Search results for "Chalcogen"

showing 10 items of 189 documents

High-pressure synthesis of boron-rich chalcogenides B12S and B12Se

2022

The authors thank Drs. I. Dovgaliuk and T. Chauveau for assistance with Rietveld analysis; and Drs. V. Bushlya and A. Jamali for help with EDX/SEM measurements. This work was financially supported by the European Union's Horizon 2020 Research and Innovation Program under Flintstone2020 project (grant agreement No 689279).

Materials sciencePhononFOS: Physical scienceschemistry.chemical_element02 engineering and technologyCrystal structure[CHIM.INOR]Chemical Sciences/Inorganic chemistry01 natural sciencessymbols.namesake0103 physical sciences[CHIM.CRIS]Chemical Sciences/CristallographyMaterials ChemistryIsostructural010306 general physicsBoronCondensed Matter - Materials ScienceRietveld refinementMechanical EngineeringCrystal structureMetals and AlloysMaterials Science (cond-mat.mtrl-sci):NATURAL SCIENCES::Physics [Research Subject Categories][CHIM.MATE]Chemical Sciences/Material chemistry540021001 nanoscience & nanotechnologyCrystallographychemistryMechanics of MaterialsElemental analysisBoron-rich chalcogenidesddc:540symbolsRaman spectraHigh-pressure synthesis0210 nano-technologyRaman spectroscopyStoichiometry
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Experimental investigation of Brillouin and Raman scattering in a 2SG sulfide glass microstructured chalcogenide fiber.

2008

International audience; In this work, we investigate the Brillouin and Raman scattering properties of a Ge15Sb20S65 chalcogenide glass microstructured single mode fiber around 1.55 microm. Through a fair comparison between a 2-m long chalcogenide fiber and a 7.9-km long classical single mode silica fiber, we have found a Brillouin and Raman gain coefficients 100 and 180 larger than fused silica, respectively.

Materials scienceSilica fiberLightChalcogenideChalcogenide glass02 engineering and technologySulfidesSpectrum Analysis Raman01 natural sciences010309 opticschemistry.chemical_compound020210 optoelectronics & photonicsOpticsDouble-clad fiberBrillouin scattering0103 physical sciences0202 electrical engineering electronic engineering information engineeringFiber Optic TechnologyScattering RadiationComputer Simulationbusiness.industryMicrostructured optical fiberEquipment Design[CHIM.MATE]Chemical Sciences/Material chemistryModels TheoreticalAtomic and Molecular Physics and OpticsEquipment Failure AnalysischemistryNonlinear Dynamics[ CHIM.MATE ] Chemical Sciences/Material chemistryChalcogensGlassbusinessHard-clad silica optical fiberPhotonic-crystal fiber
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Investigations of As-S-Se thin films for use as inorganic photoresist for digital image-matrix holography

2011

AbstractAs-S-Se chalcogenide thin films are successfully employed in classical and dot-matrix holography as inorganic photoresists for obtaining a relief-phase hologram. However using these films for image-matrix hologram recording has not been studied due to some features of image-matrix technology. For the applied research of the optical properties of As-S-Se films an experimental device of digital image-matrix holographic recording based on 100 mW 405 nm semi-conductor laser and Spatial Light Modulator (SLM) has been created. The device has the following main parameters: 140 × 105 µm frame size; laser intensity during exposure 10 W/cm2. With the help of this device diffraction grating an…

Materials scienceSpatial light modulatorinorganic photoresistamorphous chalcogenide filmbusiness.industryChalcogenidePhysicsQC1-999HolographyGeneral Physics and AstronomyDiffraction efficiencyLaserdigital holographylaw.inventionchemistry.chemical_compoundOpticschemistrylawThin filmbusinessDiffraction gratingDigital holographyOpen Physics
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Thickness-dependent properties of ultrathin bismuth and antimony chalcogenide films formed by physical vapor deposition and their application in ther…

2021

This work was supported by the European Regional Development Fund (ERDF) project No 1.1.1.1/16/A/257. J. A. acknowledges the ERDF project No. 1.1.1.2/1/16/037. Institute of Solid State Physics, University of Latvia, Latvia as the Center of Excellence has received funding from the European Union's Horizon 2020 Framework Programme H2020-WIDESPREAD-01-2016-2017 TeamingPhase2 under grant agreement No. 739508, project CAMART2 . The raw/processed data required to reproduce these findings cannot be shared at this time as the data also form a part of an ongoing study.

