Search results for "CIRCUIT"
showing 10 items of 936 documents
Fabrication and Characterization of Double- and Single-Clamped CuO Nanowire Based Nanoelectromechanical Switches
2021
Electrostatically actuated nanoelectromechanical (NEM) switches hold promise for operation with sharply defined ON/OFF states, high ON/OFF current ratio, low OFF state power consumption, and a compact design. The present challenge for the development of nanoelectromechanical system (NEMS) technology is fabrication of single nanowire based NEM switches. In this work, we demonstrate the first application of CuO nanowires as NEM switch active elements. We develop bottom-up and top-down approaches for NEM switch fabrication, such as CuO nanowire synthesis, lithography, etching, dielectrophoretic alignment of nanowires on electrodes, and nanomanipulations for building devices that are suitable f…
Self-assembled three-dimensional inverted photonic crystals on a photonic chip
2017
Three dimensional photonic crystals (PhCs) exhibiting a full photonic band gap have high potential in optical signal processing and detector applications. However, the challenges in the integration of the 3D PhCs into photonic circuits have so far hindered their exploitation in real devices. This article demonstrates the fabrication of 3D PhCs exploiting the capillary directed self-assembly (CDSA) of monodisperse colloidal silica spheres, their inversion to silicon shells, and integration with silicon waveguides. The measured transmission characteristics agree with numerical predictions and provide strong indication of a full photonic band gap in the inverted 3D photonic crystals at wavelen…
Corrosion resistance of passive films on different stainless steel grades in food and beverage industry
2020
Abstract Passive films were grown on 304 L, 316 L and Duplex stainless steels by immersion at open circuit potential in solutions mimicking food and beverage industry environments. In acidic food stainless steel surfaces are covered by Cr rich passive films, and generalized dissolution occurs on their surface with consequent ions release into the electrolyte. In fatty food the concentration of released ions is significantly lower since generalized corrosion does not occur, but the loss on MnS inclusions strongly reduces the polarization resistance in this environment especially for 304 L due to its higher localized corrosion susceptibility with respect to the other grades.
Fullerene imposed high open-circuit voltage in efficient perovskite based solar cells
2016
Five different commercially available fullerenes are evaluated as hole blocking/electron transporting materials in p–i–n methylammonium lead iodide perovskite solar cells using a vacuum deposited perovskite absorber layer. A significant enhancement of the solar cell performance can be obtained by selecting a suitable fullerene derivative. Open-circuit voltages as high as 1.11 volts are obtained leading to a power conversion efficiency of 14.6%.
Meniscus coated high open-circuit voltage bi-layer solar cells
2012
Neat bi-layer solar cells of a fullerene acceptor and a cyanine dye donor were prepared using meniscus coating. Meniscus coating is very material efficient and leads to high quality pinhole-free films. The cells exhibit high open circuit voltages of 1 volt, only 0.8 eV below the band gap of the cyanine dye. This is one of the smallest differences reported for organic solar cells and illustrates an almost optimal donor-acceptor energy level alignment.
Influence of the intermediate density-of-states occupancy on open-circuit voltage of bulk heterojunction solar cells with different fullerene accepto…
2010
Electron density of states (DOS) and recombination kinetics of bulk heterojunction solar cells consisting of a poly(3-hexylthiophene) (P3HT) donor and two fullerene acceptors, either [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) or 4,4′-dihexyloxydiphenylmethano[60]fullerene (DPM6), have been determined by means of impedance spectroscopy. The observed difference of 125 mV in the output open-circuit voltage is attributed to significant differences of the occupancy of the DOS in both fullerenes. Whereas DPM6 exhibits a full occupation of the electronic band, occupancy is restricted to the tail of the DOS in the case of PCBM-based devices, implying a higher rise of the Fermi level in the D…
Voltage-controlled current loops with nanofluidic diodes electrically coupled to solid state capacitors
2016
[EN] We describe experimentally and theoretically voltage-controlled current loops obtained with nanofluidic diodes immersed in aqueous salt solutions. The coupling of these soft matter diodes with conventional electronic elements such as capacitors permits simple equivalent circuits which show electrical properties reminiscent of a resistor with memory. Different conductance levels can be reproducibly achieved under a wide range of experimental conditions (input voltage amplitudes and frequencies, load capacitances, electrolyte concentrations, and single pore and multipore membranes) by electrically coupling two types of passive components: the nanopores (ionics) and the capacitors (electr…
Series and parallel resonant inverters for induction heating under short-circuit conditions considering parasitic components
1999
Series and parallel resonant inverters are the common structures in high power industrial generators for induction heating applications. In practical working conditions, short-circuit of the heating coil is very common, normally producing overvoltages that can damage the power transistors of the inverter if no special precautions are taken. The aim of the paper is to show the mechanism of how overvoltages are generated under short-circuit conditions of the heating coil for series and parallel inverters.
Monolithic integration of Giant Magnetoresistance (GMR) devices onto standard processed CMOS dies
2014
Giant Magnetoresistance (GMR) based technology is nowadays the preferred option for low magnetic fields sensing in disciplines such as biotechnology or microelectronics. Their compatibility with standard CMOS processes is currently investigated as a key point for the development of novel applications, requiring compact electronic readout. In this paper, such compatibility has been experimentally studied with two particular non-dedicated CMOS standards: 0.35 μm from AMS (Austria MicroSystems) and 2.5 μm from CNM (Centre Nacional de Microelectrònica, Barcelona) as representative examples. GMR test devices have been designed and fabricated onto processed chips from both technologies. In order …
Advanced time-stamped total data acquisition control front-end for MeV ion beam microscopy and proton beam writing
2013
Many ion-matter interactions exhibit [email protected] time dependences such as, fluorophore emission quenching and ion beam induced charge (IBIC). Conventional event-mode MeV ion microbeam data acquisition systems discard the time information. Here we describe a fast time-stamping data acquisition front-end based on the concurrent processing capabilities of a Field Programmable Gate Array (FPGA). The system is intended for MeV ion microscopy and MeV ion beam lithography. The speed of the system (>240,000 events s^-^1 for four analogue to digital converters (ADC)) is limited by the ADC throughput and data handling speed of the host computer.