Search results for "Applied Physics"
showing 10 items of 1226 documents
Effects of InAlN underlayer on deep traps detected in near-UV InGaN/GaN single quantum well light-emitting diodes
2019
Two types of near-UV light-emitting diodes (LEDs) with an InGaN/GaN single quantum well (QW) differing only in the presence or absence of an underlayer (UL) consisting of an InAlN/GaN superlattice (SL) were examined. The InAlN-based ULs were previously shown to dramatically improve internal quantum efficiency of near-UV LEDs, via a decrease in the density of deep traps responsible for nonradiative recombination in the QW region. The main differences between samples with and without UL were (a) a higher compensation of Mg acceptors in the p-GaN:Mg contact layer of the sample without UL, which correlates with the presence of traps with an activation energy of 0.06 eV in the QW region, (b) the…
A magnetostrictive generator for sensors network
2017
In this paper we present a vibration harvesting electric power generator based on magnetostrictive effect for sensors network in hazardous area and we validate it experimentally. The generator has been designed by using Dynamic Preisach hysteresis Model (DPM). DPM is a development of classical Preisach Model which is able to include dynamical features in the mathematical model of hysteresis. We measure the output power capability of the generator and we estimate its power density generation capability.
Influence of organic material and sample parameters on the surface potential in Kelvin probe measurements
2019
Financial support provided by ERDF 1.1.1.1 activity project Nr. 1.1.1.1/16/A/046 “Application assessment of novel organic materials by prototyping of photonic devices” as well as Scientific Research Project for Students and Young Researchers Nr. SJZ2016/20 realized at the Institute of Solid State Physics, University of Latvia is greatly acknowledged.
Comparison between Focused Electron/Ion Beam-Induced Deposition at Room Temperature and under Cryogenic Conditions
2019
This article belongs to the Special Issue Multi-Dimensional Direct-Write Nanofabrication.
Oxidation-Induced Changes in the ALD-Al2O3/InAs(100) Interface and Control of the Changes for Device Processing
2018
InAs crystals are emerging materials for various devices like radio frequency transistors and infrared sensors. Control of oxidation-induced changes is essential for decreasing amounts of the harmful InAs surface (or interface) defects because it is hard to avoid the energetically favored oxidation of InAs surface parts in device processing. We have characterized atomic-layer-deposition (ALD) grown Al2O3/InAs interfaces, preoxidized differently, with synchrotron hard X-ray photoelectron spectroscopy (HAXPES), low-energy electron diffraction, scanning tunneling microscopy, and time-of-flight elastic recoil detection analysis. The chemical environment and core-level shifts are clarified for w…
Heat capacity and thermal conductivity of multiferroics Bi1-xPrxFeO3
2019
The heat capacity and thermal conductivity of multiferroics Bi1–xPrxFeO3 (0 ≤ x ≤ 0.50) has been studied in the temperature range of 130–800 K. A slight substitution of praseodymium for bismuth is found to lead to a noticeable shift of the antiferromagnetic phase transition temperature whilst the heat capacity increases. The temperature dependences of the heat capacity and thermal conductivity exhibit additional anomalies during phase transitions. The experimental results suggest that the excess heat capacity can be attributed to the Schottky effect for three-level states. The basic mechanisms of the heat transfer of phonons are highlighted and the dependence of the mean free path on temper…
Surface and interface effects on the current-voltage characteristic curves of multiwall carbon nanotube-Si hybrid junctions selectively probed throug…
2021
The possibility to increase the efficiency of photovoltaic (PV) cells based on hybrid carbon nanotube (CNT)–Si heterojunctions is related to the ability to control the chemical properties of the CNT–Si interface and of the CNT bundle layer. In spite of the encouraging performances of PV cells based on multiwall (MW) CNT, so far few efforts have been made in the study of this device compared to single wall (SW) CNT–Si interfaces. Here, surface and interface effects on the current–voltage characteristic curves of MW CNT–Si hybrid junctions are investigated through exposure to HF vapors and to 10 ppm-NO2 and compared to the effects detected in SW CNT–Si junctions. Quite similar results in term…
Characterization of high-temperature performance of cesium vapor cells with anti-relaxation coating
2017
© 2017 Author(s). Vapor cells with antirelaxation coating are widely used in modern atomic physics experiments due to the coating's ability to maintain the atoms' spin polarization during wall collisions. We characterize the performance of vapor cells with different coating materials by measuring longitudinal spin relaxation and vapor density at temperatures up to 95 °C. We infer that the spin-projection-noise-limited sensitivity for atomic magnetometers with such cells improves with temperature, which demonstrates the potential of antirelaxation coated cells in applications of future high-sensitivity magnetometers.
Ammonium adsorption, desorption and recovery by acid and alkaline treated zeolite
2021
In this study, the suitability of zeolite as a possible medium for ammonium adsorption, desorption and recovery from wastewater was investigated. Specifically, batch adsorption and desorption studies with solutions enriched in NH$_4^+$ were conducted employing zeolite to evaluate how the chemical treatment and contact time affect adsorption and desorption. Several experimental tests were carried out considering both untreated and treated zeolite. Untreated and HCl-Na treated zeolite adsorbed up to 11.8 mg NH$_4^+$ g$^{-1}$ and showed the highest efficiency in recovering NH$_4^+$ from aqueous solution. Regardless of pre-treatment, treatments with NaCl resulted in higher and faster adsorption…
Creation of glass-characteristic point defects in crystalline SiO2 by 2.5 MeV electrons and by fast neutrons
2019
The support from M -ERANET project “MyND” is acknowledged. K.K. was partially supported by the Collaborative Research Project of Laboratory for Materials and Structures, Tokyo Institute of Technology . Visiting researcher support from Ecole Polytechnique, Palaiseau is appreciated. Mr. Olivier Cavani is thanked for the expert help with irradiations.