Search results for "CORRELATED"
showing 10 items of 1174 documents
Theory of domain-wall magnetoresistance in metallic antiferromagnets
2020
We develop a theory to compute the domain-wall magnetoresistance (DWMR) in antiferromagnetic (AFM) metals with different spin structures. In the diffusive transport regime, the DWMR can be either {\it negative} or positive depending on the domain-wall orientation and spin structure. In contrast, when the transport is in the ballistic regime, the DWMR is always positive, and the magnitude depends on the width and orientation of the domain wall. Our results pave the way of using electrical measurements for probing the internal spin structure in antiferromagnetic metals.
Magnetoresistance effects in the metallic antiferromagnet Mn$_2$Au
2019
In antiferromagnetic spintronics, it is essential to separate the resistance modifications of purely magnetic origin from other effects generated by current pulses intended to switch the N\'eel vector. We investigate the magnetoresistance effects resulting from magnetic field induced reorientations of the staggered magnetization of epitaxial antiferromagnetic Mn2Au(001) thin films. The samples were exposed to 60 T magnetic field pulses along different crystallographic in-plane directions of Mn2Au(001), while their resistance was measured. For the staggered magnetization aligned via a spin-flop transition parallel to the easy [110]-direction, an ansiotropic magnetoresistance of -0.15 % was m…
Large negative magnetoresistance effects in Co2Cr0.6Fe0.4Al
2003
Abstract Materials, which display large changes in resistivity in response to an applied magnetic field (magnetoresistance) are currently of great interest due to their potential for applications in magnetic sensors, magnetic random access memories, and spintronics. Guided by striking features in the electronic structure of several magnetic compounds, we prepared the Heusler compound Co2Cr0.6Fe0.4Al. Based on our band structure calculations, we have chosen this composition in order to obtain a half-metallic ferromagnet with a van Hove singularity in the vicinity of the Fermi energy in the majority spin channel and a gap in the minority spin channel. We find a magnetoresistive effect of 30% …
A magnetic skyrmion as a non-linear resistive element - a potential building block for reservoir computing
2017
Inspired by the human brain, there is a strong effort to find alternative models of information processing capable of imitating the high energy efficiency of neuromorphic information processing. One possible realization of cognitive computing are reservoir computing networks. These networks are built out of non-linear resistive elements which are recursively connected. We propose that a skyrmion network embedded in frustrated magnetic films may provide a suitable physical implementation for reservoir computing applications. The significant key ingredient of such a network is a two-terminal device with non-linear voltage characteristics originating from single-layer magnetoresistive effects,…
Antiferromagnetic Insulatronics: spintronics without magnetic fields
2021
While known for a long time, antiferromagnetically ordered systems have previously been considered, as expressed by Louis Neel in his Nobel Prize Lecture, to be “interesting but useless”. However, since antiferromagnets potentially promises faster operation, enhanced stability with respect to interfering magnetic fields and higher integration due to the absence of dipolar coupling, they could potentially become a game changer for new spintronic devices. The zero net moment makes manipulation using conventional magnetic fields challenging. However recently, these materials have received renewed attention due to possible manipulation based on new approaches such as photons or spin-orbit torqu…
Spin-orbital polarization of Majorana edge states in oxides nanowires
2020
We investigate a paradigmatic case of topological superconductivity in a one-dimensional nanowire with $d-$orbitals and a strong interplay of spin-orbital degrees of freedom due to the competition of orbital Rashba interaction, atomic spin-orbit coupling, and structural distortions. We demonstrate that the resulting electronic structure exhibits an orbital dependent magnetic anisotropy which affects the topological phase diagram and the character of the Majorana bound states (MBSs). The inspection of the electronic component of the MBSs reveals that the spin-orbital polarization generally occurs along the direction of the applied Zeeeman magnetic field, and transverse to the magnetic and or…
Harnessing Orbital-to-Spin Conversion of Interfacial Orbital Currents for Efficient Spin-Orbit Torques.
2020
The system generates two errors of "Bad character(s) in field Abstract" for no reason. Please refer to the manuscript for the full abstract.
Interfacial Dzyaloshinskii-Moriya interaction and chiral magnetic textures in a ferrimagnetic insulator
2019
The interfacial Dzyaloshinskii-Moriya interaction (DMI) in multilayers of heavy metal and ferromagnetic metals enables the stabilization of novel chiral spin structures such as skyrmions. Magnetic insulators, on the other hand can exhibit enhanced dynamics and properties such as lower magnetic damping and therefore it is of interest to combine the properties enabled by interfacial DMI with insulating systems. Here, we demonstrate the presence of interfacial DMI in heterostructures that include insulating magnetic layers. We use a bilayer of perpendicularly magnetized insulating thulium iron garnet (TmIG) and the heavy metal platinum, and find a surprisingly strong interfacial DMI that, comb…
Covalent bonding and the nature of band gaps in some half-Heusler compounds
2005
Half-Heusler compounds \textit{XYZ}, also called semi-Heusler compounds, crystallize in the MgAgAs structure, in the space group $F\bar43m$. We report a systematic examination of band gaps and the nature (covalent or ionic) of bonding in semiconducting 8- and 18- electron half-Heusler compounds through first-principles density functional calculations. We find the most appropriate description of these compounds from the viewpoint of electronic structures is one of a \textit{YZ} zinc blende lattice stuffed by the \textit{X} ion. Simple valence rules are obeyed for bonding in the 8-electron compound. For example, LiMgN can be written Li$^+$ + (MgN)$^-$, and (MgN)$^-$, which is isoelectronic wi…
Epitaxial Mn2Au thin films for antiferromagnetic spintronics
2015
Mn2Au is one of the few candidate materials for antiferromagnetic spintronics requiring ordered metals with a high Neel-temperature and strong spin–orbit coupling. We report the preparation of epitaxial Mn2Au thin films by rf-sputtering. Structural characterization by x-ray and electron diffraction demonstrates a high degree of atomic order and the temperature dependence of the resistivity is typical for a good metal. The magnetic properties of the samples are studied by the investigation of Mn2Au/Fe bilayers. Exchange bias effects are observed, which present strong evidence for antiferromagnetic order in the Mn2Au thin films. Small domains of 500 nm are visualized in the exchange coupled F…