Search results for "Allium"
showing 10 items of 385 documents
Raman Investigations to Identify Corallium rubrum in Iron Age Jewelry and Ornaments
2016
International audience; During the Central European Iron Age, more specifically between 600 and 100 BC, red precious corals (Corallium rubrum) became very popular in many regions, often associated with the so-called (early) Celts. Red corals are ideally suited to investigate several key questions of Iron Age research, like trade patterns or social and economic structures. While it is fairly easy to distinguish modern C. rubrum from bone, ivory or shells, archaeologists are confronted with ancient, hence altered, artifacts. Due to ageing processes, archaeological corals lose their intensive red color and shiny surface and can easily be confused with these other light colored materials. We pr…
Biomethylation of thallium by bacteria and first determination of biogenic dimethylthallium in the ocean
2000
To investigate a possible biomethylation of thallium, incubation experiments were carried out under aerobic conditions with a sewage sludge and with a mixed bacterial culture isolated from a sewage sludge, as well as under anaerobic conditions with a fresh-water lake sediment, by adding Tl(I) nitrate to these systems. Only in the case of the anaerobic sediment was a significant production of dimethylthallium observed (after three-weeks). Analysing different surface seawater samples and those from a single depth profile down to 4000 m, dimethylthallium was determined above the detection limit of 0.4 ng L−1 in about 20% of all samples, ranging from 0.5 to 3.2 ng l−1. The proportion of dimethy…
Microcavity Light Emitting Diodes Based on GaN membranes Grown by Molecular Beam Epitaxy on Silicon
2003
Resonant-cavity InGaN/GaN quantum well light emitting diodes have been fabricated. Nitride layers were grown by molecular beam epitaxy on Si (111). We fabricated the structures using a combination of Si substrate etching, GaN etching and dielectric (Ta2O5/SiO2) mirror deposition. The electroluminescence spectra show that the emission within the distributed Bragg reflector stop band is enhanced in the membrane microcavity. The cavity modes are broadened by some cavity length non-uniformity that is introduced when the GaN is back etched to adjust the cavity length. This process does not need any transfer on an intermediate host substrate and is fully compatible with large area semiconductor p…
[68Ga]Ga-DO2A-(OBu-l-tyr)2: Synthesis, 68Ga-radiolabeling and in vitro studies of a novel 68Ga-DO2A-tyrosine conjugate as potential tumor tracer for …
2009
The synthesis, (68)Ga-labeling and in vitro study of the novel tyrosine chelate derivative [(68)Ga]Ga-1,4,7,10-tetraazacyclododecane-1,7-diacetic acid-4,10-di-(O-butyl)-l-tyrosine ([(68)Ga]Ga-DO(2)A-(OBu-l-tyr)(2)) as a potential tracer for imaging tumor metabolism by positron emission tomography (PET) is presented. This approach combines the biological amino acid transporter targeting properties of l-tyrosine with the outstanding availability of (68)Ga(III) via the (68)Ge/(68)Ga generator. In vitro studies utilizing the F98-glioblastoma cell line revealed specific uptake of [(68)Ga]Ga-DO2A-(OBu-l-tyr)(2) that was comparable to that of the reference O-(2-[(18)F]fluoroethyl)-l-tyrosine (FET)…
Alkylsilyl compounds as enablers of atomic layer deposition: analysis of (Et3Si)3As through the GaAs process
2016
A new chemistry has been developed to deposit GaAs, the quintessential compound semiconductor. The ALD process is based on a dechlorosilylation reaction between GaCl3 and (Et3Si)3As. Characteristic ALD growth was demonstrated, indicating good applicability of the alkylsilyl arsenide precursor. ALD of GaAs produced uniform, amorphous and stoichiometric films with low impurity content. This was done with saturating growth rates and an easily controlled film thickness. Crystallization was achieved by annealing. Even though the growth rate strongly decreased with increasing deposition temperature, good quality film growth was demonstrated at 175 to 200 °C, indicating the presence of an ALD wind…
Plug plant fertilization and planting density affect onion productivity in sicily
2009
The aim of this study was to evaluate the effects of different planting density and different levels of plug plant fertilization on onion production in Sicily. Onion landrace ‘Bisacquino’ was sown in the first week of January 2006 in a unheated greenhouse in polystyrene plug trays. Seedlings were fertigated with the following three different solutions containing (in mg l-1) 800 N - 400 P - 400 K, 1200 N - 600 P - 600 K or 1600 N- 800 P - 800 K. Trays were subirrigated with the nutrient solution both at one leaf stage and 10 days prior transplanting. Plug plants were field transplanted in the Sicilian hilly countryside. The plugs consisting of one, two, or three onion plants were set 20 cm a…
High‐Quality Si‐Doped β‐Ga 2 O 3 Films on Sapphire Fabricated by Pulsed Laser Deposition
2020
The EU Horizon 2020 project CAMART2 is acknowledged for partly supporting the project, and the Ion Technology Centre, ITC, in Sweden is acknowledged for ion beam analysis (ERDA).
Aluminum and Gallium Substitution in Yttrium and Lutetium Aluminum–Gallium Garnets: Investigation by Single-Crystal NMR and TSL Methods
2016
The work reports the results on 71Ga and 27Al NMR investigation of the gallium and aluminum ions distribution over tetrahedral and octahedral positions in the Y3Al5−x GaxO12:Ce single crystals and Lu3Al5−xGaxO12:Ce single-crystalline epitaxial films. The gallium content x varies between 0 and 5 in crystals and between 0.3 and 2 in films.. We find that in both the Y- and Lu-based solid solutions the larger gallium ions are preferably located at the tetrahedral position while the smaller aluminum ions prefer the octahedral position of the garnet host. Based on NMR data, the dependence of fractional occupation parameters of the tetrahedral site of Ga and Al ions on the Ga content is determined…
Above-bandgap ordinary optical properties of GaSe single crystal
2009
We report above-bandgap ordinary optical properties of ε-phase GaSe single crystal. Reference-quality pseudodielectric function 〈ε(E)〉 = 〈ε1(E)〉+i〈ε2(E)〉 and pseudorefractive index 〈N(E)〉 = 〈n(E)〉+i〈k(E)〉 spectra were measured by spectroscopic ellipsometry from 0.73 to 6.45 eV at room temperature for the light polarization perpendicular to the optic axis (math⊥math). The 〈ε〉 spectrum exhibited several interband-transition critical-point structures. Analysis of second-energy derivatives calculated numerically from the measured data yielded the critical-point energy values. Carmen.Martinez-Tomas@uv.es
Splitting of surface-related phonons in Raman spectra of self-assembled GaN nanowires
2012
cited By 2; International audience; Micro Raman spectroscopy studies have been performed on GaN nanowires grown by Plasma-Assisted Molecular Beam Epitaxy on Silicon (111) substrate. From the analysis of experimental data, the emergence of a two peaks band located near 700 cm-1 has been attributed to the Raman scattering by surface-related phonons. We have analyzed the surface character of these two modes by changing the dielectric constant of the exterior medium and some experimental parameters. Furthermore, a theoretical model describing the nanowires ensemble by means of an effective dielectric function has been used to interpret the Raman scattering results. Those numerical simulations a…