Materials scienceThickness-dependent thermoelectric propertiesChalcogenideMaterials Science (miscellaneous)Energy Engineering and Power Technologychemistry.chemical_element02 engineering and technology010402 general chemistry7. Clean energy01 natural sciencesBismuthlaw.inventionchemistry.chemical_compoundUltrathin filmlawSeebeck coefficientBismuth chalcogenide:NATURAL SCIENCES:Physics [Research Subject Categories]Thin filmFused quartzAntimony tellurideRenewable Energy Sustainability and the Environmentbusiness.industryAntimony telluride021001 nanoscience & nanotechnology0104 chemical sciencesFuel TechnologyNuclear Energy and EngineeringchemistryPhysical vapor depositionOptoelectronics0210 nano-technologybusinessMolecular beam epitaxyNarrow band gap layered semiconductor
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<title>Holographic recording in amorphous chalcogenide semiconductor thin films</title>

2000

ABSTRACT The photoinduced changes ofoptical properties and holographic recording in amorphous chalcogenide semiconductor As-S- Se and As2S3 thin films have been studied. The possibilities of the practical applications of these materials as the photoresists for the production of the relief holograms and holographic optical elements are discussed. It is shown that theself-enhancement phenomenon of holographic recording in amorphous chalcogenide semiconductor films by light orthermal treatment can be used to increase the diffraction efficiency ofthe holograms.Keywords: chalcogenide semiconductors, amorphous films, photoresists, photoinduced processes, relaxation processes,self-enhancement of h…

Materials sciencebusiness.industryChalcogenideDopingAmorphous solidchemistry.chemical_compoundOpticsSemiconductorAbsorption edgechemistryPhotodarkeningOptoelectronicsThin filmbusinessRefractive indexSPIE Proceedings
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Holographic recording in amorphous chalcogenide thin films

2003

A review of the recent advances and developments in the practical application of chalcogenide materials is presented, focusing special attention on holography and lithography using amorphous chalcogenide thin films.

Materials sciencebusiness.industryChalcogenideHolographyAmorphous solidlaw.inventionchemistry.chemical_compoundOpticschemistrylawOptoelectronicsGeneral Materials ScienceThin filmbusinessLithographyHolographic recordingCurrent Opinion in Solid State and Materials Science
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<title>Dot-matrix holographic recording in amorphous chalcogenide films</title>

2006

We have developed PC controlled dot-matrix holographic recording system based on the CW diode pumped YAG:Nd SHG laser (wavelength 532 nm, power 30mW,) modulated electronically with TTL signals. Two-beam technique has been used with convergence angle 30o and PC controlled incident beam plane rotation 0-360o. Optical system consists of beam splitter, 40mm focus length forming cylindrical lens and 40mm focusing lens. Characteristic parameters of experimental equipment are following: spot size - 50-200 micrometers, direct laser writing area, limited by x-y positioning system, was 70mm x 70mm, number of writing head rotation positions up to 256 (8 bit), time of each exposure - 1-1000 msec. As th…

Materials sciencebusiness.industryChalcogenideHolographyChalcogenide glassLaserDiffraction efficiencylaw.inventionLens (optics)chemistry.chemical_compoundOpticschemistrylawCylindrical lensbusinessBeam splitterSPIE Proceedings
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Holographic recording in amorphous chalcogenide semiconductor thin films

2003

Abstract A detailed study of the amorphous As–S–Se and As2S3 films as recording media for optical holography and electron beam lithography is presented. The results of R&D on resist based on the amorphous As–S–Se thin films for manufacturing of embossed holographic labels are discussed. The holographic recording of transmission and Bragg gratings was studied.

Materials sciencebusiness.industryChalcogenideHolographyCondensed Matter PhysicsDiffraction efficiencyElectron holographyElectronic Optical and Magnetic Materialslaw.inventionAmorphous solidchemistry.chemical_compoundOpticschemistryResistlawMaterials ChemistryCeramics and CompositesThin filmbusinessElectron-beam lithographyJournal of Non-Crystalline Solids
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Amorphous As–S–Se semiconductor resists for holography and lithography

2002

Abstract The photo- and electron-beam induced changes in solubility of thin films of the amorphous chalcogenide semiconductors As–S–Se and As 2 S 3 have been studied. The possibilities of practical application of these materials as resists for the production of relief holograms and holographic optical elements are discussed. It is shown that the self-enhancement (SE) phenomenon of holographic recording in amorphous chalcogenide semiconductor films by light or thermal treatment can be used to increase the diffraction efficiency (DE) of the holograms.

Materials sciencebusiness.industryChalcogenideHolographyCondensed Matter PhysicsDiffraction efficiencyElectronic Optical and Magnetic MaterialsAmorphous solidlaw.inventionchemistry.chemical_compoundSemiconductorOpticschemistryResistlawMaterials ChemistryCeramics and CompositesOptoelectronicsThin filmbusinessLithographyJournal of Non-Crystalline Solids
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<title>Amorphous chalcogenide semiconductor resists for holography and electron-beam lithography</title>

2001

The photo- and electron beam induced changes in solubility of amorphous chalcogenide semiconductor As-S-Se and As2S3 thin films have been studied. The possibilities of practical application of these materials as resists for the production of relief holograms and holographic optical elements are discussed. It is shown that the self-enhancement phenomenon of holographic recording in amorphous chalcogenide semiconductor films by light or thermal treatment can be used to increase the diffraction efficiency of the holograms.© (2001) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.

Materials sciencebusiness.industryChalcogenideHolographylaw.inventionInterference lithographyAmorphous solidchemistry.chemical_compoundSemiconductorOpticschemistryResistlawX-ray lithographybusinessElectron-beam lithographyOptical Organic and Inorganic Materials
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