Search results for "Applied Physics"

showing 10 items of 1226 documents

A review of health assessment techniques for distribution transformers in smart distribution grids

2020

Due to the large number of distribution transformers in the distribution grid, the status of distribution transformers plays an important role in ensuring the safe and reliable operation of the these grids. To evaluate the distribution transformer health, many assessment techniques have been studied and developed. These tools will support the transformer operators in predicting the status of the distribution transformer and responding effectively. This paper will review the literature in the area, analyze the latest techniques as well as highlight the advantages and disadvantages of current methodologies.

Distribution (number theory)Computer science020209 energy02 engineering and technologyDistribution transformer01 natural scienceslcsh:Technologylcsh:Chemistry0103 physical sciences0202 electrical engineering electronic engineering information engineeringGeneral Materials Sciencedistribution transformerInstrumentationlcsh:QH301-705.5Transformer (machine learning model)010302 applied physicsFluid Flow and Transfer Processeslcsh:TProcess Chemistry and TechnologyGeneral Engineeringreal-time assessmentTransformer healthtransformer failureslcsh:QC1-999Computer Science ApplicationsReliability engineeringSettore ING-IND/33 - Sistemi Elettrici Per L'EnergiaHealth assessmentlcsh:Biology (General)lcsh:QD1-999lcsh:TA1-2040Distribution gridlcsh:Engineering (General). Civil engineering (General)lcsh:Physicstransformer failure
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A novel methodology for accelerating bitstream relocation in partially reconfigurable systems

2012

International audience; Xilinx Virtex FPGAs offer the possibility of Partial Reconfiguration (PR). Arbitrary tasks can be allocated and de-allocated onto FPGA without system interruption. However, mapping a task to any available PR region requires a unique partial bitstream for each partition, hence reducing memory storage requirements. In recent years, an interest on overcoming this problem has lead to the concept of Partial Bitstream Relocation (PBR). The principle is to perform bitstream modification to map it to different regions. However, PBR consumes scarce resources in hardware implementations, and introduces a prohibitive time overhead when done in software. In order to find the bes…

Dynamic Partial ReconfigurationComputer Networks and CommunicationsComputer scienceBitstream Relocation02 engineering and technology01 natural sciencesSoftwareArtificial Intelligence0103 physical sciences0202 electrical engineering electronic engineering information engineering[ INFO.INFO-ES ] Computer Science [cs]/Embedded SystemsBitstreamField-programmable gate arrayFPGA010302 applied physicsVirtexbusiness.industryControl reconfigurationPartition (database)020202 computer hardware & architecture[INFO.INFO-ES] Computer Science [cs]/Embedded SystemsHardware and ArchitectureEmbedded systemReconfigurable Computing[INFO.INFO-ES]Computer Science [cs]/Embedded SystemsbusinessRelocationEmbedded SystemsSoftware
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Monte Carlo simulation of high‐order harmonics generation in bulk semiconductors and submicron structures

2004

To qualify the feasibility of standard semiconductor materials and Schottky‐barrier diodes (SBDs) for THz high‐order harmonic generation and extraction, the harmonic intensity, intrinsic noise and signal‐to‐noise ratio are calculated by the Monte Carlo method when a periodic high‐frequency large‐amplitude external signal is applied to a semiconductor device. Due to very high signal‐to‐noise ratio heavily doped GaAs SBDs are found to exhibit conditions for frequency mixing and harmonic extraction that are definitively superior to those of bulk materials. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

EFFICIENCYDEVICESMaterials scienceINPMonte Carlo methodAnalytical chemistry02 engineering and technologySCHOTTKY-BARRIER DIODES01 natural sciencesNoise (electronics)NOISECondensed Matter::Materials Science0103 physical sciencesHigh harmonic generationTHZSILICONELECTRON-TRANSPORTDiode010302 applied physicsbusiness.industryGAASDopingSemiconductor device021001 nanoscience & nanotechnology[SPI.TRON]Engineering Sciences [physics]/ElectronicsHarmonicsHarmonicRADIATIONOptoelectronics0210 nano-technologybusinessphysica status solidi (c)
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Ultrabroadband single-cycle terahertz pulses with peak fields of 300 kV cm-1 from a metallic spintronic emitter

2017

To explore the capabilities of metallic spintronic thin-film stacks as a source of intense and broadband terahertz electromagnetic fields, we excite a W/CoFeB/Pt trilayer on a large-area glass substrate (diameter of 7.5 cm) by a femtosecond laser pulse (energy 5.5 mJ, duration 40 fs, wavelength 800 nm). After focusing, the emitted terahertz pulse is measured to have a duration of 230 fs, a peak field of 300 kV cm$^{-1}$ and an energy of 5 nJ. In particular, the waveform exhibits a gapless spectrum extending from 1 to 10 THz at 10% of amplitude maximum, thereby facilitating nonlinear control over matter in this difficult-to-reach frequency range and on the sub-picosecond time scale.

