Search results for "Annealing"
showing 10 items of 434 documents
Observation of substitutional Fe in CEMS measurements on synthetic CVD diamond
2004
Conversion electron Mossbauer spectroscopy measurements have been made on a diamond sample synthesized by chemical vapour deposition. The sample was implanted with 70 keV 57Fe to a dose of 5 × 1014 cm−2 and Mossbauer measurements were made on the as-implanted sample and after annealing at temperatures of 600 K, 950 K and 1470 K. The spectra at the lower temperatures were characterized by broad doublets, but the annealing at 1470 K resulted in dramatic decrease in the intensity of the doublet components, and the appearance of a strong single line with an isomer shift of δ = −0.90(5) mm/s and areal intensity of 30%, and a weaker line (5%) with δ = +0.07(4). Arguments are presented to attribut…
Rare Earth Activated Oxyfluoride Glasses and Glass-Ceramics for Scintillation Applications
2012
Oxyfluoride glasses 49SiO2·6Al2O3·24Li2O·20LaF3 activated with Tb, Ce, Eu have been synthesized and studied. After heating at 580°C and 750°C crystalline phases were obtained. The samples were studied by DTA (Differential thermal analyzer), CL (cathodoluminescence), XRD (X-ray diffraction), SEM (scanning electron microscope), EDS (energy dispersive x-ray spectroscopy) methods. We found out that presence of crystalline phase enhances the CL of Tb activated samples significantly; whereas, the shortest decay time of 0.29 μs has been observed for less intense Ce doped glass sample.
Synthesis and characterization of cobalt silicide films on silicon
2006
Cobalt silicide has emerged as a leading contact material in silicon technology due to its low resistivity, high stability and small lattice mismatch. In this study, 0.2-0.4 mu m thick Co films were deposited on Si(100) wafers by RF magnetron sputtering at room temperature, and annealed at temperatures from 600 to 900 degrees C in vacuum. As-deposited and annealed samples were characterized by Rutherford backscattering spectrometry (RBS), nuclear reaction analysis (NRA), X-ray diffraction (XRD) and scanning electron microscopy (SEM). Although the Si substrates were sputter cleaned before the deposition, all the samples showed a thin oxide layer at the Si/Co interfaces. Annealing up to 700 d…
Micro-Raman analysis of the fuel-cladding interface in a high burnup PWR fuel rod
2017
International audience; New insights on the fuel-cladding bonding layer in high burnup nuclear fuel were obtained using micro-Raman spectroscopy. A specimen was specifically prepared from a fuel rod which had been irradiated to an average burnup of 56 GWd.tU-1 in a pressurized water reactor (PWR). Both inner and outer corrosion scale regions were investigated. A 10-15 et956;m thick zirconia bonding layer between fuel and cladding materials which consisted of three distinct regions was observed. Close to the fuel, tetragonal, then monoclinic zirconia was identified as the main phases. Close to the bonding layer-cladding interface, peculiar Raman signals were observed. Similar signals were ob…
Ion implantation effects in BaTiO3 single crystals
1991
Abstract Thermally controlled helium implantation has been used to produce planar waveguides in BaTiO3 without noticeable depoling effects in the samples. Profiles for the ordinary and extraordinary refractive index are deduced from optical mode measurements. No annealing procedure is required. We report the effects of different ion fluences and energies in the MeV range on the waveguide properties.
Bleaching and thermal recovery of PL emissions in natural silica
2000
Abstract We have investigated the bleaching of two photoluminescence (PL) emissions at 3.1 and 4.2 eV and the related growth of an electron spin resonance (ESR) signal, consisting in a hyperfine doublet split by 11.8 mT, in natural silica γ-irradiated by low doses, up to 1 Mrad. These observations definitely support the existence of a conversion mechanism, from optically active defects to paramagnetic ones. To further investigate this conversion process and the stability of the γ-induced paramagnetic centers, we performed PL and ESR measurements in samples that, after a γ exposure at 1 Mrad dose, were thermally treated at various temperatures ranging from 330 to 430 K. We found that the int…
Ion diffusion-controlled thermally stimulated processes in x-ray irradiated halide crystals
2003
The ionic and ion diffusion-controlled thermally stimulated relaxation (TSR) processes in CaF2, BaF2, LiBaF3 and KBr crystals were investigated above 290 K by means of the ionic conductivity, ionic thermally stimulated depolarisation current (TSDC) and thermal bleaching techniques. Under a DC field the halide crystals store large ionic space charge. We were able to detect in CaF2, BaF2, LiBaF3 and KBr in the extrinsic ionic conductivity region a series of the ionic defect (the interstitial anion and/or anion vacancies - in fluorides; the cation vacancies - in KBr) release stages: 3-6 wide and overlapping ionic TSDC peaks. The correlated data of the ionic TSDC and the F band thermal show tha…
Annealing of color centers in LiBaF 3
2002
Results of the glow rate technique to analyze the activation energy of thermostimulated annealing of X-ray created F -type color centers in LiBaF 3 crystals are presented, showing pure and containing oxygen centers. It is shown that depending on the impurity composition two alternative mechanisms are involved in the annealing of color centers. It is proposed that either the anion vacancy governed migration of F -centers resulting in recombination with complementary defects, or the thermal delocalization of radiation created fluorine ( F i ) interstitials captured by anti-structure defects followed by recombination with all kinds of complementary F -type centers are responsible for the recom…
Theoretical simulations of I-center annealing in KCl crystals
1995
Abstract This paper focus on theory of diffusion-controlled annealing of the most mobile radiation-induced defects—I centers—in KCl crystals. The kinetics of annealing of pairs of close oppositely charged defects—α-I centers (arising as a result of the tunnelling recombination of primary Frenkel defects—F and H centers) and F-I centers (when H center trap electrons) is calculated taking into account defect diffusion and Coulomb/elastic interaction. Special attention is paid to the conditions under which multi-stage annealing arises; theoretical results are compared with the relevant experimental data.
Effect of annealing on Zn1−xCoxO thin films prepared by electrodeposition
2009
Polycrystalline thin films of Zn"1"-"xCo"xO with different cobalt (Co) content were grown on indium tin oxide (ITO) substrates by cathodic electrodeposition technique and subsequently annealed in air at 400^oC. The effect of annealing in their structural, optical and chemical properties has been characterized by X-ray diffraction (XRD), energy-dispersive spectroscopy (EDS), X-ray photoelectron spectroscopy (XPS), Raman scattering and optical spectroscopy. Our measurements indicate that moderate annealing increases the crystal quality of the films. The films are highly transparent in the visible range and evidence an increase of the band gap and of the intensity of three typical Co absorptio…