Search results for "BAND"
showing 10 items of 2610 documents
Detailed photoluminescence study of vapor deposited Bi2S3 films of different surface morphology
2014
authorenWe present a temperature- and intensity-dependent photoluminescence (PL) study of the binary semiconductor on the mm-scale and a laterally resolved PL measurement with a resolution of nm. The films can show a rather rough surface with needles and flakes of with different orientations as well as very flat and smooth surface morphology. Despite a band gap of eV the films show a splitting of quasi-Fermi levels (QFL) of meV at room temperature. By means of temperature-dependent PL we have located several radiative and non-radiative defect states in the band gap. For a better understanding of this thin film semiconductor a full analysis of the laterally resolved PL measurement including …
Role of Self-Absorption in the Photoluminescence Waveguided along CsPbBr3 Perovskite Nanocrystals Thin Films
2020
During the last years, perovskite nanocrystals (PNCs) have been intensively studied as nanomaterials with excellent light absorption/emission properties. For example, PNCs have been successfully applied in solar cells, where the high absorption coefficient above the band gap increases the conversion efficiencies; or in optical sources, where the high quantum yield of emission at room temperature allows a low threshold of stimulated emission. In this scenario, an optical waveguide represents a suitable platform to enhance their electrooptical properties and to integrate different photonic functionalities. However, propagation of light along close packed films of PNCs is usually restricted to…
Structural and luminescence properties of GaN nanowires grown using cobalt phthalocyanine as catalyst
2015
Catalyst free methods have usually been employed to avoid any catalyst induced contamination for the synthesis of GaN nanowires with better transport and optical properties. Here, we have used a catalytic route to grow GaN nanowires, which show good optical quality. Structural and luminescence properties of GaN nanowires grown by vapor-liquid-solid technique using cobalt phthalocyanine as catalyst are systematically investigated as a function of various growth parameters such as the growth temperature and III/V ratio. The study reveals that most of the nanowires, which are several tens of microns long, grow along [101¯0] direction. Interestingly, the average wire diameter has been found to …
Infrared photoluminescence of preexisting or irradiation-induced interstitial oxygen molecules in glassySiO2and α-quartz
1998
A sensitive technique for detecting interstitial ${\mathrm{O}}_{2}$ molecules in ${\mathrm{SiO}}_{2}$ is demonstrated by measuring their infrared $\stackrel{\ensuremath{\rightarrow}}{a}X$ luminescence at 1272.2 nm under a Ti-sapphire laser excitation into the ${\mathrm{O}}_{2}\stackrel{\ensuremath{\rightarrow}}{X}b$ absorption band at 765 nm. Contrary to the case of ${\mathrm{O}}_{2}$ trapped in inert gas matrices, the visible emission of ${\mathrm{O}}_{2}$ corresponding to the direct $\stackrel{\ensuremath{\rightarrow}}{b}X$ transition is not found. Examination of different neutron- and gamma-irradiated glassy ${\mathrm{SiO}}_{2}$ and \ensuremath{\alpha}-quartz samples reveals radiation-in…
Enhanced photorefractive properties of Bi-doped Sn2P2S6
2008
International audience; Enhanced photorefractive properties of tin hypothiodiphosphate (Sn2P2S6) crystals as a result of Bi doping are presented. These new crystals were obtained by the vapor-transport technique using stoichiometric Sn2P2S6 composition with an additional amount of Bi up to 0.5 mol. % in the initial compound. The bandgap edges of the obtained crystals are located at ~750 nm and shift toward the red wavelengths with increasing Bi concentration. Sn2P2S6:Bi crystals are found to exhibit larger two-beam coupling gain coefficients (up to 17 cm−1 at a wavelength of 854 nm) as compared to (i) pure Sn2P2S6 (2.5 cm−1 at 854 nm), (ii) Sn2P2S6 crystals modified by the growth conditions…
Electronic structure of delta-doped $La:SrTiO_{3}$ layers by hard X-ray photoelectron spectroscopy
2012
We have employed hard x-ray photoemission (HAXPES) to study a delta-doped SrTiO3 layer that consisted of a 3-nm thickness of La-doped SrTiO3 with 6% La embedded in a SrTiO3 film. Results are compared to a thick, uniformily doped La:SrTiO3 layer. We find no indication of a band offset for the delta-doped layer, but evidence of the presence of Ti3+ in both the thick sample and the delta-layer, and indications of a density of states increase near the Fermi energy in the delta-doped layer. These results further demonstrate that HAXPES is a powerful tool for the non-destructive investigation of deeply buried doped layers.
First-principles LCAO study of the low and room temperature phases of CdPS$_3$
2020
A.K. is grateful to the Latvian Council of Science project no. lzp-2018/2-0353 for financial support. Institute of Solid State Physics, University of Latvia as the Center of Excellence has received funding from the European Union’s Horizon 2020 Framework Programme H2020-WIDESPREAD-01-2016-2017-TeamingPhase2 under grant agreement No. 739508, project CAMART2.
Dual-broadband rotational CARS modelling of nitrogen at pressures up to 9 MPa. II. Rotational Raman line widths
2002
International audience; Rotational coherent anti-Stokes Raman spectroscopy (CARS) is a well-established spectroscopic technique for thermometry at pre-combustion temperatures an atmospheric pressure. However, at pressures of several MPa, a previous investigation revealed large discrepancies between experimental data and the theoretical model. A re-evaluation has been made of these data (at room temperature and in the range 1.5-9 MPa) with two improvements to the spectral code. The first is the inclusion of an inter-branch interference effect, which is described in detail in Paper I. The second is the use of experimental S-1-branch Raman line widths measured at 295 K, with a temperature depe…
Detailed balance analysis of area de-coupled double tandem photovoltaic modules
2015
Published version of an article in the journal: Applied Physics Letters. Also available from the publisher at: http://dx.doi.org/10.1063/1.4906602 This paper describes how layers of area de-coupled top and bottom cells in photovoltaic tandem modules can increase the efficiency of two-terminal tandem devices. The point of the area de-coupling is to allow the number of top cells to differ from the number of bottom cells. Within each of the layers, the cells can be horizontally series-connected and the layers can then be currentor voltage-matched with each other in a tandem module. Using detailed balance modeling, it is shown that two-terminal tandem modules of this type can achieve the same t…
Antenna-coupled spintronic terahertz emitters driven by a 1550 nm femtosecond laser oscillator
2019
We demonstrate antenna-coupled spintronic terahertz (THz) emitters excited by 1550 nm, 90 fs laser pulses. Antennas are employed to optimize THz outcoupling and frequency coverage of ferromagnetic/nonmagnetic metallic spintronic structures. We directly compare the antenna-coupled devices to those without antennas. Using a 200 μm H-dipole antenna and an ErAs:InGaAs photoconductive receiver, we obtain a 2.42-fold larger THz peak-peak signal, a bandwidth of 4.5 THz, and an increase in the peak dynamic range (DNR) from 53 dB to 65 dB. A 25 μm slotline antenna offered 5 dB larger peak DNR and a bandwidth of 5 THz. For all measurements, we use a comparatively low laser power of 45 mW from a comme…