Search results for "Conductor"

Synthesis and Spectroscopic Properties of Silica−Dye−Semiconductor Nanocrystal Hybrid Particles

2010

We prepared silica-dye-nanocrystal hybrid particles and studied the energy transfer from semiconductor nanocrystals (= donor) to organic dye molecules (= acceptor). Multishell CdSe/CdS/ZnS semiconductor nanocrystals were adsorbed onto monodisperse Stöber silica particles with an outer silica shell of thickness 2-23 nm containing organic dye molecules (Texas Red). The thickness of this dye layer has a strong effect on the energy transfer efficiency, which is explained by the increase in the number of dye molecules homogeneously distributed within the silica shell, in combination with an enhanced surface adsorption of nanocrystals with increasing dye amount. Our conclusions were underlined by…

Optimal pareto solutions of a dynamic C chart: An application of statistical process control on a semiconductor devices manufacturing process

2015

The present paper proposes a novel economic-statistical design procedure of a dynamic c control chart for the Statistical Process Control (SPC) of the manufacturing process of semiconductor devices. Particularly, a non-linear constrained mathematical programming model is formulated and solved by means of the ε-constraint method. A numerical application is developed in order to describe the Pareto frontier, that is the set of optimal c charts and the related practical considerations are given. The obtained results highlight how the performance of the developed dynamic c chart overcome that of the related static one, thus demonstrating the effectiveness of the proposed procedure.

Monte Carlo simulation of high‐order harmonics generation in bulk semiconductors and submicron structures

2004

To qualify the feasibility of standard semiconductor materials and Schottky‐barrier diodes (SBDs) for THz high‐order harmonic generation and extraction, the harmonic intensity, intrinsic noise and signal‐to‐noise ratio are calculated by the Monte Carlo method when a periodic high‐frequency large‐amplitude external signal is applied to a semiconductor device. Due to very high signal‐to‐noise ratio heavily doped GaAs SBDs are found to exhibit conditions for frequency mixing and harmonic extraction that are definitively superior to those of bulk materials. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Passive and transpassive behaviour of Alloy 31 in a heavy brine LiBr solution

2013

The passive and transpassive behaviour of Alloy 31, a highly alloyed austenitic stainless steel (UNS N08031), has been investigated in a LiBr heavy brine solution (400 g/l) at 25 °C using potentiostatic polarisation combined with electrochemical impedance spectroscopy and Mott–Schottky analysis. The passive film formed on Alloy 31 has been found to be p-type and/or n-type in electronic character, depending on the film formation potential. The thickness of the film formed at potentials within the passive region increases linearly with applied potential. The film formed at transpassive potentials is thinner and more conductive than the film formed within the passive region. These observations…

Temperature and doping dependence of normal state spectral properties in a two-orbital model for ferropnictides

2016

Using a second-order perturbative Green's functions approach we determined the normal state single-particle spectral function $A(\vec{k},\omega)$ employing a minimal effective model for iron-based superconductors. The microscopic model, used before to study magnetic fluctuations and superconducting properties, includes the two effective tight-binding bands proposed by S.Raghu et al. [Phys. Rev. B 77, 220503 (R) (2008)], and intra- and inter-orbital local electronic correlations, related to the Fe-3d orbitals. Here, we focus on the study of normal state electronic properties, in particular the temperature and doping dependence of the total density of states, $A(\omega)$, and of $A(\vec{k},\o…

Synthesis and structural analysis of novel proton conductors RE1-xBa1+xGaO4-x/2 (RE = La, Nd)

2009

Band-to-Band and Band-to-Acceptor Photoluminescence Studies in InSe under Pressure

1999

We report on photoluminescence (PL) measurements under pressure on p-type N-doped InSe at 10 K and on n-type Si-doped InSe at room temperature. Low-temperature PL of N-doped InSe is dominated by a band-to-acceptor peak. From the pressure dependence of the ionization energy of the N related shallow acceptor, the pressure change of the hole effective mass is estimated through the Gerlach-Pollmann model for hydrogenic levels in uniaxial crystals and discussed in the framework of a k p model. Room temperature PL in Si-doped InSe is dominated by a band-to-band peak exhibiting a pressure shift in agreement with previous works. This PL peak has been measured up to 7 GPa and a steep reversible decr…

Fundamentals of photoelectrocatalysis

2022

Photoelectrocatalysis combines heterogeneous photocatalysis and electrocatalysis principles for numerous processes including the degradation of harmful compounds, the generation of H2 and O2 from water splitting, the reduction of CO2 or the photoelectrocatalytic synthesis of valuable organic molecules otherwise difficult to be synthetized with classical approaches. The recent progress of photoelectrocatalysis is heavily related to the development of materials, especially in 2D and nano materials. Highly ordered nanomaterials such as graphene, nanotubes, nanowires, etc. are gaining more attention due to their high surface area and excellent conductivity. Other challenges are the development …

SPEEDAM 2010 Poster REC0616: An electrochemical route towards the fabrication of nanostructured semiconductor solar cells

2010

Peculiarities of Phase Formation in Mn-Based Na SuperIonic Conductor (NaSICon) Systems: The Case of Na1+2xMnxTi2–x(PO4)3 (0.0 ≤ x ≤ 1.5)

2021

This project has received funding from the European Regional Development Fund (Project no. 01.2.2-LMT-K-718-02–0005) under grant agreement with the Research Council of Lithuania (LMTLT). We thank the High Performance Computing Center “HPC Saulėtekis” at the Faculty of Physics, Vilnius University, for the use of computational resources.