Search results for "Biasing"
showing 10 items of 69 documents
Millisecond radiative recombination in poly(phenylene vinylene)-based light-emitting diodes from transient electroluminescence
2007
The current and electroluminescence transient responses of standard poly phenylene vinylene -based light-emitting devices have been investigated. The electroluminescence time response is longer milliseconds scale than the current switch-off time by more than one order of magnitude, in the case of small area devices 0.1 cm2 . For large area devices 6 cm2 the electroluminescence decay time decreases from 1.45 ms to 100 s with increasing bias voltage. The fast current decay limits the electroluminescence decay at higher voltages. Several approaches are discussed to interpret the observed slow decrease of electroluminescence after turning off the bias. One relies upon the Langevin-type bimolecu…
Temperature and bias-voltage dependence of atomic-layer-deposited HfO2-based magnetic tunnel junctions
2014
Magnetic tunnel junctions with HfO2 tunnel barriers were prepared through a combination of magnetron sputtering and atomic layer deposition. We investigated the tunneling transport behavior, including the tunnel magnetoresistance ratio and the current-voltage characteristics between room temperature and 2 K. Here, we achieved a tunneling magneto resistance ratio of 10.3% at room temperature and 19.3% at 2 K. Furthermore, we studied the bias-voltage and temperature dependencies and compared the results with those of commonly used alumina- and magnesia-based magnetic tunnel junctions. We observed a polycrystalline/amorphous electrode-barrier system via high-resolution transmission electron mi…
Effect of DC Electric Field on the Emitted THz Signal of Antenna-Coupled Spintronic Emitters
2019
We study the impact of an external electric DC field on antenna-coupled spintronic THz emitters driven by a 90 fs, 1550 nm laser oscillator. Simultaneous application of external electric and magnetic field shows a quadratic decrease in peak-peak THz pulse with increase in the bias voltage. We ascribe this decrease to Joule heating caused by the DC current flowing through the spintronic material.
Wide Temperature Operation of 40-Gb/s 1550-nm Electroabsorption Modulated Lasers
2006
Electroabsorption modulated lasers (EMLs) exploiting the quantum confined Stark effect need thermoelectric coolers to achieve stable output power levels and dynamic extinction ratios. Temperature-independent operation is reported between 20/spl deg/C and 70/spl deg/C for InGaAlAs-InP-based monolithically integrated 1550-nm EMLs exploiting a shared active area at 40 Gb/s by actively controlling the electroabsorption modulator bias voltage. Dynamic extinction ratios of at least 8 dB and fiber-coupled mean modulated optical power of at least 0.85 mW are obtained over the mentioned temperature range.
Feedback Biasing Based Adjustable Gain Ultrasound Preamplifier for CMUTs in 45nm CMOS
2018
As CMOS technology is scaled down, supply voltages are decreasing and intrinsic gain of the nanoscale CMOS transistors is dropping while the threshold voltages of transistors are remaining relatively constant. In such scaled down nanoscale CMOS technologies, conventional vertical stacking architectures (for example. cascode architectures) for high-gain becomes no more attractive. In this paper we present the analysis and design of a feedback biasing based adjustable gain ultrasound preamplifier which is capable of amplifying signals from 15 MHz to 45 MHz from Capacitive Micromachined Ultrasound Transducers (CMUTs) in 45nm CMOS technology for medical ultrasound imaging applications. From the…
Low-Power consumption Franz-Keldysh effect plasmonic modulator
2014
In this paper we report on a low energy consumption CMOS-compatible plasmonic modulator based on Franz-Keldysh effect in germanium on silicon. We performed integrated electro-optical simulations in order to optimize the main characteristics of the modulator. A 3.3 $dB$ extinction ratio for a 30 ${\mu}m$ long modulator is demonstrated under 3 $V$ bias voltage at an operation wavelength of 1647 $nm$. The estimated energy consumption is as low as 20 $fJ/bit$.
Electrostatic control of the photoisomerization efficiency and optical properties in visual pigments: on the role of counterion quenching.
2009
Hybrid QM(CASPT2//CASSCF/6-31G*)/MM(Amber) computations have been used to map the photoisomerization path of the retinal chromophore in Rhodopsin and explore the reasons behind the photoactivity efficiency and spectral control in the visual pigments. It is shown that while the electrostatic environment plays a central role in properly tuning the optical properties of the chromophore, it is also critical in biasing the ultrafast photochemical event: it controls the slope of the photoisomerization channel as well as the accessibility of the S(1)/S(0) crossing space triggering the ultrafast decay. The roles of the E113 counterion, the E181 residue, and the other amino acids of the protein pock…
Mapping of local conductivity variations on fragile nanopillar arrays by scanning conductive torsion mode microscopy.
2010
A gentle method that combines torsion mode topography imaging with conductive scanning force microscopy is presented. By applying an electrical bias voltage between tip and sample surface, changes in the local sample conductivity can be mapped. The topography and local conductivity variations on fragile free-standing nanopillar arrays were investigated. These samples were fabricated by an anodized aluminum oxide template process using a thermally cross-linked triphenylamine-derivate semicondcutor. The nanoscale characterization method is shown to be nondestructive. Individual nanopillars were clearly resolved in topography and current images that were recorded simultaneously. Local current−…
Electric field manipulation in Al/CdTe/Pt detectors under optical perturbations
2017
Abstract Al/CdTe/Pt detectors are very attractive devices for high-resolution X-ray spectroscopy, even though they suffer from polarization phenomena, which cause a progressive time degradation of the spectroscopic performance. In this work we investigated on the time dependence of the electric field of an Al/CdTe/Pt detector under optical perturbation by means of Pockels effect measurements. A tunable laser with wavelengths ranging within 700−1000 nm and a 940 nm light emitting diode (LED) were used. The measurements of both the electric field profile and the total current were used to better understand the effects of the optical perturbation on polarization phenomena. The results point ou…
Electrical properties of Au/CdZnTe/Au detectors grown by the boron oxide encapsulated Vertical Bridgman technique
2016
Abstract In this work we report on the results of electrical characterization of new CdZnTe detectors grown by the Boron oxide encapsulated Vertical Bridgman technique (B-VB), currently produced at IMEM-CNR (Parma, Italy). The detectors, with gold electroless contacts, have different thicknesses (1 and 2.5 mm) and the same electrode layout, characterized by a central anode surrounded by a guard-ring electrode. Investigations on the charge transport mechanisms and the electrical contact properties, through the modeling of the measured current–voltage ( I – V ) curves, were performed. Generally, the detectors are characterized by low leakage currents at high bias voltages even at room tempera…