Search results for "Crystallographic"
showing 10 items of 202 documents
The kinetics of defect aggregation: A novel lattice formalism
1995
We introduce a stochastic model for the A + B → O reaction on a discrete lattice. The system may include mono- and bimolecular steps (i. e. reaction and diffusion steps). The resulting infinite chain of equations is truncated at a certain level via a modified Kirkwood approximation.
Theoretical simulations of I-center annealing in KCl crystals
1995
Abstract This paper focus on theory of diffusion-controlled annealing of the most mobile radiation-induced defects—I centers—in KCl crystals. The kinetics of annealing of pairs of close oppositely charged defects—α-I centers (arising as a result of the tunnelling recombination of primary Frenkel defects—F and H centers) and F-I centers (when H center trap electrons) is calculated taking into account defect diffusion and Coulomb/elastic interaction. Special attention is paid to the conditions under which multi-stage annealing arises; theoretical results are compared with the relevant experimental data.
UV and vacuum-UV properties of ge related centers in gamma irradiated silica
2002
Photochemical inhomogeneity in the reduction process of the optical activity related to Ge oxygen deficient point defects in silica, characterized by an absorption band centered at 5.15 v eV and two emission bands centered at 3.2 v eV and 4.3 v eV, have been investigated. We have made a comparative study of the stationary and time dependent photoluminescence under excitation in the UV (5 v eV) and in the vacuum-UV (7.4 v eV) ranges in natural silica samples with native and with n -irradiation bleached optical activity. Our measurements evidence that the same spectral features are observed in the native and in the irradiated samples, but for an intensity reduction in the irradiated ones. Mor…
Radiation induced defects in SiO 2
2002
The main luminescent centers in SiO 2 films are the red luminescence R (650 v nm; 1.85 v eV) of the non-bridging oxygen hole center (NBOHC) and the twofold-coordinated (divalent) silicon with a blue B (460 v nm; 2.7 v eV) and a UV band (285 v nm; 4.4 v eV). Especially the latter ones are produced under irradiation, but from existing precursors assumed as silicon related oxygen deficient centers (SiODC). Therefore, in order to prove these models we compare a direct oxygen implantation with a direct silicon implantation into SiO 2 layers. The main result is: implanting oxygen increases the red band R but does not affect the blue band B. Silicon surplus increases the amplitude of the blue (B) …
Facility for thermal helium desorption (THDS) measurements
1995
Abstract We describe a thermal helium desorption spectrometer, built at the Department of Physics, University of Jyvaskyla, which will be used in investigations of crystal defects generated by keV range heavy ion bombardment. The helium desorption method and its requirements are reviewed briefly. The structure of the facility itself is presented in detail. The efficiency and the operation of the apparatus is discussed.
Radiation-induced point defects in simple oxides
1998
We present a survey of recent theoretical studies of radiation-induced point defects in simple oxides with emphasis on highly ionic MgO, partly-covalent corundum (Al2O3) and ferroelectric KNbO3. The atomic and electronic structure of the electronic (F a and F centers) and hole centers, as well as interstitial atoms therein are discussed in light of the available experimental data. Results for defect diAusion and photo-stimulated F a fi F center conversion are also ana
Irradiation induced defects in fluorine doped silica
2008
International audience; The role of fluorine doping in the response to UV pulsed laser and c radiation of silica preforms and fibers was studied using electron spin resonance (ESR) spectroscopy. Exposure to radiation mainly generates E0 centers, with the same effectiveness in fibers and in preforms. The E'concentration in F-doped silica fibers is found to increase with UV energy fluence till a saturation value, consistently with a precursor conversion process. These results show the fluorine role in reducing the strained Si–O bonds thus improving the radiation hardness of silica, also after drawing process.
Paramagnetic germanium-related centers induced by energetic radiation in optical fibers and preforms
2009
International audience; We investigated the creation processes of Ge-related paramagnetic point defects in silica fibers and preforms, doped with different amounts of germanium, and X-ray irradiated at several radiation doses. Different paramagnetic defect species, like GeE0, Ge(1) and Ge(2), were revealed by electron paramagnetic resonance measurements and their concentration was studied as a function of the irradiation dose. The comparison with the optical absorption spectra points out the main role of Ge(1) on the optical transmission loss of fibers in the UV region.
Evidence of different red emissions in irradiated germanosilicate materials
2016
International audience; This experimental investigation is focused on a radiation induced red emission in Ge doped silica materials, elaborated with different methods and processes. The differently irradiated samples as well as the pristine ones were analyzed with various spectroscopic techniques, such as confocal microscopy luminescence (CML), time resolved luminescence (TRL), photoluminescence excitation (PLE) and electron paramagnetic resonance (EPR). Our data prove that irradiation induces a red luminescence related to the presence of the Ge atoms. Such emission features a photoexcitation spectrum in the UV-blue spectral range and, TRL measurements show that its decrease differs from a …
Pulsed X‐Ray Radiation Responses of Solarization‐Resistant Optical Fibers
2018
International audience; The transient radiation‐induced attenuation (RIA) of two different versions of pure‐silica‐core (PSC) multimode optical fibers (so‐called “solarization‐resistant” fibers) exposed to nanosecond 1 MeV X‐ray pulses are investigated. On‐line RIA spectra measurements at both room temperature (RT) and liquid nitrogen temperatures (LNT) in the range 1–3.5 eV are performed. Following the RIA kinetics, the properties of the metastable defects that are bleached just after the pulse are discussed. The spectral decomposition of the RIA is performed using known Gaussian bands associated to point defects absorbing in this spectral range. For both fiber types, the generation and th…