Search results for "Be"
showing 10 items of 68243 documents
Quasi-parallel precession diffraction: Alignment method for scanning transmission electron microscopes.
2018
Abstract A general method to set illuminating conditions for selectable beam convergence and probe size is presented in this work for Transmission Electron Microscopes (TEM) fitted with µs/pixel fast beam scanning control, (S)TEM, and an annular dark field detector. The case of interest of beam convergence and probe size, which enables diffraction pattern indexation, is then used as a starting point in this work to add 100 Hz precession to the beam while imaging the specimen at a fast rate and keeping the projector system in diffraction mode. The described systematic alignment method for the adjustment of beam precession on the specimen plane while scanning at fast rates is mainly based on …
Early detection and classification of bearing faults using support vector machine algorithm
2017
Bearings are one of the most critical elements in rotating machinery systems. Bearing faults are the main reason for failures in electrical motors and generators. Therefore, early bearing fault detection is very important to prevent critical system failures in the industry. In this paper, the support vector machine algorithm is used for early detection and classification of bearing faults. Both time and frequency domain features are used for training the support vector machine learning algorithm. The trained classier can be employed for real-time bearing fault detection and classification. By using the proposed method, the bearing faults can be detected at early stages, and the machine oper…
Enabling partially reconfigurable IP cores parameterisation and integration using MARTE and IP-XACT
2012
International audience; This paper presents a framework which facilitates the parameterization and integration of IP cores into partially reconfigurable SoC platforms, departing from a high-level of abstraction. The approach is based in a Model-Driven Engineering (MDE) methodology, which exploits two widely used standards for Systems-on-Chip specification, MARTE and IP-XACT. The presented work deals with the deployment level of the MDE approach, in which the abstract components of the platform are first linked to the lower level IP-XACT counterparts. At this phase, information for parameterization and integration is readily available, and a synthesizable model can be obtained from the gener…
Optical properties of InN nanocolumns: Electron accumulation at InN non‐polar surfaces and dependence on the growth conditions
2009
InN nanocolumns grown by plasma-assisted molecular beam epitaxy have been studied by photoluminescence (PL) and photoluminescence excitation (PLE). The PL peak energy was red-shifted with respect to the PLE onset and both energies were higher than the low temperature band-gap reported for InN. PL and PLE experiments for different excitation and detection energies indicated that the PL peaks were homogeneously broadened. This overall phenomenology has been attributed to the effects of an electron accumulation layer present atthe non-polar surfaces of the InN nanocolumns. Variations in the growth conditions modify the edge of the PLE spectra and the PL peak energies evidencing that the densit…
Multi-application Based Fault-Tolerant Network-on-Chip Design for Mesh Topology Using Reconfigurable Architecture
2019
In this paper, we propose a two-step fault-tolerant approach to address the faults occurred in cores. In the first stage, a Particle Swarm Optimization (PSO) based approach has been proposed for the fault-tolerant mapping of multiple applications on to the mesh based reconfigurable architecture by introducing spare cores and a heuristic has been proposed for the reconfiguration in the second stage. The proposed approach has been experimented by taking several benchmark applications into consideration. Communication cost comparisons have been carried out by taking the failed cores as user input and the experimental results show that our approach could get improvements in terms of communicati…
Injected 1+ ion beam as a diagnostics tool of charge breeder ECR ion source plasmas
2015
International audience; Charge breeder electron cyclotron resonance ion sources (CB-ECRIS) are used as 1+ →n+ charge multiplication devices of post-accelerated radioactive ion beams. The charge breeding process involves thermalization of the injected 1+ ions with the plasma ions in ion–ion collisions, subsequent ionization by electron impact and extraction of the n+ ions. Charge breeding experiments of 85Rb and 133Cs ion beams with the 14.5 GHz PHOENIX CB-ECRIS operating with oxygen gas demonstrate the plasma diagnostics capabilities of the 1+ injection method. Two populations can be distinguished in the m/q-spectrum of the extracted ion beams, the low (1+ and 2+) charge states repres…
Silicon Surface Passivation by ALD-Ga2O3: Thermal vs. Plasma-Enhanced Atomic Layer Deposition
2020
Silicon surface passivation by gallium oxide (Ga2O3) thin films deposited by thermal- and plasma-enhanced atomic layer deposition (ALD) over a broad temperature range from 75 °C to 350 °C is investigated. In addition, the role of oxidant (O3 or O-plasma) pulse lengths insufficient for saturated ALD-growth is studied. The material properties are analyzed including the quantification of the incorporated hydrogen. We find that oxidant dose pulses insufficient for saturation provide for both ALD methods generally better surface passivation. Furthermore, different Si surface pretreatments are compared (HF-last, chemically grown oxide, and thermal tunnel oxide). In contrast to previous reports, t…
Determination of Contact Potential Difference by the Kelvin Probe (Part II) 2. Measurement System by Involving the Composite Bucking Voltage
2016
Abstract The present research is devoted to creation of a new low-cost miniaturised measurement system for determination of potential difference in real time and with high measurement resolution. Furthermore, using the electrode of the reference probe, Kelvin method leads to both an indirect measurement of electronic work function or contact potential of the sample and measurement of a surface potential for insulator type samples. The bucking voltage in this system is composite and comprises a periodically variable component. The necessary steps for development of signal processing and tracking are described in detail.
Polarity conversion of GaN nanowires grown by plasma-assisted molecular beam epitaxy
2019
International audience; It is demonstrated that the N-polarity of GaN nanowires (NWs) spontaneously nucleated on Si (111) by molecular beam epitaxy can be reversed by intercalation of an Al-or Ga-oxynitride thin layer. The polarity change has been assessed by a combination of chemical etching, Kelvin probe force microscopy, cathodo-and photoluminescence spectroscopy and transmission electron microscopy experiments. Cathodoluminescence of the Ga-polar NW section exhibits a higher intensity in the band edge region, consistent with a reduced incorporation of chemical impurities. The polarity reversal method we propose opens the path to the integration of optimized metal-polar NW devices on any…
Object size effect on the contact potential difference measured by scanning Kelvin probe method
2010
International audience; Contact potential difference (CPD) was measured by macroscopic Kelvin probe instrument and scanning Kelvin probe microscope on Al, Ni and Pt on ITO substrates at ambient conditions. CPD values measured by scanning Kelvin probe microscope and macroscopic Kelvin probe are close within the error of about 10-30% for large studied objects, whereas scanning Kelvin probe microscope signal decreases, when the object size becomes smaller than 1.4 m. CPD and electric field signals measured using many-pass technique allowed us to estimate the influence of electrostatic field disturbance, especially, in the case of small objects.