Search results for "CONDUCTIVITY"
showing 10 items of 1988 documents
Dielectric Dispersion and Ion Conductivity in High-Pressure LixNaw1-xNbO3Solid Solutions
2009
Thermal behaviour and dispersion of dielectric permeability and thermal behaviour of conductivity measured in ferroelectric ceramic solid solutions of Li x Na 1−x NbO 3 (x = 0.17, 0.25) synthesized at high pressure and possessing extended region of homogeneity are reported. The Li x Na 1−x NbO 3 (x = 0.17, 0.25) solid solutions of perovskite structure are found to be super-ionic conductors at rather low temperatures O ≥ 400 K. Dielectric dispersion and anomalous behaviour of dielectric permeability are observed in the thermal range of super-ionic conductivity corresponding to structural transformations in the high-pressure solid solutions.
Conductivities and silver electrode polarization resistance of solid electrolyte ceramics from ZrO 2 -Y 2 O 3 powder synthesized in air plasma
1998
Ceramic specimens have been obtained from the powder of ZrO2-7.5 mol% Y2O3 having a specific surface area of 30 m2/g synthesized in air plasma. The novelty of this research lies in the fact that the plasma process makes it possible to prepare so-called nanopowders with a particle size less than 100 nm, possessing specific physical, chemical and technological properties. The sintered density of the specimens was 94–96% of the theoretical value, 6.001 g/cm3. The X-ray diffraction pattern of the specimens corresponded to a face-centered cubic lattice. Impedance in the frequency range of 100 Hz–15 MHz and d.c. polarization curves in a potential range of −10 to 10 mV were measured in the tempera…
Orthorhombic boron oxide under pressure: in situ study by X-ray diffraction and Raman scattering
2016
High-pressure phase of boron oxide, orthorhombic \b{eta}-B2O3, has been studied in situ by synchrotron X-ray diffraction to 22 GPa and Raman scattering to 46 GPa at room temperature. The bulk modulus of \b{eta}-B2O3 has been found to be 169(3) GPa that is in good agreement with our ab initio calculations. Raman and IR spectra of \b{eta}-B2O3 have been measured at ambient pressure, all experimentally observed bands have been attributed to the theoretically calculated ones, and the mode assignment has been performed. Based on the data on Raman shift as a function of pressure, combined with equation-of-state data, the Gr\"uneisen parameters of all experimentally observed Raman bands have been …
Conductimetry and impedance spectroscopy study of low pressure metal organic chemical vapor deposition TiN O films as a function of the growth temper…
2001
Abstract Titanium oxinitride thin films have been grown by low pressure metal organic chemical vapor deposition (LP-MOCVD) using titanium isopropoxide, Ti(OCH(CH 3 ) 2 ) 4 (TIP) and NH 3 precursors in a growth temperature range from 450 to 750°C on sapphire substrates. The electrical behaviour of these films was studied between 400 and 173 K, revealing three different behaviours, ranking from a hopping conductivity (450–500°C) to a conducting one (700–750°C), with a dual behaviour for the intermediate growth temperatures. Moreover, at room temperature, both conductimetry and impedance spectroscopy highlighted a percolation behaviour, interpreted in terms of continuum percolation. The effect…
(La0.8Sr0.2)(Mn1−yFey)O3±δ oxides for ITSOFC cathode materials?
2005
The oxygen transport properties in (La 0.8 Sr 0.2 )(Mn 1-y Fe y )O 3±δ (LSMF) with various iron contents y = 0, 0.2, 0.5, 0.8 and 1 were determined by the IEDP technique. Both oxygen diffusion and surface exchange coefficients were found to be greater for y = 0.8 and 1 than those of LSM (y=0). Moreover, for y ≤0.5, grain boundary diffusion was the rate limiting step especially at lower temperatures. Thus, in the LSMF perovskite materials, the oxygen diffusion via oxygen vacancies is enhanced by Fe. The LSMF electrical performances were measured by impedance spectroscopy. Compared to LSM and LSF (y= 1), porous LSMF cathodes with y= 0.2-0.8 exhibit poor electronic conductivity: Fe, by reducin…
Ion transport in the fragile glass former3KNO3-2Ca(NO3)2
1996
The molten salt ${3\mathrm{K}\mathrm{N}\mathrm{O}}_{3}$-2Ca(${\mathrm{NO}}_{3}$${)}_{2}$ has been studied in the frequency range 5 mHz40 GHz and for temperatures 10 KT500 K using impedance spectroscopy. It is found that in the microwave regime the dynamic conductivity traces the primary response. In the radio- and audio-frequency ranges the mobile ion relaxation becomes increasingly decoupled and the time scale and stretching of the response as determined from electrical modulus spectra differ from those obtained by spectroscopies probing the structural response. For T\ensuremath{\gtrsim}360 K minima are detected in the dielectric loss that make possible a comparison with recent mode-coupli…
Electrical Transport in Lead-Free [(1−x)(Na0.5Bi0.5)-xBa]Zr1 - yTiyO3Ceramics (x = 0, 0.06, and y = 0, 0.96)
2009
Lead-free ceramics based on (Na 0.5 Bi 0.5 TiO 3 , NBT)-(Ba(Ti,Zr)O 3 , BTZ) were prepared by solid phase hot pressing sintering process and their ac (σ ac ) and dc (σ dc ) conductivity have been studied (303–753 K). Low frequency (100 Hz–100 kHz) ac conductivity obeys power law σ ac ∼ ω s characteristic for disordered materials. The frequency exponent s is a decreasing function of temperature and tends to zero at high temperatures. Dc conductivity has thermally activated character and possesses four linear parts with four different activation energies and some discontinous changes. However, σ ac (T) possesses two linear parts with two different activation energies and more discontinuous ch…
Structural, electrical and optical properties of zinc‐iridium oxide thin films deposited by DC reactive magnetron sputtering
2014
ZnO-IrO2 thin films were deposited on glass by DC reactive magnetron sputtering at room tem-perature. Structural, electrical and optical properties were investigated as a function of iridium atomic concentra-tion in the films. XRD data shows that ZnO-IrO2 thin films are X-ray amorphous and Raman spectrum resembles the spectrum of IrO2, without any distinct features of wurtzite ZnO structure. The lowest film resistivity and the highest transmittance achieved in the present study were 1.4 × 10-3 Ωcm and 33% at 550 nm, respectively. However, resistivity and transmittance are inversely related to the iridium concentration in the films.
Antiferromagnetism and p‐type conductivity of nonstoichiometric nickel oxide thin films
2020
Plasma‐enhanced atomic layer deposition was used to grow non‐stoichiometric nickel oxide thin films with low impurity content, high crystalline quality, and p‐type conductivity. Despite the non‐stoichiometry, the films retained the antiferromagnetic property of NiO.
Disorder-induced Raman scattering in rhenium trioxide (ReO3)
2007
Raman scattering in cubic metallic perovskite (ReO3) was studied at room temperature for well-crystallized monolith, polycrystalline powder and thin film samples. Defect-induced first-order Raman scattering was detected from the sub-surface region, given by the penetration depth of a 633 nm laser, and its origin was explained on the basis of a rigid-ion vibrational model for bulk ReO3. A quenching of the Raman intensity was observed in crystalline monolithic ReO3 upon increasing the temperature up to 250 °C and was related to crystal surface reconstruction/annealing.