Search results for "CONTACTS"

showing 10 items of 51 documents

Znaczenie rodziny w życiu skazanych poszkodowanych - opinie, oceny i potrzeby

2020

The questions addressed in the present paper concern the family relations of persons deprived of freedom who – remaining in the prison environment – have been degraded, that is convicts occupying the lowest rung in the informal penitentiary system, so-called victimized prisoners. They make a specific community, rejected and humiliated by other inmates. The necessity to ensure safety to them and help them protect their personal characteristics generates difficulties in activities of rehabilitative character. The aim of the research was to show the family relations of people degraded in the prison environment – a subject that has not been studied to date. The method of diagnostic survey was u…

familypenitentiaryvictimized prisonerscontacts with the loved onescorrections officersdegradationAnnales Universitatis Paedagogicae Cracoviensis, Studia Politologica
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Review: Electrostatically actuated nanobeam-based nanoelectromechanical switches – materials solutions and operational conditions

2018

This review summarizes relevant research in the field of electrostatically actuated nanobeam-based nanoelectromechanical (NEM) switches. The main switch architectures and structural elements are briefly described and compared. Investigation methods that allow for exploring coupled electromechanical interactions as well as studies of mechanically or electrically induced effects are covered. An examination of the complex nanocontact behaviour during various stages of the switching cycle is provided. The choice of the switching element and the electrode is addressed from the materials perspective, detailing the benefits and drawbacks for each. An overview of experimentally demonstrated NEM swi…

nanoelectromechanical switchesComputer scienceGeneral Physics and Astronomy02 engineering and technologyReviewlcsh:Chemical technologylcsh:Technology01 natural sciencesReliability (semiconductor)0103 physical sciencesElectronic engineeringNanotechnologylcsh:TP1-1185General Materials ScienceElectrical and Electronic Engineeringlcsh:Science010302 applied physicsreliabilitylcsh:TOperating environmentnanocontactsNEM021001 nanoscience & nanotechnologylcsh:QC1-999NanoscienceInvestigation methodsSwitching cyclenanowireslcsh:Q0210 nano-technologylcsh:PhysicsBeilstein Journal of Nanotechnology
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Vers le développement d'un capteur photoplétysmographique sans contact

2019

Heart-rate estimation performed with remote photoplethysmography is a very active research field. Since pioneer works in 2010, which demonstrated the feasibility of the measure with low-grade consumers’ camera (webcam), the number of scientific publications have increased significantly in the domain. Hence, we observe a multiplication of the methods in order to retrieve the photoplethysmographic signal which has led to an increased precision and quality of the heart-rate estimation. Region of interest segmentation is a key step of the processing pipeline in order to maximize the quality of the measured signal. We propose a new method to perform remote photoplethysmographic measurement using…

[SDV.IB] Life Sciences [q-bio]/BioengineeringSans contacts[INFO.INFO-TI] Computer Science [cs]/Image Processing [eess.IV]Embarqué[INFO.INFO-TI]Computer Science [cs]/Image Processing [eess.IV]Vital signs[SDV.IB]Life Sciences [q-bio]/BioengineeringContactlessEmbeded[SPI.SIGNAL]Engineering Sciences [physics]/Signal and Image processingSignes vitaux[SPI.SIGNAL] Engineering Sciences [physics]/Signal and Image processing
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Ohmic contacts on n-type and p-type cubic silicon carbide (3C-SiC) grown on silicon

2019

This paper is a report on Ohmic contacts on n-type and p-type type cubic silicon carbide (3C-SiC) layers grown on silicon substrates. In particular, the morphological, electrical and structural properties of annealed Ni and Ti/Al/Ni contacts has been studied employing several characterization techniques. Ni films annealed at 950 degrees C form Ohmic contacts on moderately n-type doped 3C-SiC (N-D similar to 1 x 10(17) cm(-3)), with a specific contact resistance of 3.7 x 10(-3) Omega cm(2). The main phase formed upon annealing in this contact was nickel silicide (Ni2Si), with randomly dispersed carbon in the reacted layer. In the case of a p-type 3C-SiC with a high doping level (N-A similar …

Materials scienceSiliconAnnealing (metallurgy)Analytical chemistryFOS: Physical scienceschemistry.chemical_elementApplied Physics (physics.app-ph)02 engineering and technologyThermionic field emission01 natural sciencesNickel silicideTi/Al/Ni0103 physical sciencesGeneral Materials ScienceOhmic contact3C-SiCOhmic contacts010302 applied physicsMechanical EngineeringCubic silicon carbideDopingContact resistancePhysics - Applied Physics021001 nanoscience & nanotechnologyCondensed Matter PhysicsNi2SichemistryMechanics of Materials0210 nano-technologyMaterials Science in Semiconductor Processing
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Capacitance study of thin film SnO2:F/p-type a-Si:H heterojunctions

2011

Abstract We characterized SnO 2 :F/p-type a-Si:H heterojunctions by current-voltage (I-V) and capacitance-voltage (C-V) measurements at room temperature to determine the junction parameters. Samples with circular geometry and different diameters were characterized. The current scales with the junction area, and the current density J as a function of the voltage V is a slightly asymmetric curve with a super-linear behaviour (cubic law) for high voltages. Using a transmission line model valid for devices with circular geometry, we studied the effects of the SnO 2 :F resistivity on the measured capacitance when the SnO2:F layer works as an electrical contact. The measured C-V curve allows us t…

