Search results for "Applied Physics"
showing 10 items of 1226 documents
Structure formation and properties of corundum ceramics based on metastable aluminium oxide doped with stabilized zirconium dioxide
2021
Abstract The work presents a successful example of the use of YSZ binary systems for production of composite ceramic materials based on θ-Al2O3 with improved physical and mechanical characteristics which was previously considered an unpromising material. It was first obtained result of extreme nature of dependence of physical and mechanical properties of Al2O3+YSZ on the concentration of YSZ (ZrO2–3mol% of Y2O3) additive. The sintering temperature was decreased on 250 °C (from 1800 to 1550 °C). The phase composition of powders and the structure of ceramics of the Al2O3 + YSZ system were investigated depending on the amount of YSZ dopant, the structure-properties relationship was established…
Effects of CuO doping on structure, microstructure and dielectric properties of BaTiO3–PbTiO3 solid solution
2019
Ba0.7Pb0.3TiO3 and Ba0.7Pb0.3TiO3+yCuO (y = 0.1 wt%, 0.5 wt%, 1 wt% and 3 wt%) samples were prepared by a solid state reaction method. High purity raw materials were used. Structural properties of the sintered pellets were studied by X-ray diffractometer X’Pert PRO (PANalytical). A single phase of perovskite structure with tetragonal phase was identified at room temperature. The surface morphology of the obtained specimens was characterized by the scanning electron microscopy (Hitachi S4700). The investigations has shown that the synthesized ceramic materials are characterized by the high density, homogeneity of microstructure and low porosity. Dielectric spectroscopy was used to study the …
Impact of pump wavelength on terahertz emission of a cavity-enhanced spintronic trilayer
2018
We systematically study the pump-wavelength dependence of terahertz pulse generation in thin-film spintronic THz emitters composed of a ferromagnetic Fe layer between adjacent nonmagnetic W and Pt layers. We find that the efficiency of THz generation is essentially at for excitation by 150 fs pulses with center wavelengths ranging from 900 to 1500 nm, demonstrating that the spin current does not depend strongly on the pump photon energy. We show that the inclusion of dielectric overlayers of TiO2 and SiO2, designed for a particular excitation wavelength, can enhance the terahertz emission by a factor of of up to two in field.
Transmission Attenuation Power Ratio Analysis of Flexible Electromagnetic Absorber Sheets Combined with a Metal Layer.
2018
Electromagnetic noise absorber sheets have become a solution for solving complex electromagnetic interference (EMI) problems due to their high magnetic losses. This contribution is focused on characterizing a novel structure that is based on an absorber film with a metal layer attached on its top side. Two different absorber compositions were combined with Al and Cu metal layers in order to study the improvement on the performance of these structures, depending on the complex permeability, absorber film thickness, and type of metal. The transmission attenuation power ratio of the absorber films is analyzed and compared to the performance of absorber and metal structures. The measurement pro…
Unstable behaviour of normally-off GaN E-HEMT under short-circuit
2018
The short-circuit capability of power switching devices plays an important role in fault detection and the protection of power circuits. In this work, an experimental study on the short-circuit (SC) capability of commercial 600 V Gallium Nitride enhancement-mode high-electron-mobility transistors (E-HEMT) is presented. A different failure mechanism has been identified for commercial p-doped GaN gate (p-GaN) HEMT and metal-insulator-semiconductor (MIS) HEMT. In addition to the well known thermal breakdown, a premature breakdown is shown on both GaN HEMTs, triggered by hot electron trapping at the surface, which demonstrates that current commercial GaN HEMTs has requirements for improving the…
Angle resolved X-ray photoemission spectroscopy double layer model for in situ characterization of metal organic chemical vapour deposition nanometri…
2007
International audience; In situ Angle Resolved X-ray Photoemission Spectroscopy (ARXPS) characterizations of TiO2 thin films grown on silicon by Metal Organic Chemical Vapour Deposition were performed in order to get information on interfacial reactions at the first stages of the growth, one of the aims being to understand the influence of deposition conditions. Thickness measurements were also carried out from ARXPS analyses. As the real structure of the films was shown to be a double layer system such as TiO2/SiO2/Si, an ARXPS model of thickness and surface coverage determination was applied to each layer independently. However, the application of this model to very thin films underestima…
On the possibility of synthesizing multilayered coatings in the (Ti,Al)N system by RGPP: A microstructural study
2019
International audience; Radiofrequency magnetron sputtering combined with reactive gas pulsing process was used to synthesize two titanium aluminum nitride multilayer films using a periodically controlled nitrogen flow rate changing from 0.4 to 1 sccm (sample S04-1) and from 0 to 1 sccm (sample S0-1). A metallic TiAl buffer layer was deposited on the etched substrates before the deposition to enhance their adhesion. The films were characterized using mainly transmission electron microscopy and electron diffraction. The role of the crystallinity of the buffer TiAl metallic layer deposited before gas introduction on the growth orientations is emphasized. It is shown that the formation of a mu…
Structural and electrical properties of magnetron sputtered Ti(ON) thin films:The case of TiN doped in situ with oxygen.
2009
International audience; Incorporation of oxygen into TiN lattice results in formation of titanium oxynitrides, TiOxNy that have become particularly interesting for photocatalytic applications. Elaboration as well as characterization of TiN and in situ oxygen-doped thin films is the subject of this paper. Thin films, 250–320nm in thickness, have been deposited by dc-pulsed magnetron reactive sputtering from Ti target under controllable gas flows of Ar, N2 and O2. Optical monitoring of Ti plasma emission line at = 500nm has been implemented in order to stabilize the sputtering rate. Scanning electron microscopy (SEM), X-ray diffraction in grazing incidence (GIXRD), micro-Raman spectroscopy, X…
XPS and SIMS study of aluminium native oxide modifications induced by Q-switched Nd:YAG laser treatment
2006
Publié suite au congrès ECASIA: 11th European Conference on Applications of Surface and Interface Analysis, 25-30 September 2005, Vienna, Austria; International audience; During laser cleaning of aluminium in ambient atmosphere, modifications of the metal surface can be induced by transient thermal effects. This work aims to characterize the modification of the aluminium oxide layer on pure aluminium for a wide range of power per area using a Q-switched Nd :YAG (1064 nm) laser with two pulse durations, 10 and 180 ns. Experiments were carried out with single laser shots in ambient air at fluences (e.g. energy per area) below the ablation regime. For 10-ns pulses with fluences between 0.7 and…
Investigation and modeling of the anomalous yield point phenomenon in pure tantalum
2014
International audience; The monotonic and cyclic behavior of commercially pure tantalum has been investigated at room temperature, in order to capture and understand the occurrence of the anomalous yield point phenomenon. Interrupted tests have been performed, with strain reversals (tensile or compressive loading) after an aging period. The stress drop is attributed to the interactions between dislocations and solute atoms (oxygen) and its macroscopic occurrence is not systematically observed. InfraRed Thermography (IRT) measurements supported by Scanning Electron Microscopy (SEM) pictures of the polished gauge length of a specimen during an interrupted tensile test reveal the nucleation an…