Search results for "Computer Science::Other"
showing 10 items of 50 documents
A new approach to the design of a speed-torque-controlled rubber V-belt variator
2005
This paper presents a new model for a torque-speed-sensing rubber V-belt variator. The actuators are of the centrifugal roller kind on the driver side and a helical torque cam plus a compression-torsion spring on the driven side. The equations permit designing the actuator geometry in order to keep the transmissible torque as close as possible to the torque request in the whole operative field. Moreover, a procedure is suggested for the most proper design of an automatic variator of this kind. It permits choosing the required variogram of the transmission, i.e. the matching between the engine and the transmission, and designing the actuators: roller mass, housing shape, contact plate angle…
Chalcogenide thin films for direct resistors fabrication and trimming
2004
Abstract The fabrication of thin film resistors based on Ge–Sb–Te chalcogenide alloys is proposed. By exploiting the phase change properties of the deposited film, a laser beam is used for inducing a transition from high to low resistivity along selected paths. Conductivity changes as high as four orders of magnitude can be routinely achieved. This candidates the technique for maskless fabrication of compact precision resistors for a variety of applications.
Introduction: Periodic Filters and Filter Banks
2014
In this chapter filtering of periodic signals is outlined. Periodic filters and periodic filter banks are defined. Perfect reconstruction filter banks are characterized via their polyphase matrices.
Energy and spatial distribution of traps in SiO2/Al 2O3 nMOSFETs
2006
The energy and spatial profiling of the interface and near-interface traps in n-channel MOSFETs with SiO2/Al2O3 gate dielectrics is investigated by charge-pumping (CP) measurements. By increasing the amplitude as well as lowering the frequency of the gate pulse, an increase of the charge recombined per cycle was observed, and it was explained by the contributions of additional traps located higher in energy and deeper in position at the SiO2/Al2O3 interface. In addition, CP currents, acquired after different constant voltage stress, have been used to investigate the trap generation in this dielectric stack. © 2006 IEEE.
Analysis of the IEEE 802.11e EDCA Under Statistical Traffic
2006
Many models have been proposed to analyze the performance of the IEEE 802.11 distributed coordination function (DCF) and the IEEE 802.11e enhanced distributed coordination function (EDCA) under saturation condition. To analyze DCF under statistical traffic, Foh and Zukerman introduce a model that uses Markovian Framework to compute the throughput and delay performance. In this paper, we analyze the protocol service time of EDCA mechanism and introduce a model to analyze EDCA under statistical traffic using Markovian Framework. Using this model, we analyze the throughput and delay performance of EDCA mechanism under statistical traffic.
Optimizing the magnetic circuit of an actuator
2019
The paper presents a modern method of constructive optimization of a plunger actuator with axial symmetry based on the electromagnetic simulation of several variants of magnetic circuit and excitation currents. On the basis of the force calculation developed by this actuator and the magnetic induction values in the core, we calculated the kinematic actuator parameters. Experimental determinations confirmed the precision and utility of the optimization method by electromagnetic simulation of the actuator.
Lumped parameter approach of nonlinear networks with transistors
1991
In this chapter we study the lumped parameter modelling of a large class of circuits composed of bipolar transistors, junction diodes and passive elements (resistors, capacitors, inductors). All these elements are nonlinear: the semiconductor components are modelled by “large signal” equivalent schemes, the capacitors and inductors have monotone characteristics while the resistors can be included in a multiport which also has a monotone description.
Experimental evidence of high spatial confinement of elastic energy in a phononic cantilever
2021
We report on experimental high spatial confinement of elastic energy in a silicon phononic cantilever for which the quality factor of a higher-order flexural resonance is increased by a factor of 27 (from Q ∼ 80 to Q ∼ 2130) with the use of a three-row phononic crystal (PnC) strip. As shown by numerical simulations performed with the finite element method, the PnC both reduces anchor loss and confines elastic energy inside the cantilever. The PnC and the cantilever are fabricated with standard clean room techniques on a silicon on insulator substrate. Optical measurements of the out-of-plane displacements are performed with a laser scanning interferometer in a frequency range around 2 MHz.
Influence of thickness and interface on the low-temperature enhancement of the spin Seebeck effect in YIG films
2016
The temperature-dependent longitudinal spin Seebeck effect (LSSE) in heavy metal (HM)/Y_{3}Fe_{5}O_{12} (YIG) hybrid structures is investigated as a function of YIG film thickness, magnetic field strength, and different HM detection materials. The LSSE signal shows a large enhancement with reductions in temperature, leading to a pronounced peak at low temperatures. We find that the LSSE peak temperature strongly depends on the film thickness as well as on the magnetic field. Our result can be well explained in the framework of magnon-driven LSSE by taking into account the temperature-dependent effective propagation length of thermally excited magnons in the bulk of the material. We further …
Microcavity Light Emitting Diodes Based on GaN membranes Grown by Molecular Beam Epitaxy on Silicon
2003
Resonant-cavity InGaN/GaN quantum well light emitting diodes have been fabricated. Nitride layers were grown by molecular beam epitaxy on Si (111). We fabricated the structures using a combination of Si substrate etching, GaN etching and dielectric (Ta2O5/SiO2) mirror deposition. The electroluminescence spectra show that the emission within the distributed Bragg reflector stop band is enhanced in the membrane microcavity. The cavity modes are broadened by some cavity length non-uniformity that is introduced when the GaN is back etched to adjust the cavity length. This process does not need any transfer on an intermediate host substrate and is fully compatible with large area semiconductor p…