Search results for "Capacitance"
showing 10 items of 112 documents
Giant Enhancement in the Supercapacitance of NiFe–Graphene Nanocomposites Induced by a Magnetic Field
2019
The rapid rise in energy demand in the past years has prompted a search for low-cost alternatives for energy storage, supercapacitors being one of the most important devices. It is shown that a dramatic enhancement (≈1100%, from 155 to 1850 F g-1 ) of the specific capacitance of a hybrid stimuli-responsive FeNi3 -graphene electrode material can be achieved when the charge/discharge cycling is performed in the presence of an applied magnetic field of 4000 G. This result is related to an unprecedented magnetic-field-induced metal segregation of the FeNi3 nanoparticles during the cycling, which results in the appearance of small Ni clusters (<5 nm) and, consequently, in an increase in pseudoca…
Influence of an elastic stress on the conductivity of passive films
2001
Abstract The electrochemical impedance was measured over a large range of frequency and under straining condition in sodium chloride solution. The Mott-Schottky analysis, performed at high frequency, appears as very useful method to study the effect of an elastic stress on the capacitance values. The results obtained indicate that the semi-conductive properties of passive films formed on a type 316 L stainless steel (SS) are not markedly modified by an elastic stress when applied after ageing. In contrast, passive films formed in the presence of elastic stress have a higher donor and acceptor concentration than those formed in a stress-free state, suggesting that the passive film conductivi…
Qualitative Models for the Photoresponse and Capacitance of Annealed Titania Nanotubes
2015
Physicochemical characterization of annealed TiO2 nanotubes (TNTs) was conducted by using photocurrent spectroscopy and differential capacitance techniques. It has been shown that the geometry and architecture of nanotubes determine how photogenerated electrons and holes are separated and transferred. Photocurrent generation in TNTs is a consequence of two phenomena; drifting of holes into the electrolyte and diffusion of electrons toward the substrate. These two processes have been shown to be independent of the anodic polarization. The capacitance of TiO2 nanotubes is also affected by their geometry. In anodic potentials, with respect to the flat band potential of the underlying barrier l…
Flashlamp-pumped Ti:Sapphire laser: Influence of the rod figure of merit and Ti3+ concentration
1994
A flashlamp-pumped Ti:Sapphire laser is tested with rods of various Figures of Merit (FOM from 100 to 800) and Ti3+ concentrations (0.1 and 0.15% by weight) and we measured the laser energy dependence as a function of these parameters. Output energies above 2 J are obtained without dye converter, leading to a 1.8% overall efficiency and a 2.2% slope efficiency. The effects of pump pulse duration by variation of the discharge capacitance are also monitored.
Growth and Characterization of Anodic Films on Scandium
2013
The anodic behavior of Sc in a slightly alkaline aqueous solution is studied. Electrochemical and capacitance measurements suggest that passive films can be formed on the scandium surface under a high electric field. The formation of these layers occurs at low faradaic efficiency due to oxygen evolution. Photoelectrochemical experiments suggest the formation of a barrier layer with a thickness high enough to hinder external electron photoemission processes and allow the estimation of the bandgap of the films as a function of their formation voltage. The estimated bandgap values were lower than that reported for Sc2O3, suggesting the formation of hydrated phases and/or of a strongly oxygen d…
Interface of Silicon Nitride Nanolayers with Oxygen Deficiency
2018
Multilayer Si 3 N 4 consisting of Si 3 N 4 nanolayers with the total thickness 60 nm was deposited layer-by-layer in a low-pressure chemical vapor deposition process. Compared with the single-layer Si 3 N 4 , the multilayer Si 3 N 4 had one-third less oxygen concentration at the interfaces. This decreased density of electrically active centers of oxygen traps and improved quality of nanocapacitors with multilayer Si 3 N 4 dielectric.
Unravelling steady-state bulk recombination dynamics in thick efficient vacuum-deposited perovskite solar cells by transient methods
2019
Accurately identifying and understanding the dominant charge carrier recombination mechanism in perovskite solar cells are of crucial importance for further improvements of this already promising photovoltaic technology. Both optical and electrical transient methods have previously been employed to strive for this warranted goal. However, electrical techniques can be strongly influenced by the capacitive response of the device which hides the carrier recombination dynamics that are relevant under steady state conditions. To ascertain the identification of steady state relevant charge carrier dynamics, it is beneficial to evaluate thicker films to minimize the impact of device capacitance. H…
Nanogoniometry with scanning force microscopy: a model study of CdTe thin films.
2007
In this paper scanning force microscopy is combined with simple but powerful data processing to determine quantitatively, on a sub-micrometer scale, the orientation of surface facets present on crystalline materials. A high-quality scanning force topography image is used to determine an angular histogram of the surface normal at each image point. In addition to the known method for the assignment of Miller indices to the facets appearing on the surface, a quantitative analysis is presented that allows the characterization of the relative population and morphological quality of each of these facets. Two different CdTe thin films are used as model systems to probe the capabilities of this met…
Carrier transport mechanism in the SnO(2):F/p-type a-Si:H heterojunction
2011
We characterize SnO(2):F/p-type a-Si:H/Mo structures by current-voltage (I-V) and capacitance-voltage (C-V) measurements at different temperatures to determine the transport mechanism in the SnO2:F/p-type a-Si:H heterojunction. The experimental I-V curves of these structures, almost symmetric around the origin, are ohmic for vertical bar V vertical bar< 0:1 V and have a super-linear behavior (power law) for vertical bar V vertical bar < 0:1 V. The structure can be modeled as two diodes back to back connected so that the main current transport mechanisms are due to the reverse current of the diodes. To explain the measured C-V curves, the capacitance of the heterostructure is modeled as the …
Design and operation of CMOS-compatible electron pumps fabricated with optical lithography
2017
We report CMOS-compatible quantized current sources (electron pumps) fabricated with nanowires (NWs) on 300mm SOI wafers. Unlike other Al, GaAs or Si based metallic or semiconductor pumps, the fabrication does not rely on electron-beam lithography. The structure consists of two gates in series on the nanowire and the only difference with the SOI nanowire process lies in long (40nm) nitride spacers. As a result a single, silicide island gets isolated between the gates and transport is dominated by Coulomb blockade at cryogenic temperatures thanks to the small size and therefore capacitance of this island. Operation and performances comparable to devices fabricated using e-beam lithography is…