Search results for "BAND"
showing 10 items of 2610 documents
Electronic structure of poly(p-(disilanylene)phenylene)
1996
Abstract We present the geometrical and electronic structures of several isomers of poly(p-(disilanylene)phenylene), The structural analysis, performed at the 3-21G* level, shows that the isomers with the phenylene group perpendicular to the silicon backbone are the more stable conformations, displaying almost the same energy. The electronic properties, as obtained from the valence-effective Hamiltonian (VEH) band structure calculations, strongly depend on the disposition of the phenylene group into the polymeric backbone. The VEH predicts a wide and asymmetric absorption band in excellent agreement with UV experimental data.
Carrier dynamics in epilayers and nanocolumns of ternary AlGaN with a tunable bandgap
2012
We apply several optical time-resolved techniques to investigate the dynamics of excess carriers in AlxGa1−xN nanocolumns grown on (111) silicon substrates and in thick AlxGa1−xN epitaxial layers deposited on sapphire. We demonstrate that carrier lifetime drops in nanocolumns by several times if compared to epilayers with similar Al content; in addition, recombination rate displays a strong nonlinearity on excitation. On the other hand, carrier localization effects observed in the epilayers completely disappear in nanocolumns.
Silicon nitride-based deep sub-λ slit for ultra-broadband THz coherent detection
2018
We report on the characterization of a new type of CMOS-compatible device for terahertz solid-state biased coherent detection, which relies on a 1-µm-wide metallic slit embedded in a thin film of PECVD-grown silicon nitride.
Efficiency comparison between SiC- and Si-based active neutral-point clamped converters
2015
This paper presents an efficiency comparison between silicon-carbide technology and silicon technology. In order to achieve this, the efficiency of an active neutral-point clamped converter built up with silicon carbide power-devices is compared with the efficiency of an active neutral-point clamped converter built up with silicon power-devices, under a particular operating mode and a particular selection of devices. Firstly, overall losses of both converters are estimated. Then, experimental tests are carried out to measure their overall losses and efficiency. Finally, experimental results are compared with the estimations to support the analysis. The efficiency of the SiC converter is hig…
First-principles study of bulk and surface oxygen vacancies in SrTiO3 crystal
2009
The structural and electronic properties of the neutral and positively charged oxygen vacancies (F and F + centres) in the bulk and on the (001) surfaces of SrTiO3 crystal are examined within the hybrid Hartree-Fock and density functional theory (HF-DFT) method based upon the linear combination of atomic orbital (LCAO) approach. A comparison of the formation energy for surface and bulk defects indicates a perceptible propensity for the segregation of neutral and charged vacancies to both SrO and TiO2 surface terminations with a preference in the latter case which is important for interpretation of space charge effects at ceramic interfaces. It is found that the vacancies reveal more shallow…
Modelling and analysis of the influence of solar spectrum on the efficiency of photovoltaic modules
2021
Abstract The article presents the influence of changes in the solar radiation spectrum distribution on the properties of various photovoltaic modules, with particular emphasis on the scattered component. We compared the relative efficiency of the photovoltaic modules based on various semiconductor absorbers during bright and sunny, and cloudy summer days. Additionally, we presented the impact of the module tilt angle on the magnitude of the surface incident scattered component and on the efficiency of the module. The solar spectra for various weather conditions were estimated using specialised computer programmes,such as SolarSpectrum or SMARTS2, and we present here the validation results f…
High Resolution X-Ray Spectroscopy with Compound Semiconductor Detectors and Digital Pulse Processing Systems
2012
The advent of semiconductor detectors has revolutionized the broad field of X-ray spectroscopy. Semiconductor detectors, originally developed for particle physics, are now widely used for X-ray spectroscopy in a large variety of fields, as X-ray fluorescence analysis, X-ray astronomy and diagnostic medicine. The success of semiconductor detectors is due to several unique properties that are not available with other types of detectors: the excellent energy resolution, the high detection efficiency and the possibility of development of compact detection systems. Among the semiconductors, silicon (Si) detectors are the key detectors in the soft X-ray band (15 keV) and will continue to be the c…
Generation of broadband THz transients via metallic spintronic emitters driven by 20-fs pulses at 1030 nm
2020
We explore power and bandwidth scaling for the generation of highly-temporally-confined THz transients from spintronic emitters, driven by the 250-fs and 20-fs pulses of a high-power 28-MHz Yb-based laser, spectrally centered at 1030 nm.
Structural, electrical and optical characteristics of Al-doped zinc oxide thin films deposited by reactive magnetron sputtering
2013
ZnO:Al (AZO) thin films on glass were deposited by DC reactive magnetron sputtering at approximately 300°C substrate temperature. Structural, electrical and optical properties were investigated as a function of oxygen flow. XRD data shows that AZO thin films are polycrystalline with pronounced c-axis orientation and the grain size increasing with the oxygen flow. The lowest achieved resistivity within the deposited set of samples was 7.6·10 -4 Ωcm. The transmittance of AZO films was above 80 % at 550 nm with the optical band gap between 3.4 and 3.8 eV.
A simulation and experimental study of electrochemical pH control at gold interdigitated electrode arrays
2021
Abstract In electroanalysis, solution pH is a critical parameter that often needs to be tailored and controlled for the detection of particular analytes. This is most commonly performed by the addition of chemicals, such as strong acids or bases. Electrochemical in-situ pH control offers the possibility for the local adjustment of pH at the point of detection, without the need for additional reagents. Finite element analysis (FEA) simulations have been performed on interdigitated electrodes, to guide experimental design in relation to both electroanalysis and in-situ control of solution pH. No previous model exists that describes the generation of protons at an interdigitated electrode arra…