Search results for "Ang"
showing 10 items of 39486 documents
Oxidation resistance of Ti 3 AlC 2 and Ti 3 Al 0.8 Sn 0.2 C 2 MAX phases: A comparison
2019
Ti3AlC2 and Ti3Al0.8Sn0.2C2 MAX phase powders are densified using Spark Plasma Sintering technique to obtain dense bulk materials. Oxidation tests are then performed over the temperature range 800-1000°C under synthetic air on the two different materials in order to compare their oxidation resistance. It is demonstrated that, in the case of the Ti3Al0.8Sn0.2C2 solid solution, the oxide layers consist in TiO2, Al2O3 and SnO2. The presence of Sn atoms in
Temperature dependence of luminescence of LiF crystals doped with different metal oxides
2020
Photoluminescence and cathodoluminescence of LiF crystals doped with different binary metal oxides were measured in the wide temperature range of 50-300 K and time interval of 10−8−10−1 s after the nanosecond electron excitation pulse. Both as-grown those and crystals irradiated by an electron beam in range of absorbed dose up to 103 Gy were studied. It is shown that spectral-kinetic characteristics of the luminescence depend on the absorbed dose (type of created/accumulated color centers), the irradiation temperature, the concentration of hydroxyl, which promotes incorporation of the MeO complex (Me: W, Ti, Fe, Li) into the crystal lattice, and the cation-dopants.
Antiferromagnetic NiO thickness dependent sign of the spin Hall magnetoresistance in γ-Fe 2 O 3 /NiO/Pt epitaxial stacks
2019
We study the spin Hall magnetoresistance (SMR) in epitaxial γ–Fe2O3/NiO(001)/Pt stacks, as a function of temperature and thickness of the antiferromagnetic insulating NiO layer. Upon increasing the thickness of NiO from 0 nm to 10 nm, we detect a sign change of the SMR in the temperature range between 10 K and 280 K. This temperature dependence of the SMR in our stacks is different compared to that of previously studied yttrium iron garnet/NiO/Pt, as we do not find any peak or sign change as a function of temperature. We explain our data by a combination of spin current reflection from both the NiO/Pt and γ-Fe2O3/NiO interfaces and the thickness-dependent exchange coupling mode between the …
Experimental studies on uniaxial and echibiaxial tensile tests applied to plastic materials sheets
2019
Abstract The main objective of this paper is to determine the behavior of few plastic materials using two different type of tests. We use classical uniaxial tensile test to determine the most important mechanical and elastic characteristics, such as: yield stress, Young modulus, tangent modulus, maximum stress and maximum strain and to plot engineering stress vs. engineering strain curve for these materials. The second test, that was used in this study, was echibiaxial tensile test on the spherical punch. This test was used to determine maximum breaking force and, of course maximum displacement of specimen on punch direction and others few important characteristics, such as: major and minor…
Raman characterization of Pb2Na1−xLaxNb5−xFexO15 and Pb0.5(5−x)LaxNb5−xFexO15 (0≤x≤1) solid solutions
2011
Abstract The ferroelectric compounds Pb 2 Na 1− x La x Nb 5− x Fe x O 15 and Pb 0.5(5− x ) La x Nb 5− x Fe x O 15 (0≤ x ≤1) with the tungsten bronze type structure have been investigated using Raman spectroscopy. The evolution of the spectra as a function of composition at room temperature is reported. In the frequency range 200–1000 cm −1 three main A 1 phonons around 240 ( υ 1 ), 630 ( υ 2 ) and 816 ( υ 3 ) cm −1 were observed. The broadening of the Raman lines for high values of x originates from a significant structural disorder. This is in good agreement with the relaxor character of these compositions. The lowest-frequency part of the spectra, below 180 cm −1 , reveals a structural ch…
Atomic Layer Deposition of LiF Thin Films from Lithd, Mg(thd)2, and TiF4 Precursors
2013
Lithium fluoride is an interesting material because of its low refractive index and large band gap. Previously LiF thin films have been deposited mostly by physical methods. In this study a new way of depositing thin films of LiF using atomic layer deposition (ALD) is presented. Mg(thd)2, TiF4 and Lithd were used as precursors, and they produced crystalline LiF at a temperature range of 300–350 °C. The films were studied by UV–vis spectrometry, field emission scanning electron microscopy (FESEM), X-ray diffraction (XRD), atomic force microscopy (AFM), time-of-flight elastic recoil detection analysis (ToF-ERDA), and energy dispersive X-ray spectroscopy (EDX). In addition, film adhesion was t…
Electrical Modeling of Monolithically Integrated GMR Based Current Sensors
2018
We report on the electrical compact model, using Verilog-A, of a monolithically integrated giant magnetoresistance (GMR) based electrical current sensors. For this purpose, a specifically designed ASIC (AMS $0.35\mu \mathrm{m}$ technology) has been considered, onto which such sensors have been patterned and fabricated, following a two-steps procedure. This work is focused on the DC regime model extraction, giving evidences of its good performance and stating the bases for subsequent model improvements.
Annealing behaviour of aluminium-implanted InP
2000
The annealing behaviour of aluminium has been studied in single-crystal InP implanted with 40 and 120 keV 27Al+ ions. The implantation doses were 1 x 1015 and 1 x 1016 cm-2. The aluminium concentration profiles were determined by two techniques, Secondary ion mass spectrometry (SIMS) and the nuclear resonance broadening technique (NRB) which was used for checking purposes. The usability of the SIMS technique for profiling Al rich layers was studied. Significant inconsistencies were observed in the SIMS profiles with the high dose implanted samples. The 120 keV, 1 x 1016 cm-2 implanted samples were subject to annealing in argon atmosphere in the temperature range 380–600°C. Redistribution an…
Ion track template technology for fabrication of CdTe and CdO nanocrystals
2020
Abstract CdTe and CdO nanocrystals were synthesized by chemical deposition into a-SiO2/n-Si ion track template formed by 200 MeV Xe ion irradiation with the fluence of 108 ions/cm2. Depending on the temperature of the solution CdTe + CdO and single-phase CdO with a hexagonal crystal structure were obtained, respectively. The study of the current – voltage characteristics of the obtained structure with the single-phase CdO allows us to estimate the number of grain boundaries and the height of the potential barrier, as well as the n-type conductivity.
Comparison of the F-type center thermal annealing in heavy-ion and neutron irradiated Al2O3 single crystals
2018
Abstract The optical absorption and thermally stimulated luminescence of Al2O3 (sapphire) single crystals irradiated with swift heavy ions (SHI) 238U with energy 2.4 GeV is studied with the focus on the thermal annealing of the F-type centers in a wide temperature range of 400–1500 K. Its theoretical analysis allows us to obtain activation energies and pre-exponentials of the interstitial oxygen ion migration, which recombine with both types of immobile electron centers (F and F+ centers). A comparison of these kinetics parameters with literature data for a neutron-irradiated sapphire shows their similarity and thus supports the use of SHI-irradiation for modeling the neutron irradiation.