Electromagnetic fieldMaterials sciencePhysics and Astronomy (miscellaneous)Terahertz radiationFOS: Physical sciences02 engineering and technology53001 natural scienceslaw.inventionlaw0103 physical sciencesCommon emitter010302 applied physicsCondensed Matter - Materials Sciencebusiness.industryMaterials Science (cond-mat.mtrl-sci)021001 nanoscience & nanotechnologyLaser3. Good healthPulse (physics)WavelengthAmplitudeFemtosecondOptoelectronics0210 nano-technologybusinessOptics (physics.optics)Physics - Optics
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Si Donor Incorporation in GaN Nanowires

2015

With increasing interest in GaN based devices, the control and evaluation of doping are becoming more and more important. We have studied the structural and electrical properties of a series of Si-doped GaN nanowires (NWs) grown by molecular beam epitaxy (MBE) with a typical dimension of 2-3 μm in length and 20-200 nm in radius. In particular, high resolution energy dispersive X-ray spectroscopy (EDX) has illustrated a higher Si incorporation in NWs than that in two-dimensional (2D) layers and Si segregation at the edge of the NW with the highest doping. Moreover, direct transport measurements on single NWs have shown a controlled doping with resistivity from 10(2) to 10(-3) Ω·cm, and a car…

Electron mobilityMaterials scienceNanowireBioengineeringNanotechnology02 engineering and technology01 natural sciencesElectrical resistivity and conductivity0103 physical sciencesGeneral Materials ScienceSpectroscopyComputingMilieux_MISCELLANEOUS010302 applied physics[PHYS]Physics [physics]business.industryMechanical EngineeringDopingGeneral ChemistryRadius021001 nanoscience & nanotechnologyCondensed Matter PhysicsOptoelectronicsField-effect transistor0210 nano-technologybusinessMolecular beam epitaxy
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Ultra-fast direct growth of metallic micro- and nano-structures by focused ion beam irradiation

2019

An ultra-fast method to directly grow metallic micro- and nano-structures is introduced. It relies on a Focused Ion Beam (FIB) and a condensed layer of suitable precursor material formed on the substrate under cryogenic conditions. The technique implies cooling the substrate below the condensation temperature of the gaseous precursor material, subsequently irradiating with ions according to the wanted pattern, and posteriorly heating the substrate above the condensation temperature. Here, using W(CO)6 as the precursor material, a Ga+ FIB, and a substrate temperature of -100 °C, W-C metallic layers and nanowires with resolution down to 38 nm have been grown by Cryogenic Focused Ion Beam Indu…

Electronic properties and materialsMaterials scienceNANOTECNOLOGIANanowirelcsh:Medicine02 engineering and technologySubstrate (electronics)CRYO-FIB01 natural sciencesFocused ion beamArticle//purl.org/becyt/ford/1 [https]Electrical resistivity and conductivity0103 physical sciencesNano-Electronic devicesElectrical measurementsIrradiationlcsh:Science010302 applied physicsMultidisciplinaryNanowiresbusiness.industrylcsh:R//purl.org/becyt/ford/1.3 [https]021001 nanoscience & nanotechnologyddc:NANODEPOSITOSOptoelectronicslcsh:QFIBID0210 nano-technologybusinessLayer (electronics)Scientific Reports
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First Principles Calculations of Atomic and Electronic Structure of Ti3+Al- and Ti2+Al-Doped YAlO3

2021

M.G.B. appreciates support from the Chongqing Recruitment Program for 100 Overseas Innovative Talents (grant no. 2015013), the Program for the Foreign Experts (grant no. W2017011), Wenfeng High-end Talents Project (grant no. W2016-01) offered by the Chongqing University of Posts and Telecommunications (CQUPT), Estonian Research Council grant PUT PRG111, European Regional Development Fund (TK141), and NCN project 2018/31/B/ST4/00924. This study was supported by a grant from Latvian Research Council No. LZP-2018/1-0214 (for AIP). Institute of Solid State Physics, University of Latvia as the Center of Excellence has received funding from the European Union’s Horizon 2020 Framework Program H202…

