Search results for "Applied Physics"
showing 10 items of 1226 documents
Shallow and deep trap levels in X-ray irradiated β-Ga2O3: Mg
2019
Abstract The results of the investigation of thermostimulated luminescence (TSL) and photoconductivity (PC) of the X-ray irradiated undoped and Mg2+ doped β-Ga2O3 single crystals are presented. Three low-temperature peaks at 116 K, 147 K and 165 K are observed on the TSL glow curves of undoped crystals. The high-temperature TSL peaks at 354 K and 385 K are dominant in Mg2+ doped crystals. The correlation between doping with Mg2+ ions and the local energy levels of the intrinsic structural defects of β-Ga2O3, which are responsible for the TSL peaks and PC, is established. The nature of TSL peaks and the appropriate photoconductivity excitation bands are discussed.
EPR and optical spectroscopy of neutron-irradiated Gd3Ga5O12 single crystals
2020
Abstract In this paper, we have performed comparative analysis of EPR, optical absorption (OA) and luminescence spectra for a series of Gd3Ga5O12 (GGG) single crystals irradiated with fast neutrons with fluencies varied from 1016 to 1020n/cm2. In a crystal irradiated with the maximum neutron fluence, the EPR spectra demonstrated the formation of several paramagnetic defects. In particular, EPR spectrum shows a strong resonance at (effective) g ≈ 1.4 with practically isotropic behavior in the crystal rotation around the [1 1 1] direction (magnetic field being perpendicular to [1 1 1]) and several weaker lines in the g ≈ 1.1–2.6 region, which show more pronounced angular dependences. While th…
Comparison of Single Event Transients Generated at Four Pulsed-Laser Test Facilities-NRL, IMS, EADS, JPL
2012
Four pulsed-laser single-event effects systems, differing in wavelength and pulse width, were used to generate single event transients in a large-area silicon photodiode and an operational amplifier (LM124) to determine how transient amplitude and charge collection varied among the different systems. The optical wavelength and the focused spot size are the primary factors influencing the resultant charge density profile. In the large-area photodiode the transients can be distorted by high charge-injection densities that occur for tightly focused, higher energy optical pulses. When the incident laser-pulse energies are corrected for reflection losses and photon efficiency, with collection de…
Charge breeding time investigations of electron cyclotron resonance charge breeders
2018
To qualify electron cyclotron resonance charge breeders, the method that is traditionally used to evaluate the charge breeding time consists in generating a rising edge of the injected beam current and measuring the time in which the extracted multicharged ion beam reaches 90% of its final current. It is demonstrated in the present paper that charge breeding times can be more accurately measured by injecting short pulses of 1 + ions and recording the time resolved responses of N + ions. This method is used to probe the effect of the 1 + ion accumulation in the plasma known to disturb the buffer gas plasma equilibrium and is a step further in understanding the large discrepancies reported in…
Comparison of the F-type center thermal annealing in heavy-ion and neutron irradiated Al2O3 single crystals
2018
Abstract The optical absorption and thermally stimulated luminescence of Al2O3 (sapphire) single crystals irradiated with swift heavy ions (SHI) 238U with energy 2.4 GeV is studied with the focus on the thermal annealing of the F-type centers in a wide temperature range of 400–1500 K. Its theoretical analysis allows us to obtain activation energies and pre-exponentials of the interstitial oxygen ion migration, which recombine with both types of immobile electron centers (F and F+ centers). A comparison of these kinetics parameters with literature data for a neutron-irradiated sapphire shows their similarity and thus supports the use of SHI-irradiation for modeling the neutron irradiation.
Thermal annealing of radiation damage produced by swift 132Xe ions in MgO single crystals
2020
Abstract The annealing kinetics of the electron-type F+ and F color centers in highly pure MgO single crystals irradiated by 0.23-GeV 132Xe ions with fluences covering three orders of magnitude (Φ = 5 × 1011 –3.3 × 1014 ions/cm2) are studied experimentally via dependence of the optical absorption on preheating temperature. The annealing data are analyzed in terms of the diffusion-controlled bimolecular reactions between F-type centers and complementary interstitial oxygen ions. The behavior of the main kinetic parameters – the migration energies and pre-exponential factors – for different irradiation fluences is discussed and compared with that for other wide-gap binary materials from previ…
Stopping cross-section measurements of 4He in TiN1.1O0.27
2000
Abstract The stopping cross-section for 4He projectiles in TiNx compounds has been measured using the backscattering method. A multi-compound marker layer deposited between the test film and the substrate was used to obtain the stopping cross-section at several energies with one energy of the incident beam. Two RBS spectra at definite tilt angles of the sample are taken for each beam energy. The assistance of computer codes to synthesize RBS spectra is very useful to obtain the pertinent information from the displacements of the peaks of the marker layers. Stopping cross-section values are obtained with an estimated uncertainty of about 6%.
Lattice sites of diffused gold and platinum in epitaxial ZnSe layers
2000
Abstract The lattice location of diffused gold and platinum in zinc selenide (ZnSe) epitaxial layers was studied using the Rutherford backscattering (RBS) channeling technique. Thin Au and Pt films were evaporated onto ZnSe samples. The Au/ZnSe samples were annealed at 525°C and the residual Au film was removed by etching. Channeling angular scan measurements showed that about 30% of Au atoms were close to substitutional site (displaced about 0.2 A). In the case of the Pt/ZnSe samples the annealing temperatures ranged from 600°C to 800°C. The Pt minimum yields along 〈1 0 0〉 direction were close to the random value, varying from 80% to 90%. The measured Pt angular scans along 〈1 0 0〉 and 〈1 …
Radiation resistance of nanolayered silicon nitride capacitors
2020
Abstract Single-layered and multi-layered 20–60 nm thick silicon nitride (Si3N4) dielectric nanofilms were fabricated using a low-pressure chemical vapour deposition (LPCVD) method. The X-ray photoelectron spectroscopy (XPS) confirmed less oxygen content in the multi-layered nanofilms. The capacitors with Si3N4 multilayer demonstrated a tendency to a higher breakdown voltage compared to the capacitors with Si3N4 single layer. Si3N4 nanofilms and capacitors with Si3N4 dielectric were exposed to 1 kGy dose of gamma photons. Fourier transform infrared (FTIR) spectroscopy analysis showed that no modifications of the chemical bonds of Si3N4 were present after irradiation. Also, gamma irradiation…
The peculiarities of the radiation damage accumulation kinetics in the case of defect complex formation
2020
Abstract The kinetics of radiation defect accumulation under irradiation by heavy particles is theoretically analysed under the assumption of defect complex genesis, particularly, the ones of anion and cation vacancies. The obtained analytical mathematical model and revealed peculiarities of radiation dose dependencies can be used for analysis of the experimental results for different crystalline materials for solid-state electronics and photonics.