Search results for "Biasing"
showing 10 items of 69 documents
Turnstile behaviour of the Cooper-pair pump
2003
We have experimentally studied the behaviour of the so-called Cooper pair pump (CPP) with three Josephson junctions, in the limit of small Josephson coupling EJ < EC. These experiments show that the CPP can be operated as a traditional turnstile device yielding a gate-induced current 2ef in the direction of the bias voltage, by applying an RF-signal with frequency f to the two gates in phase, while residing at the degeneracy node of the gate plane. Accuracy of the CPP during this kind of operation was about 3% and the fundamental Landau-Zener limit was observed to lie above 20 MHz. We have also measured the current pumped through the array by rotating around the degeneracy node in the ga…
Results of the 1999 H8 beam tests of ATLAS-SCT prototypes
2001
Abstract During the August–September 1999 test beam in H8 at CERN three half-modules, equipped with different types of fast binary Front End electronics, have been tested. The results indicate that all three SCT electronics candidates satisfy ATLAS efficiency and noise occupancy requirements. In addition, a study on the effect of detector bias voltage on efficiency (ballistic deficit) is reported.
A comparison of the performance of irradiated p-in-n and n-in-n silicon microstrip detectors read out with fast binary electronics
2000
Abstract Both n-strip on n-bulk and p-strip on n-bulk silicon microstrip detectors have been irradiated at the CERN PS to a fluence of 3×10 14 p cm −2 and their post-irradiation performance compared using fast binary readout electronics. Results are presented for test beam measurements of the efficiency and resolution as a function of bias voltage made at the CERN SPS, and for noise measurements giving detector strip quality. The detectors come from four different manufacturers and were made as prototypes for the SemiConductor Tracker of the ATLAS experiment at the CERN LHC.
Performance of the ATLAS silicon strip detector modules
1998
Abstract The performance of the silicon strip detector prototypes developed for use in ATLAS at the LHC is reported. Baseline detector assemblies (“modules”) of 12 cm length were read out with binary electronics at 40 MHz clock speed. For both irradiated and unirradiated modules, the tracking efficiency, noise occupancy, and position resolution were measured as a function of bias voltage, binary hit threshold, and detector rotation angle in a 1.56 T magnetic field. Measurements were also performed at a particle flux comparable to the one expected at the LHC.
Beam test of the ATLAS silicon detector modules
1998
Abstract Results are reported from a beam test of prototype silicon microstrip detectors and front-end electronics developed for use in the LHC detector ATLAS. The detector assemblies (“modules”) were 12 cm long and were read out with binary electronics. Both irradiated and unirradiated modules were measured in a 1.56 T magnetic field for efficiency, noise occupancy, and position resolution as a function of bias voltage, binary hit threshold, and detector rotation angle with respect to the beam direction.
Charge collection efficiency and resolution of an irradiated double-sided silicon microstrip detector operated at cryogenic temperatures
1999
Abstract This paper presents results on the measurement of the cluster shapes, resolution and charge collection efficiency of a double-sided silicon microstrip detector after irradiation with 24 GeV protons to a fluence of 3.5×10 14 p/cm 2 and operated at cryogenic temperatures. An empirical model is presented which describes the expected cluster shapes as a function of depletion depth, and is shown to agree with the data. It is observed that the clusters on the p-side broaden if the detector is under-depleted, leading to a degradation of resolution and efficiency. The model is used to make predictions for detector types envisaged for the LHC experiments. The results also show that at cryo…
A low-noise and fast pre-amplifier and readout system for SiPMs
2015
Abstract To operate silicon photomultipliers (SiPMs) in a demanding environment with large temperature gradients, different amplifier concepts were characterized by analyzing SiPM pulse-shapes and charge distributions. A fully differential 4-wire SiPM pre-amplifier with separated tracks for the bias voltage and with good common-mode noise suppression was developed and successfully tested. To achieve highest single-pixel resolutions an online after-pulse and pile-up suppression was realized with fast readout electronics based on digital filters.
Timing results using an FPGA-based TDC with large arrays of 144 SiPMs
2015
Silicon photomultipliers (SiPMs) have become an alternative to traditional tubes due to several features. However, their implementation to form large arrays is still a challenge especially due to their relatively high intrinsic noise, depending on the chosen readout. In this contribution, two modules composed of SiPMs with an area of roughly mm mm are used in coincidence. Coincidence resolving time (CRT) results with a field-programmable gate array, in combination with a time to digital converter, are shown as a function of both the sensor bias voltage and the digitizer threshold. The dependence of the CRT on the sensor matrix temperature, the amount of SiPM active area and the crystal type…
Performance of the cost-effective Planacon ® MCP-PMTs in strong magnetic fields
2020
Abstract We present the behavior of the cost-effective Planacon MCP-PMTs with 25 μ m pore diameter in the presence of axial magnetic fields up to 0.5 T. Having a batch of 62 devices of the same type, two MCP-PMTs were selected and their gain variation measured in different magnetic fields. These two otherwise identical devices satisfied the selection criteria by requiring the lowest (1.15 kV) and one of the highest (1.4 kV) bias voltage values to achieve a given gain. Both MCP-PMTs have a nearly identical tolerance of the strong magnetic field despite the significant difference in the bias voltage. This clarifies the mechanism of the B-field influence on the MCP-PMT gain, emphasizing the im…
Polarization phenomena in Al/p-CdTe/Pt X-ray detectors
2013
Over the last decades, CdTe detectors are widely used for the development of room temperature X-ray and gamma ray spectrometers. Typically, high resolution CdTe detectors are fabricated with blocking contacts (indium, aluminum) ensuring low leakage currents and high electric field for optimum charge collection. As well known, time instability under bias voltage (termed as polarization) is the major drawback of CdTe diode detectors. Polarization phenomena cause a progressive degradation of the spectroscopic performance with time, due to hole trapping and detrapping from deep acceptors levels. In this work, we studied the polarization phenomenon on new Al/p-CdTe/Pt detectors, manufactured by …