Electronic structureMaterials scienceBand gap02 engineering and technologyElectronic structureYAlO301 natural sciencesMolecular physicsArticleIonCondensed Matter::Materials Science0103 physical sciencesAtomPhysics::Atomic and Molecular ClustersGeneral Materials ScienceAb initio modelling010302 applied physicsTi-dopantDopantYAlO<sub>3</sub>substitutional point defectsSubstitutional point defects021001 nanoscience & nanotechnologyelectronic structureChemical bondLinear combination of atomic orbitalsab initio modelling:NATURAL SCIENCES [Research Subject Categories]Density functional theory0210 nano-technology
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The composite operator method route to the 2D Hubbard model and the cuprates

2018

In this review paper, we illustrate a possible route to obtain a reliable solution of the 2D Hubbard model and an explanation for some of the unconventional behaviours of underdoped high-$T_\text{c}$ cuprate superconductors within the framework of the composite operator method. The latter is described exhaustively in its fundamental philosophy, various ingredients and robust machinery to clarify the reasons behind its successful applications to many diverse strongly correlated systems, controversial phenomenologies and puzzling materials.

Electronic structureСильно скорельованi системиHubbard modelPhysics and Astronomy (miscellaneous)Hubbard modelFOS: Physical sciencesЕлектронна структура01 natural sciencesComposite operatorПсевдощiлинаTheoretical physicsCondensed Matter - Strongly Correlated ElectronsCupratesCondensed Matter::Superconductivity0103 physical sciencesCuprateбагаточастинковi методи010306 general physicsStrongly correlated systemsКупрати010302 applied physicsPhysicsPseudogapCuprates; Electronic structure; Hubbard model; Many-body techniques; Pseudogap; Strongly correlated systems; багаточастинковi методи; Електронна структура; Купрати; Модель Хаббарда; Псевдощiлина; Сильно скорельованi системи;Strongly Correlated Electrons (cond-mat.str-el)Many-body techniquesCondensed Matter Physicslcsh:QC1-999Модель ХаббардаCondensed Matter::Strongly Correlated Electronslcsh:Physics
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Linear spectral mixture modelling to estimate vegetation amount from optical spectral data

1996

Abstract Spectral mixture modelling has developed in recent years as a suitable remote sensing tool for analysing the biophysical and compositional character of ground surfaces. In this paper the potentiality of the linear spectral mixture model to extract vegetation related parameters from 0·4-2·5 μm reflectance data has been tested. High spectral resolution reflectance measurements of soil-plant mixtures with different soil colour and plant densities were carried out in a laboratory experiment. The constrained least-squares and the factor analysis unmixing procedures were applied to generate endmember fractions of the components present in the mixtures and to test the validity of the mode…

EndmemberApplied physicsLinear modelGeneral Earth and Planetary SciencesEnvironmental scienceVegetationSpectral resolutionMixture modelMultispectral ScannerMultispectral pattern recognitionRemote sensingInternational Journal of Remote Sensing
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On the impact of within-die process variation in GALS-Based NoC Performance

2012

[EN] Current integration scales allow designing chip multiprocessors (CMP), where cores are interconnected by means of a network-on-chip (NoC). Unfortunately, the small feature size of current integration scales causes some unpredictability in manufactured devices because of process variation. In NoCs, variability may affect links and routers causing them not to match the parameters established at design time. In this paper, we first analyze the way that manufacturing deviations affect the components of a NoC by applying a new comprehensive and detailed within-die variability model to 200 instances of an 8¿8 mesh NoC synthesized using 45 nm technology. Later, we show that GALS-based NoCs pr…

Engineering02 engineering and technology01 natural sciencesExecution timeDie (integrated circuit)Networks-on-chipReduction (complexity)0103 physical sciencesSynchronization (computer science)0202 electrical engineering electronic engineering information engineeringGALSElectrical and Electronic Engineering010302 applied physicsbusiness.industryChipComputer Graphics and Computer-Aided Design020202 computer hardware & architectureProcess variationARQUITECTURA Y TECNOLOGIA DE COMPUTADORESProcess variationNetwork on a chipLogic gateEmbedded systembusinessSoftware
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