Search results for "Conductor"
showing 10 items of 1270 documents
Thickness identification of atomically thin InSe nanoflakes on SiO2/Si substrates by optical contrast analysis
2015
Abstract Single layers of chalcogenide semiconductors have demonstrated to exhibit tunable properties that can be exploited for new field-effect transistors and photonic devices. Among these semiconductors, indium selenide (InSe) is attractive for applications due to its direct bandgap in the near infrared, controllable p- and n-type doping and high chemical stability. For its fundamental study and the development of practical applications, rapid and accurate identification methods of atomically thin nanosheets are essential. Here, we employ a transfer matrix approach to numerically calculate the optical contrast between thin InSe flakes and commonly used SiO2/Si substrates, which nicely re…
Efficient wide band gap double cation – double halide perovskite solar cells
2017
In this work we study the band gap variation and properties of the perovskite compound Cs0.15FA0.85Pb(BrxI1−x)3 as a function of the halide composition, with the aim of developing an efficient complementary absorber for MAPbI3 in all-perovskite tandem devices. We have found the perovskite stoichiometry Cs0.15FA0.85Pb(Br0.7I0.3)3 to be a promising candidate, thanks to its band gap of approximately 2 eV. Single junction devices using this perovskite absorber lead to a maximum PCE of 11.5%, among the highest reported for solar cells using perovskites with a band gap wider than 1.8 eV.
Origin of the Chemiresistive Response of Ultrathin Films of Conductive Metal–Organic Frameworks
2018
Conductive metal-organic frameworks are opening new perspectives for the use of these porous materials for applications traditionally limited to more classical inorganic materials, such as their integration into electronic devices. This has enabled the development of chemiresistive sensors capable of transducing the presence of specific guests into an electrical response with good selectivity and sensitivity. By combining experimental data with computational modelling, a possible origin for the underlying mechanism of this phenomenon in ultrathin films (ca. 30 nm) of Cu-CAT-1 is described. ispartof: ANGEWANDTE CHEMIE-INTERNATIONAL EDITION vol:57 issue:46 pages:15086-15090 ispartof: location…
Optical and magnetic properties of ZnCoO thin films synthesized by electrodeposition
2008
Ternary Zn1−xCoxO crystalline films with different compositions were grown by electrodeposition. The Co content in the final compound is linked to the initial Co/Zn ratio in the starting solution. X-ray diffraction reveals a wurtzite structure for the Zn1−xCoxO films. Transmittance spectra show two effects proportional to Co content, a redshift of the absorption edge and three absorption bands, which are both interpreted to be due to the Co incorporated into the ZnO lattice. The amount of deposited charge was used to get a precise control of the film thickness. Magnetic measurements point out that Co(II) ions are isolated from each other, and consequently the films are paramagnetic. Francis…
Spin polarized tunneling at room temperature in a Heusler compound-a non-oxide material with a large negative magnetoresistance effect in low magneti…
2003
Summary form only given. Materials which display large changes in resistivity in response to an applied magnetic field (magnetoresistance) are currently of great interest due to their potential for applications in magnetic sensors, magnetic random access memories, and spintronics-a new kind of electronics based on spin instead of charge. Although ferromagnetic manganites show colossal magnetoresistance (CMR) effects around their Curie temperature, the low field and nearly temperature independent magnetoresistance properties important for spintronics are found only at low temperatures. Guided by striking features in the electronic structure of several magnetic compounds, we prepared the Heus…
Progress in Violet Light-Emitting Diodes Based on ZnO/GaN Heterojunction
2020
Progress in light-emitting diodes (LEDs) based on ZnO/GaN heterojunctions has run into several obstacles during the last twenty years. While both the energy bandgap and lattice parameter of the two semiconductors are favorable to the development of such devices, other features related to the electrical and structural properties of the GaN layer prevent an efficient radiative recombination. This work illustrates some advances made on ZnO/GaN-based LEDs, by using high-thickness GaN layers for the p-region of the device and an ad hoc device topology. Heterojunction LEDs consist of a quasicoalesced non-intentionally doped ZnO nanorod layer deposited by chemical bath deposition onto a metal&ndash
Investigation of Critical Points of Pore Formation Voltage on the Surface of Semiconductors of A3B5 Group
2021
In this work, critical values of pore-formation in electrochemical machining of semiconductors of A 3 B 5 group are studied. On the example of indium phosphide, the indicators of the series of dependence of current density on the voltage of anodization are studied. The rates of current density increase in the regime of gradual rise of anodization voltage are determined. According to these indicators, the intervals are established, within which the active pore-formation occurs on the surface of semiconductor.
Phonon Dispersion of Wurtzite CdSe: The Bond Charge Model
2000
The phonon dispersion of wurtzite CdSe is presented along the main directions of the Brillouin zone. The study has been performed by using a bond charge model for wurtzite-type semiconductors with only six adjustable parameters. The results are compared against neutron scattering data and ab initio calculations. The phonon eigenvectors corresponding to the vibrational modes at the Γ-point are in very good agreement with the ab initio calculations.
Assessment on the use of the amorphous semiconductor theory for the analysis of oxide films
2015
Abstract Although the theory of Schottky barrier in amorphous semiconductors is generally accepted, the limits of validity of such theory have not yet been explored. The classic semi-analytical solution is obtained under the constraint of constant electronic density of states (DOS) distribution in the mobility gap. In order to take into account the presence of a DOS variable in energy, a semi-empirical corrective power law was introduced in this paper. It is shown that the equations derived for thick films maintain their validity also in the case of thin films, provided that the space charge region width remains lower than 70% of the whole film thickness. A new expression based on the use o…
Influence of oxygen ion elementary diffusion jumps on the electron current through the conductive filament in yttria stabilized zirconia nanometer-si…
2021
Abstract The structure of the electron current through an individual filament of a nanometer-sized virtual memristor consisting of a contact of a conductive atomic force microscope probe to an yttria stabilized zirconia (YSZ) thin film deposited on a conductive substrate is investigated. Usually, such investigation is performed by the analysis of the waveform of this current with the aim to extract the random telegraph noise (RTN). Here, we suggest a new indirect method, which is based on the measurement of the spectrum of the low-frequency flicker noise in this current without extracting the RTN, taking into account the geometrical parameters of the filament. We propose that the flicker no…