of quaternary copper, indium, gallium, and selenium CIGS nanowires that were grown inside the channels of an anodic alumina membrane by one-step potentiostatic deposition at different applied potentials and room temperature. A tunable nanowire composition was achieved through a manipulation of the applied potential and electrolyte composition. X-ray diffraction analysis showed that nanowires, whose chemical composition was determined by energy-dispersive spectroscopy analysis, were amorphous. A composition of Cu0.203In0.153Ga0.131Se0.513, very close to the stoichiometric value, was obtained. These nanostructures wer…

FabricationMaterials scienceGeneral Chemical EngineeringNanowirechemistry.chemical_elementNanotechnologyCopper Indium Gallium Selenidechemistry.chemical_compoundCopper Indium Gallium Selenide; Solar Cells; Template Synthesis; Electrodeposition; Anodic Alumina MembranesElectrodepositionElectrochemistryGeneral Materials ScienceElectrical and Electronic EngineeringPhysical and Theoretical ChemistryGalliumAnodic Alumina MembranesPhotocurrentbusiness.industryCopper indium gallium selenide solar cellsAmorphous solidSettore ING-IND/23 - Chimica Fisica ApplicatachemistrySolar CellTemplate SynthesiOptoelectronicsbusinessCopper indium gallium selenideIndiumElectrochemical and Solid-State Letters
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Multilevel pattern generation by GaN laser lithography: an application to beam shaper fabrication

2006

The new GaN lasers represent a unique combination of compactness, reliability, energy efficiency, and short wavelength. With respect to the previous state of the art in direct laser write lithography, based on gas lasers, this is resulting in a breakthrough, and is opening the way to real desktop micropatterning. The field of diffractive optics can immediately benefit by the availability of a new breed of pattern generators, based on such sources, mainly for fast turnaround device development. This paper presents the technical advantages involved in the use of 405 nm GaN lasers for one-step multilevel patterning. Beam modulation, exposure control and overall process strategy are discussed. …

FabricationMaterials sciencebusiness.industryLasersGallium nitrideLaserSettore ING-INF/01 - Elettronicalaw.inventionchemistry.chemical_compoundOpticschemistryDigital pattern generatorlawModulationlaser markingOptoelectronicsScanningbusinessLithographyBeam (structure)Maskless lithographySPIE Proceedings
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