Materials scienceCondensed matter physicsheterojunctionDopingcapacitanceAnalytical chemistryHeterojunctionamorphous siliconCapacitanceElectrical contactsSettore FIS/03 - Fisica Della MateriaEnergy(all)TCOElectrical resistivity and conductivityThin filmCurrent densityVoltageSnO2:F
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Characterization process to measure the electrical contact resistance of Gas Diffusion Layers under mechanical static compressive loads

2016

AEM2016. International conference on Advanced Energy Materials, University of Surrey, Guildford, ROYAUME-UNI, 12-/09/2016 - 14/09/2016; Recent research has identified the mechanical properties of the fuel cell internal components (in particular, the Gas Diffusion Layers - GDLs) as key-parameters to obtain high final performances of the generator. The mechanical compression modulus of these components, the stability of their mechanical properties with respect to temperature and humidity, and their ability to interact with water have an impact on the electrical contact resistances in the stack and, by consequence, on the overall performance of the electric generator. Reducing the losses by co…

Materials scienceEnergy Engineering and Power TechnologyModulusElectric generatorProton exchange membrane fuel cell02 engineering and technologyPROPRIETE MECANIQUE7. Clean energylaw.inventionGenerator (circuit theory)GAS DIFFUSION LAYERCOMPRESSIVE LOADSStack (abstract data type)lawCAPTEUR ELECTRIQUE[SPI.MECA.MEMA]Engineering Sciences [physics]/Mechanics [physics.med-ph]/Mechanics of materials [physics.class-ph]0502 economics and businessGaseous diffusion050207 economicsComposite materialELECTRICAL CONTACT RESISTANCESPROTON EXCHANGE MEMBRANE FUEL CELLRenewable Energy Sustainability and the Environment05 social sciencesContact resistance[SPI.NRJ]Engineering Sciences [physics]/Electric power021001 nanoscience & nanotechnologyCondensed Matter PhysicsElectrical contactsFuel TechnologyGAZCONSOMMATION DE CARBURANT0210 nano-technologyMECHANICAL PROPERTIES[SPI.NRJ] Engineering Sciences [physics]/Electric power
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5-Methylbenzo[d][2,1,3]selenadiazole

2017

In the crystal of the title compound, C7H6N2Se, the molecules are arranged in rods along theb-axis direction and form dimeric units due to intermolecular Se...N contacts of 2.982 (2) Å. The molecules are further linked by weak π–π stacking interactions between the 2,1,3-selenadiazole and six-membered aromatic rings [centroid–centroid distance = 3.8509 (11) Å and ring slippage = 1.539 (3) Å].

crystal structure010405 organic chemistryStereochemistrySe...N contactsStackingselenadiazoleAromaticityCrystal structure010402 general chemistryRing (chemistry)01 natural sciences0104 chemical sciencesCrystallographychemistry.chemical_compoundchemistryπ–π interactionslcsh:QD901-999Diazolelcsh:CrystallographyIUCrData
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"We are human beings" : a study on friendship and ethnicity in a finnish elementary school classroom

1999

peer relationsethnic relationskulttuurierotcultural differencesintercultural contactsfriendship and ethnicitysociometryetnisyyskulttuurienvälisyys
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Crystal structure and Hirshfeld surface analysis of (2E)-3-(3-bromo-4-fluorophenyl)-1-(3,4-dimethoxyphenyl)prop-2-en-1-one

2018

The title compound is constructed from two aromatic rings (3-bromo-4-fluoro­phenyl and 3,4-di­meth­oxy­phen­yl), which are linked by a C=C—C(=O)—C enone bridge and form a dihedral angle of 17.91 (17)°. In the crystal, mol­ecules are linked by C—H⋯O hydrogen bonds enclosing rings of (14) graph-set motif to form layers parallel to (10).

hydrogen contactsdi­meth­oxy­phenyl ringcrystal structureHydrogenchemistry.chemical_elementCrystal structureDihedral angle010402 general chemistry010403 inorganic & nuclear chemistry01 natural sciencesResearch CommunicationsCrystalsymbols.namesakechemistry.chemical_compound3-bromo-4-fluorophenyl ringGeneral Materials Sciencedimethoxyphenyl ring3-bromo-4-fluoro­phenyl ringCrystallographyHydrogen bondHirshfeld surfaceAromaticityGeneral ChemistryCondensed Matter::Mesoscopic Systems and Quantum Hall EffectCondensed Matter Physics0104 chemical sciencesCrystallographychemistryQD901-999symbolsvan der Waals forceEnoneActa Crystallographica Section E Crystallographic Communications
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Prawo skazanego do utrzymywania więzi z rodziną z rodziną i osobami bliskimi. Między normą a rzeczywistością

2019

kara pozbawienia wolnościprawa kazanychconvicts' rightskontakty z rodziną i osobami bliskimicontacts with family and relativescustodial penalty
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