Search results for "Amorphous solid"

1992

The synthesis and the results of the structural study of two copolysiloxanes with laterally fixed trinitrofluorenone (TNF) units is reported. The two copolysiloxanes having 2,4 (1a) and 5,3 (1b) dimethylsiloxane comonomer units per TNF side group differ significantly in their phase behaviour as evident from optical microscopy, differential scanning calorimetry and X-ray scattering: 1b shows a nematic mesophase whereas 1a is an amorphous material. The different phase behaviour is discussed in terms of microphase separation between the siloxane backbone and TNF side groups.

From Single Molecules to Nanoscopically Structured Functional Materials

2006

AbstractThe synthesis of MS2 (M = Mo, W) onion-like nanoparticles by means of a high temperature MOCVD process starting from W(CO)6 and elemental sulfur is reported. The reaction can also be carried out in two steps where the intermediate amorphous WS2 nanoparticles formed through the high temperature reaction of tungsten and sulfur in the initial phase of the reaction are isolated and converted in a separate annealing step to onion-type WS2 nanoparticles. Based on a study of the temperature dependence of the reaction a set of conditions could be derived where onion-like structures were formed in a one-step reaction. Onion-like structures obtained in the single-step process were filled, whe…

Alkylsilyl compounds as enablers of atomic layer deposition: analysis of (Et3Si)3As through the GaAs process

2016

A new chemistry has been developed to deposit GaAs, the quintessential compound semiconductor. The ALD process is based on a dechlorosilylation reaction between GaCl3 and (Et3Si)3As. Characteristic ALD growth was demonstrated, indicating good applicability of the alkylsilyl arsenide precursor. ALD of GaAs produced uniform, amorphous and stoichiometric films with low impurity content. This was done with saturating growth rates and an easily controlled film thickness. Crystallization was achieved by annealing. Even though the growth rate strongly decreased with increasing deposition temperature, good quality film growth was demonstrated at 175 to 200 °C, indicating the presence of an ALD wind…

Enhancing the luminescence efficiency of silicon-nanocrystals by interaction with H+ions

2018

The emission of silicon nanocrystals (Si-NCs), synthesized by pulsed laser ablation in water, was investigated on varying the pH of the solution. These samples emit μs decaying orange photoluminescence (PL) associated with radiative recombination of quantum-confined excitons. Time-resolved spectra reveal that both the PL intensity and the lifetime increase by a factor of ∼20 when the pH decreases from 10 to 1 thus indicating that the emission quantum efficiency increases by inhibiting nonradiative decay rates. Infrared (IR) absorption and electron paramagnetic resonance (EPR) experiments allow addressing the origin of defects on which the excitons nonradiatively recombine. The linear correl…

Investigation of photoluminescence and amplified spontaneous emission properties of cyanoacetic acid derivative (KTB) in PVK amorphous thin films

2018

This work was supported by European Regional Development Fund within the Project No. 1.1.1.1/16/A/046 and A.Riekstins SIA “Mikrotīkls” donation, administered by University of Latvia Foundation.

Anomalous and normal Hall effect in hydrogenated amorphous Si prepared by plasma enhanced chemical vapor deposition

2010

The double sign anomaly of the Hall coefficient has been studied in p -doped and n -doped hydrogenated amorphous silicon grown by plasma enhanced chemical vapor deposition and annealed up to 500 °C. Dark conductivity as a function of temperature has been measured, pointing out a conduction mechanism mostly through the extended states. Anomalous Hall effect has been observed only in the as-deposited n -doped film, disappearing after annealing at 500 °C, while p -doped samples exhibit normal Hall effect. When Hall anomaly is present, a larger optical band gap and a greater Raman peak associated with Si-H bond are measured in comparison with the cases of normal Hall effect. The Hall anomaly wi…

A neutron diffraction study of the glass transition in (KBr)0.47(KCN)0.53

1985

Abstract The molecular crystal (KBr) 0.47 (KCN) 0.53 has been investigated by elastic neutron diffraction at the transition from the paraelastic to the orientational glass state. The freezing temperature is characterized by the onset of a momentum transfer dependent broadening of the diffraction lines indicating the transition from a crystalline to an amorphous state.

Creation of glass-characteristic point defects in crystalline SiO2 by 2.5 MeV electrons and by fast neutrons

2019

The support from M -ERANET project “MyND” is acknowledged. K.K. was partially supported by the Collaborative Research Project of Laboratory for Materials and Structures, Tokyo Institute of Technology . Visiting researcher support from Ecole Polytechnique, Palaiseau is appreciated. Mr. Olivier Cavani is thanked for the expert help with irradiations.

Hydrodesulfurization cobalt-based catalysts modified by gold

2007

Cobalt catalysts supported on amorphous SiO2 and ordered mesoporous silica (MCM-41) were prepared by incipient wetness impregnation. Gold was added by consecutive impregnation or by co-impregnation. The materials were characterised by XPS, XRD and TPR techniques and evaluated in the hydrodesulfurization (HDS) of thiophene in order to investigate the effect of the noble metal on the structure and on the catalytic behaviour of the supported cobalt. Co/MCM-41 exhibited higher HDS activity and higher stability than the Co/SiO2. Moreover, in contrast to silica case, the gold impregnated MCM-41, produced an enhancement of the cobalt catalytic activity, and this is likely to be related to an incre…

Optimized bath for electroless deposition of palladium on amorphous alumina membranes

2006

A new bath for the electroless deposition of palladium on anodic alumina (AA) membranes is proposed. It was found that the optimal conditions for the uniform deposition of palladium, with minimal damage to the AA membranes, were under conditions of pH 8.4 and plating times shorter than 30 min. The deposited Pd layer was detected by X-ray diffraction (XRD) and energy dispersive X-ray (EDX) analysis. The morphology of the AA membrane before and after plating was examined by scanning electron microscopy (SEM). EDX analysis revealed that palladium was deposited only on the surfaces of the membrane and Sn ions, coming from the sensitizing bath, were incorporated into the palladium layer. EDTA in…